IRF6727M [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRF6727M
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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PD - 96122A

IRF6727MPbF

IRF6727MTRPbF

DirectFET Power MOSFET

Typical values (unless otherwise specified)

l RoHS Compliant and Halogen Free

l Low Profile (<0.7 mm)

V_DSS

V_GS

R_DS(on)

30V max ±20V max

1.22mΩ@ 10V 1.84mΩ@ 4.5V

l Dual Sided Cooling Compatible

l Ultra Low Package Inductance

Q_{g tot}Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters

49nC

16nC

5.3nC

45nC

28nC

1.8V

l Optimized for both Sync.FET and some Control FET

application

l Low Conduction and Switching Losses

l Compatible with existing Surface Mount Techniques

l 100% Rg tested

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve

the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-

age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6727MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6727MPbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

±20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

180

260

250

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

5.0

4.0

3.0

2.0

1.0

0.0

= 32A

I = 25A

= 24V

= 15V

= 125°C

= 25°C

10 15 20 25 30 35 40 45 50 55

Q , Total Gate Charge (nC)

Gate -to -Source Voltage (V)

GS,

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.77mH, R_G= 25Ω, I_AS= 25A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

www.irf.com

04/30/09

IRF6727MPbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250µA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

–––

1.35

–––

160

–––

Reference to 25°C, I = 1mA

∆ΒV_DSS/∆T_J

R_DS(on)

––– mV/°C

V_GS= 10V, I_D= 32A

V_GS= 4.5V, I_D= 25A

V_DS= V_GS, I_D= 100µA

1.22

1.84

1.8

-6.5

–––

1.7

2.4

Ω

V_GS(th)

Gate Threshold Voltage

2.35

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– mV/°C

V_DS= 24V, V_GS= 0V

V_DS= 24V, V_GS= 0V, T_J= 125°C

V_GS= 20V

1.0

150

100

-100

–––

µA

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= -20V

V_DS= 15V, I_D= 25A

gfs

Q_g

V_DS= 15V

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

–––

2.5

V_GS= 4.5V

I_D= 25A

5.3

See Fig. 15

21.3

V_DS= 16V, V_GS= 0V

Gate Resistance

1.5

Ω

V_DD= 15V, V_GS= 4.5V

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

–––

I_D= 25A

Rise Time

R_G= 1.8Ω

See Fig. 17

Turn-Off Delay Time

Fall Time

_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 6190 –––

––– 1280 –––

V_DS= 15V

Output Capacitance

ƒ = 1.0MHz

Reverse Transfer Capacitance

–––

610

–––

Diode Characteristics

Conditions

Parameter

Min. Typ. Max. Units

I_S

MOSFET symbol

Continuous Source Current

–––

110

260

showing the

(Body Diode)

I_SM

integral reverse

Pulsed Source Current

(Body Diode)

p-n junction diode.

T_J= 25°C, I_S= 25A, V_GS= 0V

T_J= 25°C, I_F= 25A

di/dt = 250A/µs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

0.77

1.0

Q_rr

Notes:

Pulse width ≤ 400µs; duty cycle ≤ 2%.

www.irf.com

IRF6727MPbF

Absolute Maximum Ratings

Max.

Parameter

Units

2.8

Power Dissipation

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

1.8

270

Peak Soldering Temperature

Operating Junction and

°C

-40 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

Max.

Units

°C/W

W/°C

R_θJA

Junction-to-Ambient

Junction-to-Case

R_θJA

–––

1.4

R_θJA

R_θJC

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

Linear Derating Factor

–––

0.022

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

R₄

^Jτ_J

1.1959

3.1186

22.998

17.704

0.000163

0.009223

0.9465

41.2

^Aτ_A

¹τ₁

²τ₂

³τ₃

⁴τ₄

0.1

Ci= τi/Ri

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

1000

, Rectangular Pulse Duration (sec)

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

R is measured at T_Jof approximately 90°C.

Used double sided cooling , mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air)

Mounted to a PCB with

small clip heatsink (still air)

Surface mounted on 1 in. square Cu

(still air).

www.irf.com

IRF6727MPbF

1000

100

VGS

10V

VGS

10V

TOP

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

100

BOTTOM

2.3V

0.1

60µs PULSE WIDTH

Tj = 25°C

60µs PULSE WIDTH

≤

Tj = 150°C

0.01

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

1000

100

2.0

1.5

1.0

0.5

= 15V

= 32A

≤

60µs PULSE WIDTH

= 150°C

= 25°C

= -40°C

= 10V

= 4.5V

0.1

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 7. Normalized On-Resistance vs. Temperature

Fig 6. Typical Transfer Characteristics

100000

10000

1000

= 0V,

= C

f = 1 MHZ

T = 25°C

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 8.0V

Vgs = 10V

+ C , C

SHORTED

iss

= C

rss

oss

= C + C

iss

oss

rss

100

150

200

250

, Drain-to-Source Voltage (V)

100

I , Drain Current (A)

Fig 9. Typical On-Resistance vs.

Drain Current and Gate Voltage

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

www.irf.com

IRF6727MPbF

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100µsec

1msec

= 150°C

= 25°C

= -40°C

10msec

= 25°C

0.1

0.01

= 150°C

= 0V

Single Pulse

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

, Source-to-Drain Voltage (V)

0.01

0.10

V , Drain-to-Source Voltage (V)

1.00

10.00

100.00

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig11. Maximum Safe Operating Area

200

180

160

140

120

100

3.0

2.5

2.0

1.5

1.0

0.5

= 100µA

= 150µA

= 250µA

= 1.0mA

= 1.0A

-75 -50 -25

25 50 75 100 125 150

100

125

150

, Temperature ( °C )

, Case Temperature (°C)

Fig 13. Typical Threshold Voltage vs. Junction

Fig 12. Maximum Drain Current vs. Case Temperature

Temperature

1000

TOP

2.6A

3.7A

800

600

400

200

BOTTOM 25A

100

125

150

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

www.irf.com

IRF6727MPbF

Vds

Vgs

VCC

DUT

Vgs(th)

20K

Qgs1

Qgs2

Qgodr

Qgd

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01Ω

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

R_D

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

10%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

d(on)

d(off)

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

www.irf.com

IRF6727MPbF

Driver Gate Drive

P.W.

D =

D.U.T

Period

_V***

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET^®Power MOSFETs

DirectFET Board Footprint, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

www.irf.com

IRF6727MPbF

DirectFET Outline Dimension, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes

all recommendations for stencil and substrate designs.

DIMENSIONS

IMPERIAL

METRIC

CODE

MIN

6.25

MAX

6.35

MAX

0.250

0.201

0.156

0.018

0.028

0.056

0.033

0.017

0.039

0.095

0.0274

0.0031

0.007

0.246

0.189

0.152

0.014

0.027

0.054

0.032

0.015

0.035

0.090

0.0235

0.0008

0.003

4.80 5.05

3.85

0.35

0.68

1.38

0.80

0.38

3.95

0.45

0.72

1.42

0.84

0.42

0.88 1.01

2.28 2.41

0.616 0.676

0.020 0.080

0.08

0.17

DirectFET Part Marking

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

www.irf.com

IRF6727MPbF

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6727MTRPBF). For 1000 parts on 7"

reel, order IRF6727MTR1PBF

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

IMPERIAL

METRIC

MAX

METRIC

MIN

MAX

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

CODE

MIN

MAX

N.C

12.992

0.795

0.504

0.059

3.937

N.C

330.0

20.2

12.8

1.5

N.C

13.2

N.C

18.4

14.4

15.4

177.77 N.C

0.75

0.53

0.059

2.31

N.C

19.06

13.5

1.5

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

0.488

0.469

0.47

12.4

11.9

LOADED TAPE FEED DIRECTION

DIMENSIONS

METRIC

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

MIN

7.90

3.90

11.90

5.45

5.10

6.50

1.50

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

0.311

0.154

0.469

0.215

0.201

0.256

0.059

1.60

0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.04/2009

www.irf.com

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRF6727M [INFINEON]

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