IRF6648TR1PBF [INFINEON]
Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;型号: | IRF6648TR1PBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 瞄准线 |
文件: | 总10页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97043C
IRF6648
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
Qg tot Qgd
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
60V max ±20V max
5.5mΩ@ 10V 36nC 14nC
l Optimized for High Frequency Switching
l Optimized for Synchronous Rectification for 5V
to 12V outputs
l Ideal for 24V input Primary Side Forward Converters
l Low Conduction Losses
l Compatible with Existing Surface Mount Techniques
DirectFET
ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a
primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
60
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
86
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
@ TC = 25°C
D
69
@ TC = 70°C
D
IDM
260
81
A
I
I
@ TC = 25°C
@ TC = 70°C
Continuous Source Current (Body Diode)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
S
S
52
ISM
260
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
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1
02/28/06
IRF6648
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60
–––
–––
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
∆ΒVDSS/∆TJ
RDS(on)
––– 0.076 –––
VGS = 10V, ID = 17A g
–––
3.0
5.5
4.0
-11
–––
–––
–––
–––
–––
36
7.0
4.9
VDS = VGS, ID = 150µA
VGS(th)
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
31
––– mV/°C
VDS = 60V, VGS = 0V
20
250
100
-100
–––
50
µA
nA
S
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 10V, ID = 17A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 30V
Qgs1
Qgs2
Qgd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
7.5
2.7
14
–––
–––
21
VGS = 10V
ID = 17A
nC
Qgodr
Qsw
Qoss
RG (Internal)
td(on)
tr
12
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 14
17
VDS = 16V, VGS = 0V
21
nC
Gate Resistance
1.0
16
Ω
VDD = 30V, VGS = 10Vꢁg
Turn-On Delay Time
ID = 17A
Rise Time
29
td(off)
tf
RG= 6.2Ω
See Fig. 16
VGS = 0V
Turn-Off Delay Time
28
ns
Fall Time
13
Ciss
Input Capacitance
––– 2120 –––
VDS = 25V
ƒ = 1.0MHz
Coss
Crss
Coss
Coss
Output Capacitance
–––
–––
600
170
–––
–––
pF
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, f=1.0MHz
––– 2450 –––
––– 440 –––
VGS = 0V, VDS = 48V, f=1.0MHz
Output Capacitance
Avalanche Characteristics
Parameter
Conditions
Min. Typ. Max. Units
EAS
TJ = 25°C, IS = 34A, RG = 25Ω
L = 0.082mH. See Fig. 13
Single Pulse Avalanche Energy
–––
–––
47
mJ
Diode Characteristics
Conditions
TJ = 25°C, IS = 17A, VGS = 0V g
TJ = 25°C, IF = 17A, VDD = 30V
di/dt = 100A/µs g
Parameter
Min. Typ. Max. Units
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
1.3
47
56
V
31
ns
nC
Qrr
37
Notes:
ꢀPulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6648
Absolute Maximum Ratings
Max.
Parameter
Units
2.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
–––
1.0
Max.
45
Units
Rθ
Rθ
Rθ
Rθ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Case
–––
1.4
°C/W
JA
JC
Junction-to-PCB Mounted
–––
J-PCB
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
0.1
τi (sec)
Ri (°C/W)
τ
J τJ
τ
τ
CτC
0.17199 0.000044
0.67673 0.001660
0.54961 0.007649
τ
1 τ1
τ
2 τ2
3 τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 1. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
R is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu, steady state (still air).
Used double sided cooling, mounted on 1 in. square Cu board
PCB with small clip heatsink (still air).
θ
Note
Note
Note
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3
IRF6648
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
100
10
1
6.0V
6.0V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 3. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 10V
I
= 86A
D
DS
V
= 10V
≤
60µs PULSE WIDTH
GS
T
= 150°C
= 25°C
= -40°C
J
J
J
T
T
1
0.1
2
4
6
8
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Normalized On-Resistance vs. Temperature
Fig 4. Typical Transfer Characteristics
10000
1000
100
12.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 17A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
10.0
rss
oss
gd
V
V
= 48V
= 30V
DS
DS
= C + C
ds
gd
C
8.0
6.0
4.0
2.0
0.0
iss
C
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40
V
Q , Total Gate Charge (nC)
G
DS
Fig 7. Typical Total Gate Charge vs
Fig 6. Typical Capacitance vs.Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRF6648
30
25
20
15
10
5
60
50
40
30
20
10
0
T
= 25°C
I
= 17A
J
D
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
T
= 125°C
J
T
= 25°C
J
0
0
20
40
60
80
100
4
6
8
10
12
14
16
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 9. Typical On-Resistance vs. Drain Current
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
6.0
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100
10
1
5.0
4.0
I
I
I
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
3.0
2.0
V
= 0V
1.2
GS
0
0.0
0.2
0.4
0.6
0.8
1.0
1.4
-75 -50 -25
0
25 50 75 100 125 150
T , Temperature ( °C )
J
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical Threshold Voltage vs.
Junction Temperature
200
180
160
140
120
100
80
1000
OPERATION IN THIS AREA
I
TOP
D
LIMITED BY R (on)
DS
12A
18A
100µsec
1msec
100
10
1
BOTTOM 34A
10msec
60
40
Tc = 25°C
Tj = 150°C
Single Pulse
20
0
0.1
25
50
75
100
125
150
0
1
10
100
Starting T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig12. Maximum Safe Operating Area
Fig 13. Maximum Avalanche Energy vs. Drain Current
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5
IRF6648
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
Qgs1
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
VGS
20V
0.01
Ω
t
p
I
AS
Fig 15a. Unclamped Inductive Test Circuit
Fig 15b. Unclamped Inductive Waveforms
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
VGS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
td(off)
tr
tf
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
6
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IRF6648
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
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7
IRF6648
DirectFET Outline Dimension, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET Part Marking
8
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IRF6648
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6648). For 1000 parts on 7" reel,
order IRF6648TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/06
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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