IRF6898MTRPBF [INFINEON]
Power Field-Effect Transistor, 35A I(D), 25V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;
| 型号： | IRF6898MTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 35A I(D), 25V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF6898MPbF
IRF6898MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
lDual Sided Cooling Compatible
l Low Package Inductance
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max
0.8mΩ@ 10V 1.2mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
41nC
15nC 4.7nC 66nC 43nC
1.6V
S
G
D
D
S
DirectFET ISOMETRIC
MX
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MX
Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Max.
25
Parameter
Units
V
VDS
Drain-to-Source Voltage
±16
35
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
28
A
@ TA = 70°C
@ TC = 25°C
213
280
473
28
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
3.0
2.0
1.0
0.0
14
12
10
8
I = 28A
D
V
V
= 20V
I
= 35A
DS
D
= 13V
DS
T
= 125°C
J
6
4
2
T
= 25°C
J
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
Q
Total Gate Charge (nC)
V
Gate -to -Source Voltage (V)
G
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀRepetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.21mH, RG = 50Ω, IAS = 28A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
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© 2013 International Rectifier
March 21, 2013
IRF6898MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
25
–––
–––
V
VGS = 0V, ID = 1.0mA
ΔΒVDSS/ΔTJ
RDS(on)
––– 0.02 ––– V/°C ID = 10mA ( 25°C-125°C)
Static Drain-to-Source On-Resistance –––
–––
0.8
1.2
1.1
1.6
2.1
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 28A
VDS = VGS, ID = 100μA
mΩ
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
1.1
–––
–––
–––
–––
175
–––
–––
–––
–––
–––
1.6
V
-4.9
–––
–––
––– mV/°C VDS = VGS, ID = 10mA
500
100
μA
VDS = 20V, VGS = 0V
IGSS
nA VGS = 16V
VGS = -16V
––– -100
gfs
–––
41
–––
62
S
VDS =13V, ID =28A
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
15
–––
–––
–––
–––
VDS = 13V
4.7
15
nC VGS = 4.5V
ID = 28A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
6.3
See Fig.15
––– 19.7 –––
–––
–––
–––
–––
–––
–––
43
0.3
18
46
24
19
–––
–––
–––
–––
–––
–––
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 13V, VGS = 4.5V
Rise Time
ID = 28A
ns RG= 1.8Ω
See Fig.17
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 5435 –––
––– 1780 –––
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
–––
359
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
Continuous Source Current
D
S
–––
–––
35
showing the
(Body Diode)
A
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
280
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
––– 0.75
V
TJ = 25°C, IS = 28A, VGS = 0V
32
66
48
99
ns TJ = 25°C, IF =28A
di/dt = 300A/μs
nC
Qrr
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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© 2013 International Rectifier
March 21, 2013
IRF6898MTRPbF
Absolute Maximum Ratings
Max.
Parameter
Units
2.1
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.3
78
270
Peak Soldering Temperature
Operating Junction and
°C
T
T
T
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.6
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.017
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
3
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© 2013 International Rectifier
March 21, 2013
IRF6898MTRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
BOTTOM
BOTTOM
1
2.3V
0.1
0.01
2.3V
1
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
I
= 35A
V
V
= 10V
D
GS
GS
= 4.5V
T = 150°C
J
100
10
1
T = 25°C
J
T = -40°C
J
V
= 15V
DS
≤60μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
6.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
Vgs = 3.5V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
Vgs = 15V
T
= 25°C
J
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
5.0
4.0
3.0
2.0
1.0
0.0
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
C
rss
100
0
25
50 75 100 125 150 175 200
1
10
, Drain-to-Source Voltage (V)
100
V
I , Drain Current (A)
D
DS
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
4
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March 21, 2013
IRF6898MTRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1msec
10msec
100μsec
DC
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
Ta = 25°C
Tj = 150°C
V
= 0V
Single Pulse
GS
0.1
1
0.01
0.1
1
10
100
0.1
0.4
0.7
1.0
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
225
200
175
150
125
100
75
I
= 10mA
D
50
25
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
2000
1800
1600
1400
1200
1000
800
I
D
TOP
1.7A
2.5A
BOTTOM 28A
600
400
200
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
© 2013 International Rectifier
5
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March 21, 2013
IRF6898MTRPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
-
I
A
20V
t
0.01Ω
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 17a. Switching Time Test Circuit
www.irf.com © 2013 International Rectifier
Fig 17b. Switching Time Waveforms
March 21, 2013
6
IRF6898MTRPbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
V***
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFET Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET plus.
This includes all recommendations for stencil and substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
D
D
D
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
7
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© 2013 International Rectifier
March 21, 2013
IRF6898MTRPbF
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFETplus.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MIN
CODE MIN
MAX
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.01
2.41
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.023
0.003
0.007
A
B
C
D
E
F
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.021
0.001
0.003
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
G
H
J
K
L
M
R
P
0.535 0.595
0.020 0.080
0.17
0.08
DirectFET Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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© 2013 International Rectifier
March 21, 2013
IRF6898MTRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6898MTRPBF). For 1000 parts on 7"
reel, order IRF6898MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
METRIC IMPERIAL
TR1 OPTION (QTY 1000)
METRIC IMPERIAL
DIMENSIONS
METRIC
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
MAX
N.C
MIN
MAX
N.C
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
CODE
MIN
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
0.520
N.C
13.2
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
N.C
18.4
14.4
15.4
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
G
H
1.60
0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Revision History
Date
Comments
Updated header Qrr from 32nC to 66nC on page1
3/15/2013
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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© 2013 International Rectifier
March 21, 2013
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