IRF6631TR1 [INFINEON]
Power Field-Effect Transistor, 13A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3;型号: | IRF6631TR1 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 13A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 开关 脉冲 晶体管 |
文件: | 总9页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97183
IRF6631
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS compliant containing no lead or bromide
l Low Profile (<0.6 mm)
VDSS
30V max ±20V max
VGS
RDS(on)
RDS(on)
6.0mΩ@ 10V 8.3mΩ@ 4.5V
l Dual Sided Cooling Compatible
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ultra Low Package Inductance
12nC
4.4nC 1.1nC
10nC
7.3nC
1.8V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET applications
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
13
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
10
A
@ TA = 70°C
@ TC = 25°C
57
100
13
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
10
20
15
10
5
12.0
10.0
8.0
I
= 13A
I = 10A
D
D
V
= 24V
DS
DS
V
= 15V
T
= 125°C
J
6.0
4.0
2.0
T
= 25°C
7
J
0
0.0
3
4
5
6
8
9
10
0
5
10
15
20
25
30
Q Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 10A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
02/09/06
IRF6631
Static @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Min. Typ. Max. Units
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
Reference to 25°C, I = 1mA
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
23
––– mV/°C
D
VGS = 10V, ID = 13A c
6.0
8.3
1.8
-5.2
–––
–––
–––
7.8
m
Ω
c
VGS = 4.5V, ID = 10A
10.8
2.35
VDS = VGS, ID = 25µA
VGS(th)
Gate Threshold Voltage
1.35
–––
–––
–––
–––
–––
32
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VDS = 24V, VGS = 0V
1.0
150
100
µA
nA
S
V
DS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
VDS = 15V, ID = 10A
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
––– -100
gfs
–––
12
–––
18
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.4
1.1
4.4
3.1
5.5
7.3
1.6
15
–––
–––
–––
–––
–––
–––
3.0
VGS = 4.5V
ID = 10A
nC
See Fig. 15
VDS = 16V, VGS = 0V
nC
Gate Resistance
Ω
ꢀc
VDD = 16V, VGS = 4.5V
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
ID = 10A
Rise Time
18
Clamped Inductive Load
See Fig. 16 & 17
Turn-Off Delay Time
18
ns
Fall Time
4.9
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1450 –––
VDS = 15V
Output Capacitance
–––
–––
310
170
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Conditions
Min. Typ. Max. Units
IS
MOSFET symbol
showing the
Continuous Source Current
–––
–––
42
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
–––
–––
100
p-n junction diode.
TJ = 25°C, IS = 10A, VGS = 0V
TJ = 25°C, IF = 10A
ꢀd
(Body Diode)
c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
11
1.2
17
15
V
ns
nC
cꢀ
Qrr
di/dt = 500A/µs
See Fig. 18
10
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6631
Absolute Maximum Ratings
Max.
Parameter
Units
2.2
Power Dissipation
Power Dissipation
Power Dissipation
W
P @TA = 25°C
D
1.4
P @TA = 70°C
D
42
P @TC = 25°C
D
270
Peak Soldering Temperature
Operating Junction and
°C
T
P
-40 to + 150
T
J
Storage Temperature Range
T
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
58
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Rθ
JA
–––
–––
3.0
Rθ
JA
RθJC
–––
1.4
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.017
100
10
D = 0.50
0.20
0.10
0.05
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
0.02
0.01
1
1.6195
0.000126
0.001354
0.375850
7.41
τ
τ
J τJ
τ
AτA
2.14056
22.2887
20.0457
11.9144
1τ1
τ
τ
τ
τ
2τ2
3τ3
4τ4
5τ5
Ci= τi/Ri
0.1
Ci= τi/Ri
99
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
TC measured with thermocouple incontact with top (Drain) of part.
Surface mounted on 1 in. square Cu board, steady state.
ꢀ R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
IRF6631
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
BOTTOM
BOTTOM
60µs PULSE WIDTH
Tj = 25°C
≤
2.5V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
≤
2.5V
1
0.01
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 10V
I
= 13A
DS
D
≤
60µs PULSE WIDTH
V
V
= 10V
GS
GS
= 4.5V
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
50
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
40
30
20
10
0
= C + C
ds
gd
C
iss
C
oss
C
rss
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
www.irf.com
IRF6631
1000
100
10
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100µsec
1msec
10msec
1
T
T
= 25°C
A
J
= 150°C
V
= 0V
GS
Single Pulse
0.1
0
0.0
0.1
1.0
10
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
2.5
60
50
40
30
20
10
0
2.0
I
= 50µA
D
1.5
1.0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
60
50
40
30
20
10
0
I
D
TOP
3.1A
4.5A
BOTTOM 10A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6631
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
VGS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6631
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
www.irf.com
7
IRF6631
DirectFET Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX
CODE
MIN
MIN
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
N/A
MAX
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
N/A
4.85
3.95
A
B
C
D
E
F
0.187
0.146
2.85 0.108
0.45 0.014
0.52
0.82
0.92
0.82
N/A
0.019
0.031
0.035
0.031
N/A
G
H
J
0.97
K
L
0.037
0.93
2.00
0.48
0.03
0.08
0.038
0.083
0.023
0.003
0.007
2.10 0.079
0.59 0.019
M
N
P
0.08
0.17
0.001
0.003
DirectFET Part Marking
8
www.irf.com
IRF6631
DirectFET Tape & Reel Dimension
(Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6631). For 1000 parts on 7" reel,
order IRF6631TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000)
METRIC IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
330.0
20.2
12.8
1.5
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
6.9
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
DIMENSIONS
NOTE: CONTROLLING
DIMENSIONS IN MM
METRIC
MAX
IMPERIAL
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
MIN
7.90
3.90
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
8.10
4.10
11.90
5.45
4.00
5.00
1.50
1.50
12.30
5.55
4.20
5.20
N.C
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/06
www.irf.com
9
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