IRF6633ATRPBF [INFINEON]
DirectFETTM Power MOSFET; DirectFETTM功率MOSFET
| 型号： | IRF6633ATRPBF |
| 厂家： | 
Infineon |
| 描述： | DirectFETTM Power MOSFET |
| 文件： | 总9页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97122A
IRF6633APbF
IRF6633ATRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant
VDSS
VGS
RDS(on)
RDS(on)
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
20V max ±20V max
4.1mΩ@ 10V 7.0mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
11nC
3.9nC 1.7nC
33nC
8.5nC
1.8V
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MU
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MU
Description
The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633APbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633APbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Max.
20
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
16
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
13
A
@ TA = 70°C
@ TC = 25°C
69
130
65
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
13
20
15
10
5
12
10
8
I
= 16A
I = 13A
D
V
= 16V
D
DS
VDS= 10V
6
T
= 125°C
= 25°C
J
4
2
T
J
0
0
2.0
4.0
6.0
8.0
10.0
0
5
10
15
20
25
30
V
, Gate-to-Source Voltage (V)
GS
Fig 1. Typical On-Resistance Vs. Gate Voltage
Q
Total Gate Charge (nC)
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 13A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
3/13/08
IRF6633APbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
14
–––
V
ΔΒVDSS/ΔTJ
RDS(on)
–––
–––
–––
1.4
––– mV/°C
D
V
GS = 10V, ID = 16A i
VGS = 4.5V, ID = 13A i
DS = VGS, ID = 250μA
4.1
7.0
1.8
-5.0
–––
–––
–––
–––
–––
11
5.6
9.4
2.2
mΩ
V
VGS(th)
Gate Threshold Voltage
V
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
31
––– mV/°C
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 20V
1.0
150
100
-100
–––
17
μA
nA
S
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 10V, ID = 13A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
2.0
1.7
3.9
3.4
5.6
8.5
1.5
6.9
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGS = 4.5V
nC
ID = 13A
See Fig. 15
VDS = 10V, VGS = 0V
nC
Gate Resistance
Ω
VDD = 16V, VGS = 4.5Vꢁi
ID = 13A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
RG= 1.8 Ω
Turn-Off Delay Time
8.4
7.7
ns
Fall Time
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1410 –––
VDS = 10V
ƒ = 1.0MHz
Output Capacitance
–––
–––
680
250
–––
–––
pF
Reverse Transfer Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
@TC=25°C (Body Diode)
Pulsed Source Current
(Body Diode)ꢁg
–––
–––
69
showing the
A
ISM
integral reverse
–––
–––
130
p-n junction diode.
TJ = 25°C, IS = 13A, VGS = 0V i
TJ = 25°C, IF = 13A
di/dt = 500A/μs i
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
20
33
1.0
30
50
V
ns
nC
Qrr
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
www.irf.com
IRF6633APbF
Absolute Maximum Ratings
Max.
Parameter
Units
2.3
Power Dissipation
Power Dissipation
Power Dissipation
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
D
D
D
P
J
1.5
42
270
Peak Soldering Temperature
Operating Junction and
°C
T
T
T
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
55
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
3.0
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.018
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
R1
R1
R2
R2
R3
τι (sec)
Ri (°C/W)
6.713214 0.003276
28.70184 0.9822
R3
τJ
τ
aτ
τJ
τ1
τ
τ
3 τ3
2 τ2
τ1
0.1
19.59917
41.2
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
3
IRF6633APbF
1000
100
10
1000
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
BOTTOM
BOTTOM
2.5V
1
2.5V
≤60μs PULSE WIDTH
Tj = 150°C
≤60μs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 16A
D
VGS = 4.5V
= 10V
V
100
10
1
GS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
V
= 10V
DS
≤60μs PULSE WIDTH
0.1
1.5
2.0
V
2.5
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
J
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
10000
1000
100
V
C
= 0V,
f = 1 MHZ
GS
T
= 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
J
= C + C , C SHORTED
iss
gs
gd ds
18
14
10
6
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
C
oss
C
rss
2
0
20
40
60
80
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
D
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
www.irf.com
IRF6633APbF
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100μsec
1msec
1
10msec
10.0
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.1
0.1
1.0
100.0
0.2
0.4
0.6
0.8
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
2.0
1.5
1.0
0.5
70
60
50
40
30
20
10
0
I
= 250μA
D
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Junction Temperature ( °C )
J
T
, Case Temperature (°C)
C
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
240
I
D
TOP
1.45A
1.8A
13A
200
160
120
80
BOTTOM
40
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy Vs. Drain Current
www.irf.com
5
IRF6633APbF
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
VGS
R
G
+
-
V
DD
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
td(off)
tr
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6633APbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MU Outline
(Medium Size Can, U-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
www.irf.com
7
IRF6633APbF
DirectFET Outline Dimension, MU Outline
(Medium Size Can, U-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.201
0.156
0.018
0.030
0.032
0.031
0.022
0.012
0.061
0.118
0.028
0.003
0.007
A
B
C
D
E
F
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.73 0.77
0.78 0.82
0.75 0.79
0.53 0.57
0.26 0.30
1.43 1.56
2.88 3.01
0.59 0.70
0.03 0.08
0.08 0.17
0.246
0.189
0.152
0.014
0.029
0.031
0.030
0.021
0.010
0.056
0.113
0.023
0.001
0.003
G
H
J
K
L
M
N
P
DirectFET Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
www.irf.com
IRF6633APbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6633ATRPbF). For 1000 parts on 7"
reel, order IRF6633ATR1PbF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/08
www.irf.com
9
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