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IRF7314PBF [INFINEON]

Generation V Technology, Ultra Low On-Resistance; 第五代技术，超低导通电阻
IRF7314PBF
型号： IRF7314PBF
厂家： Infineon    Infineon
描述：

Generation V Technology, Ultra Low On-Resistance
第五代技术，超低导通电阻

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 局域网
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PD - 95181  
IRF7314PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual P-Channel MOSFET  
l Surface Mount  
l Fully Avalanche Rated  
l Lead-Free  
1
2
3
4
8
S1  
G1  
D1  
VDSS = -20V  
7
D1  
6
S2  
D2  
5
G2  
D2  
RDS(on) = 0.058Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
SO-8  
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)  
Symbol  
VDS  
Maximum  
-20  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
± 12  
TA = 25°C  
TA = 70°C  
-5.3  
-4.3  
-21  
-2.5  
Continuous Drain Currentꢀ  
ID  
A
Pulsed Drain Current  
IDM  
IS  
Continuous Source Current (Diode Conduction)  
TA = 25°C  
TA = 70°C  
2.0  
1.3  
Maximum Power Dissipation ꢀ  
P
D
W
Single Pulse Avalanche Energy  
Avalanche Current  
EAS  
IAR  
150  
mJ  
A
-2.9  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dtƒ  
Junction and Storage Temperature Range  
EAR  
0.20  
mJ  
dv/dt  
TJ,TSTG  
-5.0  
V/ ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Symbol  
Limit  
Units  
Maximum Junction-to-Ambientꢀ  
RθJA  
62.5  
°C/W  
10/7/04  
IRF7314PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
-20 ––– –––  
V
VGS = 0V, ID = -250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C Reference to 25°C, ID = -1mA  
––– 0.049 0.058  
––– 0.082 0.098  
-0.70 ––– –––  
––– 5.9 –––  
––– ––– -1.0  
––– ––– -25  
––– ––– 100  
––– ––– -100  
VGS = -4.5V, ID = -2.9A „  
VGS = -2.7V, ID = -1.5A „  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -1.5A  
VDS = -16V, VGS = 0V  
VDS = -16V, VGS = 0V, TJ = 55°C  
VGS = -12V  
RDS(on)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = 12V  
Qg  
––– 19  
29  
ID = -2.9A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
––– 4.0 6.1  
nC VDS = -16V  
VGS = -4.5V, See Fig. 10 „  
––– 7.7  
––– 15  
––– 40  
––– 42  
––– 49  
12  
22  
60  
63  
73  
VDD = -10V  
ID = -2.9A  
RiseTime  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 6.0Ω  
RD = 3.4Ω „  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
––– 780 –––  
––– 470 –––  
––– 240 –––  
Output Capacitance  
VDS = -15V  
ƒ = 1.0MHz, See Fig. 5  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
S
IS  
––– ––– -2.5  
A
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
G
––– ––– -21  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– -0.78 -1.0  
V
TJ = 25°C, IS = -2.9A, VGS = 0V ƒ  
TJ = 25°C, IF = -2.9A  
––– 47  
––– 49  
71  
73  
ns  
nC  
Qrr  
di/dt = 100A/µs ƒ  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 150°C  
,
max. junction temperature. ( See fig. 11 )  
‚ Starting TJ = 25°C, L = 35mH  
RG = 25Ω, IAS = -2.9A.  
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.  
IRF7314PbF  
100  
10  
1
100  
10  
1
VGS  
VGS  
TOP  
-7.50V  
-4.50V  
-4.00V  
-3.50V  
-3.00V  
-2.70V  
-2.00V  
TOP  
-7.50V  
-4.50V  
-4.00V  
-3.50V  
-3.00V  
-2.70V  
-2.00V  
BOTTOM -1.50V  
BOTTOM-1.50V  
-1.50V  
-1.50V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
T = 150 C  
J
°
T = 25 C  
J
0.1  
0.1  
0.1  
0.1  
1
10  
1
10  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
100  
100  
°
T = 25 C  
°
T = 150 C  
J
J
10  
°
T = 150 C  
J
10  
°
T = 25 C  
J
1
V
= -10V  
DS  
20µs PULSE WIDTH  
V
= 0 V  
GS  
1.2  
0.1  
0.2  
1
1.5  
0.4  
0.6  
0.8  
1.0  
1.4  
2.0  
2.5  
3.0  
3.5 4.0 4.5  
5.0  
-V ,Source-to-Drain Voltage (V)  
SD  
-V , Gate-to-Source Voltage (V)  
GS  
Fig 4. Typical Source-Drain Diode  
Fig 3. Typical Transfer Characteristics  
Forward Voltage  
IRF7314PbF  
2.0  
0.8  
0.6  
0.4  
0.2  
0.0  
I
= -2.9A  
D
1.5  
1.0  
0.5  
0.0  
V
= -2.7V  
GS  
V
= -4.5V  
GS  
V
= -4.5V  
GS  
A
A
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
0
4
8
12  
16  
20  
T , Junction Temperature (°C)  
J
-I , Drain Current (A)  
D
Fig 5. Normalized On-Resistance  
Fig 6. Typical On-Resistance Vs. Drain  
Vs. Temperature  
Current  
0.08  
400  
I
D
TOP  
-1.3A  
-2.3A  
0.07  
0.06  
0.05  
0.04  
0.03  
BOTTOM -2.9A  
300  
200  
100  
0
I
= -5.3A  
D
A
25  
50  
75  
100  
125  
150  
0.0  
2.0  
4.0  
6.0  
8.0  
°
Starting T , Junction Temperature ( C)  
J
VGS , Gate-to-Source Voltage (V)  
Fig 7. Typical On-Resistance Vs. Gate  
Fig 8. Maximum Avalanche Energy  
Voltage  
Vs. Drain Current  
IRF7314PbF  
1400  
1200  
1000  
800  
600  
400  
200  
0
10  
8
V
C
C
C
= 0V,  
f = 1MHz  
I
= -2.9A  
GS  
iss  
rss  
oss  
D
= C + C  
,
C
SHORTED  
gs  
gd  
ds  
= C  
gd  
V
= -16V  
DS  
= C + C  
ds  
gd  
C
iss  
6
C
oss  
4
C
rss  
2
A
0
A
1
10  
100  
0
5
10  
15  
20  
25  
30  
-V , Drain-to-Source Voltage (V)  
Q
, Total Gate Charge (nC)  
DS  
G
Fig 9. Typical Capacitance Vs.  
Fig 10. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
0.50  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
P
2
DM  
1
t
1
t
2
Notes:  
1. Duty factor D = t / t  
SINGLE PULSE  
1
(THERMAL RESPONSE)  
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
IRF7314PbF  
SO-8 Package Outline  
Dimensions are shown in milimeters (inches)  
INCHES  
MILLIMETERS  
DIM  
A
D
B
MIN  
.0532  
MAX  
.0688  
.0098  
.020  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
5
A
E
A1 .0040  
b
c
D
E
.013  
8
1
7
2
6
3
5
.0075  
.189  
.0098  
.1968  
.1574  
6
H
0.25 [.010]  
A
.1497  
4
e
.050 BASIC  
1.27 BASIC  
0.635 BASIC  
e1 .025 BASIC  
H
K
L
.2284  
.0099  
.016  
0°  
.2440  
.0196  
.050  
8°  
5.80  
0.25  
0.40  
0°  
6.20  
0.50  
1.27  
8°  
e
6X  
y
e1  
A
K x 45°  
A
C
y
0.10 [.004]  
8X c  
A1  
B
8X L  
8X b  
0.25 [.010]  
7
C
F OOT PRINT  
8X 0.72 [.028]  
NOT ES :  
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER  
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].  
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.  
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].  
6.46 [.255]  
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].  
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO  
ASUBSTRATE.  
3X 1.27 [.050]  
8X 1.78 [.070]  
SO-8 Part Marking Information (Lead-Free)  
E XAMPLE : T HIS IS AN IRF 7101 (MOS F E T )  
DATE CODE (YWW)  
P = DESIGNATES LEAD-FREE  
PRODUCT (OPTIONAL)  
Y = LAST DIGIT OF THE YEAR  
WW = WEEK  
XXXX  
F7101  
INTERNATIONAL  
RECTIFIER  
LOGO  
A = AS S E MB LY S IT E CODE  
LOT CODE  
PART NUMBER  
IRF7314PbF  
SO-8 Tape and Reel  
Dimensions are shown in milimeters (inches)  
TERMINAL NUMBER 1  
12.3 ( .484 )  
11.7 ( .461 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
330.00  
(12.992)  
MAX.  
14.40 ( .566 )  
12.40 ( .488 )  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualifications Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.10/04  

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