IRF6633 [INFINEON]

DirectFET Power MOSFET; DirectFET功率MOSFET


型号：	IRF6633
厂家：	Infineon
描述：	DirectFET Power MOSFET DirectFET功率MOSFET
文件：	总9页 (文件大小：264K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 96989

IRF6633

DirectFET Power MOSFET

Typical values (unless otherwise specified)

l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)

V_DSS

V_GS

R_DS(on)

20V max ±20V max

4.1mΩ@ 10V 7.0mΩ@ 4.5V

l Dual Sided Cooling Compatible

l Ultra Low Package Inductance

Q_{g tot}Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters

11nC

4.0nC 1.2nC

32nC

8.8nC

1.8V

l Optimized for both Sync.FET and some Control FET

application

l Low Conduction and Switching Losses

l Compatible with existing Surface Mount Techniques

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

±20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

132

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

I = 13A

= 16V

= 16A

VDS= 10V

= 125°C

= 25°C

2.0

4.0

6.0

8.0

10.0

, Gate-to-Source Voltage (V)

Fig 1. Typical On-Resistance Vs. Gate Voltage

Total Gate Charge (nC)

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.51mH, R_G= 25Ω, I_AS= 13A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

www.irf.com

6/2/05

IRF6633

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250µA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

–––

Reference to 25°C, I = 1mA

∆ΒV_DSS/∆T_J

R_DS(on)

–––

1.4

––– mV/°C

V_GS= 10V, I_D= 16A c

V_GS= 4.5V, I_D= 13A c

V_DS= V_GS, I_D= 250µA

mΩ

4.1

7.0

1.8

-5.2

–––

5.6

9.4

2.2

V_GS(th)

Gate Threshold Voltage

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

––– mV/°C

V_DS= 16V, V_GS= 0V

1.0

150

100

-100

–––

µA

_DS= 16V, V_GS= 0V, T_J= 125°C

_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= -20V

V_DS= 10V, I_D= 13A

gfs

Q_g

–––

_DS= 10V

_GS= 4.5V

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

3.3

1.2

4.0

2.5

5.2

8.8

1.5

9.7

–––

I_D= 13A

See Fig. 15

V_DS= 10V, V_GS= 0V

Ω

Gate Resistance

V_DD= 16V, V_GS= 4.5Vꢁc

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

I_D= 13A

Rise Time

Clamped Inductive Load

Turn-Off Delay Time

Fall Time

4.3

_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 1250 –––

V_DS= 10V

Output Capacitance

–––

630

200

–––

ƒ = 1.0MHz

Reverse Transfer Capacitance

Diode Characteristics

Conditions

Parameter

Min. Typ. Max. Units

I_S

MOSFET symbol

Continuous Source Current

@T_C=25°C (Body Diode)

Pulsed Source Current

(Body Diode)ꢁd

–––

showing the

I_SM

integral reverse

–––

132

p-n junction diode.

T_J= 25°C, I_S= 13A, V_GS= 0V c

T_J= 25°C, I_F= 13A

di/dt = 500A/µs c

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

0.8

1.0

Q_rr

Notes:

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Repetitive rating; pulse width limited by max. junction temperature.

www.irf.com

IRF6633

Absolute Maximum Ratings

Max.

Parameter

Units

2.3

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

1.5

270

Peak Soldering Temperature

Operating Junction and

°C

-40 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

Max.

Units

°C/W

W/°C

R_θJA

Junction-to-Ambient

Junction-to-Case

R_θJA

–––

3.0

R_θJA

R_θJC

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

Linear Derating Factor

–––

0.018

100

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

R₄

R₅

Ri (°C/W) τi (sec)

R₅

0.02

0.01

^Jτ_J

0.6676

1.0462

1.5611

29.282

25.455

0.000066

0.000896

0.004386

0.68618

^Cτ

¹τ₁

²τ₂

³τ₃

⁴τ₄

⁵τ₅

Ci= τi/Ri

0.1

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.01

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

T_Cmeasured with thermocouple incontact with top (Drain) of part.

Surface mounted on 1 in. square Cu board, steady state.

ꢀ R is measured at T_Jof approximately 90°C.

Used double sided cooling , mounting pad.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air)

Mounted to a PCB with

small clip heatsink (still air)

Surface mounted on 1 in. square Cu

board (still air).

www.irf.com

IRF6633

1000

100

VGS

10V

VGS

10V

TOP

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

100

BOTTOM

2.5V

≤60µs PULSE WIDTH

Tj = 150°C

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

1000

2.0

1.5

1.0

0.5

= 16A

VGS = 4.5V

= 10V

100

= 150°C

= 25°C

= -40°C

= 10V

≤60µs PULSE WIDTH

0.1

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

-60 -40 -20

20 40 60 80 100 120 140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 7. Normalized On-Resistance vs. Temperature

Fig 6. Typical Transfer Characteristics

10000

1000

100

= 0V,

f = 1 MHZ

= 25°C

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 10V

= C + C , C SHORTED

iss

gd ds

= C

rss

= C + C

oss

iss

oss

rss

100

, Drain-to-Source Voltage (V)

I , Drain Current (A)

Fig 9. Typical On-Resistance Vs.

Drain Current and Gate Voltage

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

www.irf.com

IRF6633

OPERATION IN THIS AREA

LIMITED BY R (on)

1000

100

1000.0

100.0

10.0

1.0

= 150°C

= 25°C

= -40°C

100µsec

1msec

10msec

= 25°C

Tj = 150°C

Single Pulse

= 0V

1.0

0.1

1.0

10.0

100.0

0.2

0.4

0.6

0.8

1.2

, Drain-toSource Voltage (V)

, Source-to-Drain Voltage (V)

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig11. Maximum Safe Operating Area

2.5

2.0

1.5

1.0

= 250µA

-75 -50 -25

75 100 125 150

100

125

150

, Junction Temperature ( °C )

, Case Temperature (°C)

Fig 13. Typical Threshold Voltage vs. Junction

Fig 12. Maximum Drain Current vs. Case Temperature

Temperature

200

TOP

5.7A

8.7A

13A

160

120

BOTTOM

100

125

150

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy Vs. Drain Current

www.irf.com

IRF6633

Current Regulator

Same Type as D.U.T.

Vds

50KΩ

Vgs

.2µF

.3µF

12V

D.U.T.

Vgs(th)

3mA

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

(BR)DSS

15V

DRIVER

D.U.T

V_GS

20V

0.01

Ω

Fig 16c. Unclamped Inductive Waveforms

Fig 16b. Unclamped Inductive Test Circuit

L_D

V_DS

90%

V_DD

10%

V_GS

D.U.T

V_GS

t_d(on)

t_d(off)

t_r

Pulse Width < 1µs

Duty Factor < 0.1%

t_f

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

www.irf.com

IRF6633

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET^®Power MOSFETs

DirectFET Substrate and PCB Layout, MP Outline

(Medium Size Can, P-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G- Gate

D- Drain

S- Source

www.irf.com

IRF6633

DirectFET Outline Dimension, MP Outline

(Medium Size Can, P-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DIMENSIONS

IMPERIAL

METRIC

CODE

MAX

MIN

6.25

4.80

3.85

0.35

0.58

0.75

0.53

0.63

1.59

2.87

0.59

0.03

0.08

MAX

0.250

0.199

0.156

0.018

0.032

0.031

0.022

0.026

0.068

0.119

0.028

0.003

0.007

NOTE: CONTROLLING

DIMENSIONS ARE IN MM

0.246

1.889

0.152

0.014

0.023

0.030

0.021

0.025

0.063

0.113

0.023

0.001

0.003

6.35

5.05

3.95

0.45

0.62

0.79

0.57

0.67

1.72

3.04

0.70

0.08

0.17

DirectFET Part Marking

www.irf.com

IRF6633

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6633). For 1000 parts on 7" reel,

order IRF6633TR1

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

METRIC

MAX

N.C

IMPERIAL

METRIC

MAX

IMPERIAL

CODE

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

MIN

177.77 N.C

0.75

0.53

0.059

2.31

N.C

19.06

13.5

1.5

N.C

13.2

N.C

12.8

N.C

58.72

N.C

18.4

14.4

15.4

13.50

12.01

0.47

11.9

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/05

www.irf.com

IRF6633 [INFINEON]

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