IRF7341GPBF [INFINEON]
HEXFET® Power MOSFET;
| 型号： | IRF7341GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总9页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7341GPbF
HEXFET® Power MOSFET
• Advanced Process Technology
• Dual N-Channel MOSFET
• Ultra Low On-Resistance
• 175°COperatingTemperature
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free
VDSS
55V
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
4.42A
• Halogen-Free
Description
1
2
3
4
8
S1
G1
S2
D1
TheseHEXFET®PowerMOSFET’sinaDualSO-8package
utilizethelastestprocessingtechniquestoachieveextremely
lowon-resistancepersiliconarea.Additionalfeaturesofthese
HEXFET Power MOSFET’s are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalancherating.Thesebenefitscombinetomakethisdesign
an extremely efficient and reliable device for use in a wide
variety of other applications.
7
D1
6
D2
5
D2
G2
SO-8
Top View
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dualMOSFETdiecapabilitymakeitidealinavarietyofpower
applications. Thisdual, surfacemountSO-8candramatically
reduce board space and is also available in Tape & Reel.
Standard Pack
Form
Tube/Bulk
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF7341GPbF
IRF7341GTRPbF
IRF7341GPbF
SO-8
Tape and Reel
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-Source Voltage
55
5.1
4.2
42
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.4
1.7
16
W
W
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
140
5.1
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
EAR
Repetitive Avalanche Energy
Junction and Storage Temperature Range
See Fig. 14, 15, 16
-55 to + 175
mJ
°C
TJ , TSTG
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
62.5
°C/W
1
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IRF7341GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.043 0.050
0.056 0.065
1.0 ––– –––
10.4 ––– –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
VGS = 10V, ID = 5.1A
VGS = 4.5V, ID = 4.42A
VDS = VGS, ID = 250μA
VDS = 10V, ID = 5.2A
VDS = 44V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
––– 29
––– 2.9 4.4
––– 7.3 11
44
ID = 5.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
pF
VDS = 44V
VGS = 10V
––– 9.2 –––
––– 7.7 –––
––– 31 –––
––– 12.5 –––
––– 780 –––
––– 190 –––
––– 66 –––
VDD = 28V
ID = 1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
2.4
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
42
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
––– 51 77
––– 76 114
V
TJ = 25°C, IS = 2.6A, VGS = 0V
TJ = 25°C, IF = 2.6A
ns
Qrr
nC di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
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IRF7341GPbF
100
10
1
100
10
1
VGS
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
VGS
TOP
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
5.2A
=
I
D
°
T = 25 C
2.0
1.5
1.0
0.5
0.0
J
°
T = 175 C
J
10
V
= 25V
DS
20μs PULSE WIDTH
V
=10V
GS
1
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
3.0
4.0
5.0 6.0
7.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRF7341GPbF
20
16
12
8
1400
1200
1000
800
600
400
200
0
I
D
=
5.2A
V
= 0V,
f = 1 MHZ
V
V
V
= 44V
= 27V
= 11V
GS
DS
DS
DS
C
= C
+
C
,
C
iss
SHORTED
gs
gd
ds
C
= C
rss
gd
C
= C + C
ds gd
oss
Ciss
Coss
Crss
4
0
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
Q , Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10
10us
100us
1ms
°
T = 25 C
J
1
10ms
1
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
0.1
1
10
100
1000
0.5
0.8
1.1
1.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7341GPbF
6.0
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
2
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRF7341GPbF
0.100
0.080
0.060
0.040
0.020
0.070
0.060
0.050
0.040
0.030
0.020
VGS = 4.5V
I
= 7.1A
D
VGS = 10V
40
2.0
4.0
V
6.0
8.0
10.0
12.0
14.0
16.0
0
10
20
30
50
60
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 11. Typical On-Resistance Vs.
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Q
G
10 V
400
320
240
160
80
I
D
Q
Q
GD
GS
TOP
2.1A
4.3A
5.1A
V
G
BOTTOM
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
0
25
50
75
100
125
°
( C)
150
175
V
GS
Starting Tj, Junction Temperature
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Fig 13b. Gate Charge Test Circuit
6
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IRF7341GPbF
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
avalanche losses
Tj = 25°C due to
Δ
0.01
1
0.05
0.10
0.1
0.01
0.001
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
140
TOP
BOTTOM 10% Duty Cycle
= 5.1A
Single Pulse
120
100
80
60
40
20
0
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
7
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IRF7341GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MI N
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
8X 0.72 [.028]
NOT ES:
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIME NS IONS ARE S HOWN IN MILLIME T E RS [INCHE S ].
4. OUT LINE CONF ORMS T O JE DEC OUT LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF8707GPBF
DATE CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT
Y = LAST DIGIT OF THE YEAR
WW = WE E K
A= ASSEMBLY SITE CODE
XXXX
F8707G
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER (GDESIGNATES
HALOGEN-FREE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7341GPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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相关型号：
IRF7341QTRPBF
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
INFINEON
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