IRF6618TR1PBF [INFINEON]
Lead-Free (Qualified up to 260°C Reflow); 无铅（合格高达260A °C回流温度）
| 型号： | IRF6618TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Lead-Free (Qualified up to 260°C Reflow) |
| 文件： | 总9页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97240A
IRF6618PbF
IRF6618TRPbF
l RoHs Compliant
DirectFET Power MOSFET
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max
2.2mΩ@ 10V 3.4mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l High Cdv/dt Immunity
43nC
15nC
4.0nC
46nC
28nC
1.64V
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFETISOMETRIC
MT
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details)
MT
SQ
SX
ST
MQ
MX
Description
The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for
parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
V
VDS
V
Gate-to-Source Voltage
±20
170
30
GS
I
I
I
I
@ TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
D
D
@ TA = 25°C
@ TA = 70°C
A
24
240
210
24
DM
EAS
IAR
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
6
5
4
3
2
1
0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I
= 30A
I = 24A
D
D
V
= 24V
= 15V
DS
V
DS
T
= 125°C
J
T
= 25°C
6
J
2
3
4
5
7
8
9
10
0
10
20
30
40
50
60
V
Gate -to -Source Voltage (V)
Q
Total Gate Charge (nC)
GS,
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
G
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 24A.
1
www.irf.com
08/17/07
IRF6618PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.2
V
∆ΒVDSS/∆TJ
RDS(on)
23
mV/°C Reference to 25°C, ID = 1mA
mΩ
1.7
–––
1.64
-5.7
–––
–––
–––
–––
–––
–––
43
VGS = 10V, ID = 30A
3.4
VGS = 4.5V, ID = 24A
VGS(th)
Gate Threshold Voltage
2.35
–––
5.0
V
VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
mV/°C
VDS = 30V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
1.0
µA
V
V
DS = 24V, VGS = 0V
150
100
-100
–––
65
DS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
V
V
GS = -20V
gfs
S
DS = 15V, ID = 24A
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
12
–––
–––
23
VDS = 15V
VGS = 4.5V
4.0
15
nC
ID = 24A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
12
–––
–––
–––
2.2
See Fig. 14
19
Output Charge
28
nC VDS = 15V, VGS = 0V
Ω
Gate Resistance
Turn-On Delay Time
Rise Time
1.0
21
td(on)
tr
td(off)
tf
–––
–––
–––
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
ID = 24A
71
Turn-Off Delay Time
Fall Time
27
ns
Clamped Inductive Load
See Fig. 15 & 16
VGS = 0V
8.1
5640
1260
570
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF
V
DS = 15V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
–––
–––
89
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
ISM
G
–––
–––
240
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
0.78
43
1.2
65
69
V
T = 25°C, I = 24A, V
= 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
T = 25°C, I = 24A
J F
Qrr
di/dt = 100A/µs
See Fig. 17
46
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF6618PbF
Absolute Maximum Ratings
Max.
2.8
Parameter
Units
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
1.8
W
89
270
-40 to + 150
T
T
Peak Soldering Temperature
Operating Junction and
°C
P
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Ambient
Typ.
–––
12.5
20
Max.
45
Units
RθJA
RθJA
–––
–––
1.4
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
°C/W
RθJC
–––
1.0
RθJ-PCB
–––
Junction-to-PCB Mounted
Linear Derating Factor
0.022
W/°C
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
R1
R1
R2
R2
R3
R4
Ri (°C/W) τi (sec)
R3
R4
0.1
τ
0.6784
17.299
17.566
9.4701
0.00086
0.57756
8.94
τ
JτJ
τ
AτA
τ
1τ1
τ
τ
2τ2
3τ3
4τ4
0.01
0.001
0.0001
Ci= τi/Ri
Ci= τi/Ri
106
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
3
IRF6618PbF
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
100
BOTTOM
BOTTOM
2.7V
2.7V
10
1
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 25°C
Tj = 150°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
1.5
1.0
0.5
I
= 30A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
1
V
= 10V
DS
≤60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
C
C
C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
C
iss
C
C
oss
rss
1
10
100
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Typical Capacitance vs.
Drain-to-SourceVoltage
4
www.irf.com
IRF6618PbF
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
T
= 25°C
C
Tj = 150°C
Single Pulse
V
= 0V
10msec
100
GS
1
0.10
0
1
10
1000
0.2
0.4
SD
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
Fig 9. Typical Source-Drain Diode Forward Voltage
Fig 10. Maximum Safe Operating Area
2.5
180
160
140
120
100
80
2.0
1.5
1.0
0.5
0.0
I
= 250µA
D
60
40
20
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T , Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 12. Threshold Voltage vs. Temperature
Fig 11. Maximum Drain Current vs.
CaseTemperature
900
I
D
800
700
600
500
400
300
200
100
TOP
9.3A
11A
BOTTOM 24A
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy
vs. Drain Current
www.irf.com
5
IRF6618PbF
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
-
I
A
20V
t
0.01Ω
p
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 15a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
tf
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 16b. Switching Time Waveforms
Fig 16a. Switching Time Test Circuit
6
www.irf.com
IRF6618PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
InductorCurrent
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig17. DiodeReverseRecoveryTestCircuitforN-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
www.irf.com
7
IRF6618PbF
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX MIN
CODE
MIN
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.0274
0.0031
0.007
6.35
5.05
3.95
0.45
A
B
C
D
E
F
0.246
0.189
0.152
0.014
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.616
0.020
0.08
0.82 0.031
0.92 0.035
1.82
1.02
0.67
0.070
0.039
0.025
G
H
J
1.01 0.035
2.63 0.097
K
L
0.676
0.080
0.17
M
R
P
0.0235
0.0008
0.003
DirectFET Part Marking
8
www.irf.com
IRF6618PbF
DirectFET Tape & Reel Dimension (Showing component orientation)
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6618TRPBF). For 1000 parts on 7"
reel, order IRF6618TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
A
B
C
D
E
F
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2007
www.irf.com
9
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明