IRF7201PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7201PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总7页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95022
IRF7201PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
A
A
D
1
2
3
4
8
S
S
S
G
VDSS = 30V
7
D
6
D
5
D
RDS(on) = 0.030Ω
l Lead-Free
Top View
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designerwithanextremelyefficientandreliabledevice
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
30
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
7.3
5.8
A
58
PD @TC = 25°C
PD @TC = 70°C
2.5
W
Power Dissipation
1.6
0.02
Linear Derating Factor
W/°C
V
VGS
Gate-to-Source Voltage
± 20
VGSM
EAS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
30
V
70
mJ
V/ns
°C
dv/dt
TJ, TSTG
Peak Diode Recovery dv/dt
5.0
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambientꢀ
Typ.
–––
Max.
50
Units
°C/W
RθJA
www.irf.com
1
9/30/04
IRF7201PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.050
1.0 ––– –––
5.8 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 10V, ID = 7.3A
GS = 4.5V, ID = 3.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID = 2.3A
Forward Transconductance
VDS = 24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 19
28
ID = 4.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 6.3 9.5
––– 7.0 –––
––– 35 –––
––– 21 –––
––– 19 –––
––– 550 –––
––– 260 –––
––– 100 –––
nC VDS = 24V
VGS = 10V, See Fig. 10
VDD = 15V
ID = 4.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 3.2Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
58
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.2
––– 48 73
––– 73 110
V
TJ = 25°C, IS = 4.6A, VGS = 0V
ns
TJ = 25°C, IF = 4.6A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. (See fig. 11)
VDD = 15V, starting TJ = 25°C, L = 6.6mH
RG = 25Ω, IAS = 4.6A. (See Figure 8)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ When mounted on 1 inch square copper board, t<10 sec
2
www.irf.com
IRF7201PbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
= 25°C
20µs PULSE WIDTH
T
J
T
J
= 150°C
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
TJ = 25°C
TJ = 150°C
10
T = 150°C
J
10
T = 25°C
J
1
VDS = 10V
20µs PULSE WIDTH
V
GS
= 0V
A
0.1
1
5.5A
0.4
0.6
0.8
1.0
1.2
3.0
3.5
4.0
4.5
5.0
V
, Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
www.irf.com
3
IRF7201PbF
0.20
0.15
0.10
0.05
0.00
2.0
I
= 4.6A
D
1.5
1.0
0.5
0.0
V
GS
= 4.5V
V
= 10V
GS
30
V
= 10V
GS
A
A
0
10
20
40
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
, Junction Temperature (°C)
J
I
, Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. On-Resistance Vs. Drain Current
Vs. Temperature
200
0.05
I
D
TOP
2.1A
3.7A
BOTTOM 4.6A
160
120
80
40
0
0.04
0.03
0.02
I
= 7.3A
D
A
150
A
2
4
6
8
10
12
14
16
25
50
75
100
125
Starting T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 7. On-Resistance Vs. Gate Voltage
4
www.irf.com
IRF7201PbF
20
16
12
8
1000
800
600
400
200
0
I
= 4.6A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
= C
= C + C
ds
gd
C
iss
C
oss
4
C
rss
0
A
A
0
5
10
15
20
25
30
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T =P
J
SINGLE PULSE
t / t
1
x Z
(THERMAL RESPONSE)
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7201PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
6
www.irf.com
IRF7201PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
www.irf.com
7
相关型号：
IRF7201TRPBF
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
IRF7203TR
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF7204TR
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF7204TRPBF
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
©2020 ICPDF网 联系我们和版权申明