IRF7338PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7338PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总12页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95197
IRF7338PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
N-CHANNEL MOSFET
N-Ch P-Ch
1
2
3
4
8
S1
G1
D1
D1
7
VDSS 12V
-12V
6
5
S2
D2
D2
G2
P-CHANNEL MOSFET
RDS(on) 0.034Ω 0.150Ω
Top View
Description
These N and P channel MOSFETs from International
Rectifierutilizeadvancedprocessingtechniquestoachieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Max.
Parameter
Units
N-Channel
P-Channel
-12
VDS
Drain-to-Source Voltage
12
6.3
5.2
26
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
-3.0
A
-2.5
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
-13
PD @TA = 25°C
PD @TA = 70°C
2.0
1.3
16
W
mW/°C
VGS
Gate-to-Source Voltage
Junction and Storage Temperature Range
±12
± 8.0
V
TJ, TSTG
-55 to + 150
°C
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
62.5
°C/W
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1
9/30/04
IRF7338PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 12
P-Ch -12
—
—
—
—
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
N-Ch
P-Ch
—
—
—
—
—
—
0.01
-0.01
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
0.034
0.060
0.150
0.200
1.5
-1.0
—
—
20
-1.0
50
-25
±100 nA
±100
V
V
V
GS = 4.5V, ID = 6.0A
GS = 3.0V, ID = 2.0A
GS = -4.5V, ID = -2.9A
N-Ch
P-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS = -2.7V, ID = -1.5A
N-Ch 0.6
P-Ch -0.40
N-Ch 9.2
P-Ch 3.5
N-Ch
P-Ch
N-Ch
P-Ch
V
V
V
V
V
V
V
V
DS = VGS, ID = 250µA
DS = VGS, ID = -250µA
DS = 6.0V, ID = 6.0A
DS = -6.0V, ID = -1.5A
DS = 9.6V, VGS = 0V
DS = -9.6 V, VGS = 0V
VGS(th)
gfs
Gate Threshold Voltage
V
S
ForwardTransconductance
—
—
—
—
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
µA
DS = 9.6V, VGS = 0V, TJ = 55°C
DS = -9.6V, VGS = 0V, TJ = 55°C
N-Ch ––
VGS = ± 12V
VGS = ± 8.0V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
9.6
7.6
13
26
27
34
25
640
490
340
80
110
58
8.6
6.6
nC
1.9
1.3
3.9
1.6
—
—
—
ns
—
—
—
—
—
—
Qg
Total Gate Charge
Gate-to-SourceCharge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
N-Channel
ID = 6.0A, VDS = 6.0V, VGS = 4.5V
Qgs
Qgd
td(on)
tr
P-Channel
ID = -2.9A, VDS = -9.6V, VGS = -4.5 V
N-Channel
VDD = 6.0V, ID = 1.0A, RG = 6.0Ω,
VGS = 4.5V
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
DD = -6.0V, ID = -2.9A, RG = 6.0Ω,
V
VGS = -4.5V
Ciss
Coss
Crss
Input Capacitance
N-Channel
—
pF
—
—
—
—
V
GS = 0V, VDS = 9.0V, ƒ = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
P-Channel
GS = 0V, VDS = -9.0V, ƒ = 1.0KHz
V
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
37
43
20
6.3
-3.0
26
-13
1.3
-1.2
76
56
64
30
IS
Continuous Source Current (Body Diode)
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
Pulsed Source Current (Body Diode)
Diode Forward Voltage
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IS = -2.9A, VGS = 0V
V
VSD
trr
N-Channel
ns
nC
Reverse Recovery Time
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.9A, di/dt = -100A/µs
Qrr
Reverse Recovery Charge
Notes:
Surface mounted on 1 in square Cu board.
The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7338PbF
N-Channel
100
10
100
VGS
7.5V
VGS
7.5V
TOP
TOP
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
10
BOTTOM 1.5V
BOTTOM1.5V
1
1.5V
1
1.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100.0
10.0
1.0
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
10
T
= 25°C
1.0
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 0V
GS
1
0.1
1.0
2.0
3.0 4.0
0.4
0.6
SD
0.8
1.2
1.4
V
, Gate-to-Source Voltage (V)
GS
V
, Source-toDrain Voltage (V)
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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3
IRF7338PbF
N-Channel
2.0
0.12
0.10
0.08
0.06
0.04
0.02
0.00
6.3A
=
I
D
1.5
1.0
0.5
0.0
V
= 3.0V
GS
V
= 4.5V
GS
V
= 4.5V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
5
10
15
20
25
30
°
T , Junction Temperature
( C)
J
I
, Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
80
0.05
60
40
20
0
0.04
0.03
0.02
I
= 6.3A
D
0.00
0.00
0.00
0.01
0.10
1.00
10.00
3.0
4.0
5.0
6.0
7.0
8.0
Time (sec)
V
Gate -to -Source Voltage (V)
GS,
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Typical Power Vs. Time
Voltage
4
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IRF7338PbF
N-Channel
1000
800
600
400
200
0
12
10
8
V
C
= 0V,
= C
f = 1 MHZ
+ C C
GS
I = 6.0A
,
D
iss
gs
gd
ds
SHORTED
V
= 12V
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
Coss
6
4
2
Crss
0
0.0
2.0
4.0
6.0
8.0
10.0 12.0
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7338PbF
N-Channel
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 13a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
( C)
, Case Temperature
C
10%
V
GS
Fig 12. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 13b. Switching Time Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
12V
.3µF
VGS
+
Q
V
GS
GD
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7338PbF
P-Channel
100
10
1
100
VGS
-7.5V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.0V
VGS
-7.5V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.0V
TOP
TOP
10
1
BOTTOM -1.5V
BOTTOM -1.5V
-1.5V
-1.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 15. Typical Output Characteristics
Fig 16. Typical Output Characteristics
100.0
100
10.0
1.0
T
= 25°C
T = 150°C
J
J
10
T
= 150°C
J
T
= 25°C
1.0
J
V
= -10V
DS
V
= 0V
20µs PULSE WIDTH
GS
1
0.1
1.0
2.0
3.0 4.0
0.4
0.6
0.8
1.2
1.4
1.6
-V
, Gate-to-Source Voltage (V)
-V , Source-toDrain Voltage (V)
SD
GS
Fig 17. Typical Transfer Characteristics
Fig 18. Typical Source-Drain Diode
Forward Voltage
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7
IRF7338PbF
P-Channel
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
2.0
-3.0A
=
I
D
1.5
1.0
0.5
0.0
V
= -2.7V
GS
V
8
= -4.5V
GS
V
= -4.5V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
2
4
6
10
12
14
°
T , Junction Temperature
( C)
J
-I , Drain Current (A)
D
Fig 20. Typical On-Resistance Vs. Drain
Fig 19. Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
80
60
40
20
0
I
= -3.0A
D
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.00
0.00
0.00
0.01
0.10
1.00
10.00
-V
Gate -to -Source Voltage (V)
Time (sec)
GS,
Fig 21. Typical On-Resistance Vs. Gate
Fig 22. Maximum Avalanche Energy
Voltage
Vs. Drain Current
8
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IRF7338PbF
P-Channel
800
600
400
200
0
12
V
C
= 0V,
= C
f = 1 MHZ
+ C C
GS
I = -2.9A
D
,
iss
gs
gd
ds
SHORTED
V
= -9.6V
10
8
DS
VDS= -6.0V
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
6
4
Coss
Crss
2
0
0
2
4
6
8
10
1
10
100
Q
Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
-
DS
Fig 23. Typical Capacitance Vs.
Fig 24. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
IRF7338PbF
3.0
2.4
1.8
1.2
0.6
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 27a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
T
75
100
125
150
°
( C)
, Case Temperature
C
90%
Fig 26. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 27b. Switching Time Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 28a. Basic Gate Charge Waveform
Fig 28b. Gate Charge Test Circuit
10
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IRF7338PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDECOUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE EK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A= ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
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11
IRF7338PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
12
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