IRF7342PBF [INFINEON]

HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ); HEXFET㈢功率MOSFET （ VDSS = -55V ， RDS （ ON） = 0.105ヘ）


型号：	IRF7342PBF
厂家：	Infineon
描述：	HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ) HEXFET㈢功率MOSFET （ VDSS = -55V ， RDS （ ON） = 0.105ヘ）
文件：	总7页 (文件大小：159K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95200

IRF7342PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= -55V

R_DS(on)= 0.105Ω

l Lead-Free

Description

Top View

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-55

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

-3.4

-2.7

-27

P_D@T_C= 25°C

P_D@T_C= 70°C

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

± 20

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

114

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

5.0

V/ns

°C

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambientꢀ

Typ.

–––

Max.

62.5

Units

°C/W

R_θJA

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10/7/04

IRF7342PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

-55 ––– –––

V_GS= 0V, I_D= -250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

––– -0.054 ––– V/°C Reference to 25°C, I_D= -1mA

––– 0.095 0.105

––– 0.150 0.170

-1.0 ––– –––

3.3 ––– –––

––– ––– -2.0

––– ––– -25

––– ––– -100

––– ––– 100

V_GS= -10V, I_D= -3.4A

R_DS(on)

StaticDrain-to-SourceOn-Resistance

Ω

V_GS= -4.5V, I_D= -2.7A

V_DS= V_GS, I_D= -250µA

V_DS= -10V, I_D= -3.1A

V_DS= -55V, V_GS= 0V

V_DS= -55V, V_GS= 0V, T_J= 55°C

V_GS= -20V

V_GS(th)

g_fs

GateThresholdVoltage

Forward Transconductance

I_DSS

I_GSS

Drain-to-SourceLeakageCurrent

µA

Gate-to-SourceForwardLeakage

Gate-to-SourceReverseLeakage

Total Gate Charge

V_GS= 20V

Q_g

––– 26

I_D= -3.1A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

––– 3.0 4.5

nC V_DS= -44V

V_GS= -10V, See Fig. 10

––– 8.4

––– 14

––– 10

––– 43

––– 22

V_DD= -28V

I_D= -1.0A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.0Ω

R_D= 16Ω,

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 690 –––

––– 210 –––

––– 86 –––

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter

ContinuousSourceCurrent

(BodyDiode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

-2.0

I_SM

Pulsed Source Current

(Body Diode)

integralreverse

––– ––– -1.2

––– 54 80

––– 85 130

-27

p-njunctiondiode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

T_J= 25°C, I_S= -2.0A, V_GS= 0V

T_J= 25°C, I_F= -2.0A

Q_rr

nC di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

I_SD≤ -3.4A, di/dt ≤ -150A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

Starting T_J= 25°C, L = 20mH

Pulse width ≤ 300µs; duty cycle ≤ 2%.

R_G= 25Ω, I_AS= -3.4A. (See Figure 8)

ꢀ When mounted on 1 inch square copper board, t<10 sec

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IRF7342PbF

100

VGS

-15V

-12V

-10V

-8.0V

--64..05VV

-4.0V

-3.5V

VGS

-15V

-12V

-10V

-8.0V

--64..05VV

-4.0V

-3.5V

TOP

BOTTOM -3.0V

-3.0V

20µs PULSE WIDTH

T = 150 C

T = 25 C

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

T = 25 C

T = 150 C

T = 25 C

= -25V

= 0 V

1.2

20µs PULSE WIDTH

0.1

0.2

0.4

0.6

0.8

1.0

1.4

6 7

-V ,Source-to-Drain Voltage (V)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

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IRF7342PbF

2.0

0.240

0.200

0.160

0.120

0.080

-3.4 A

1.5

1.0

0.5

0.0

VGS = -4.5V

VGS = -10V

=-10V

-60 -40 -20

20 40 60 80 100 120 140 160

-I , Drain Current (A)

T , Junction Temperature ( C)

Fig 6. Typical On-Resistance Vs. Drain

Fig 5. Normalized On-Resistance

Current

Vs. Temperature

0.45

300

TOP

-1.5A

-2.7A

250

200

150

100

BOTTOM -3.4A

0.35

0.25

0.15

0.05

= -3.4 A

100

125

150

Starting T , Junction Temperature ( C)

-V_GS, Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate

Fig 8. Maximum Avalanche Energy

Voltage

Vs. Drain Current

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IRF7342PbF

1200

960

720

480

240

= 0V,

f = 1MHz

gd , ds

-3.1A

=-48V

=-30V

=-12V

= C + C

SHORTED

iss

= C

rss

= C + C

oss

iss

oss

rss

100

-V , Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 10. Typical Gate Charge Vs.

Fig 9. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7342PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

.0532

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

0.635 BASIC

e1 .025 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PRINT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].

4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DAT E CODE (YWW)

P = DE S IGNAT E S L E AD-F RE E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WE E K

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A = AS S E MB LY S IT E CODE

LOT CODE

PART NUMBER

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IRF7342PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/04

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