IRF7204PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7204PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95165
IRF7204PbF
HEXFET® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
A
D
1
2
3
4
8
S
S
VDSS = -20V
7
D
6
S
G
D
RDS(on) = 0.060Ω
5
D
l Lead-Free
Description
ID = -5.3A
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-5.3
-4.2
-21
A
PD @TC = 25°C
Power Dissipation
2.5
W
W/°C
±
Linear Derating Factor
0.020
VGS
Gate-to-Source
Voltage
12V
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
-1.7
V/nS
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
10/6/04
IRF7204PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.022 V/°C Reference to 25°C, I D = -1mA
0.060
0.10
-1.0 -2.5
7.9
-25
-250
-100
100
25
5.0
8.0
VGS = -10V, ID = -5.3A
VGS = -4.5V, ID = -2.0A
VDS = VGS, ID = -250µA
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = -15V, ID = -5.3A
VDS = -16V, VGS = 0V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
VDS = -16V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
V
GS = -12V
GS = 12V
Qg
Qgs
Qgd
td(on)
tr
ID = -5.3A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = -10V
VGS = -10V
VDD = -10V
14
26
30
60
Rise Time
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
100 150
68 100
RG = 6.0Ω
RD = 10Ω
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
2.5
4.0
Between lead,6mm(0.25in.)
nH
pF
G
from package and center
of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
860
750
230
Output Capacitance
VDS = -10V
Reverse Transfer Capacitance
= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
S
IS
-2.5
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-15
p-n junction diode.
VSD
trr
Diode
Forward
Voltage
-1.2V J =T25°C, IS = -1.25A, VGS = 0V
Reverse Recovery Time
85 100
77 120
ns
TJ = 25°C, IF = -2.4A
Qrr
ton
Reverse RecoveryCharge
Forward Turn-On Time
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
IRF7204PbF
-VDS , Drain-to-Source Voltage ( V )
-VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
TJ , Junction Temperature ( °C )
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
IRF7204PbF
12
-VDS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
1ms
10ms
°
T = 25 C
A
J
°
T = 150 C
Single Pulse
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
IRF7204PbF
RD
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
AmbientTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
2
DM
0.02
0.01
1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
IRF7204PbF
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
.3µF
12V
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
Fig 12a. Basic Gate Charge Waveform
IRF7204PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig13. ForP-ChannelHEXFETS
IRF7204PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
IRF7204PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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