IRF7343QTRPBF [INFINEON]
Transistor,;
| 型号： | IRF7343QTRPBF |
| 厂家： | 
Infineon |
| 描述： | Transistor, 晶体 晶体管 开关 脉冲 光电二极管 局域网 |
| 文件： | 总10页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91709
IRF7343
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
N -C H A N N EL M O S FE T
N-Ch P-Ch
1
8
D 1
D 1
S1
G 1
2
7
VDSS 55V
-55V
3
4
6
5
S2
D 2
D 2
l Fully Avalanche Rated
G 2
P -C H A N N E L M O S F E T
RDS(on) 0.050Ω 0.105Ω
Description
Top View
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
S O -8
Absolute Maximum Ratings
Max.
Parameter
N-Channel
P-Channel
-55
Units
V
VDS
Drain-Source Voltage
55
4.7
3.8
38
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-3.4
A
ID @ TA = 70°C
-2.7
IDM
-27
PD@TA = 25°C
PD@TA = 70°C
Maximum Power Dissipation ꢀ
Maximum Power Dissipation ꢀ
Single Pulse Avalanche Energy
Avalanche Current
2.0
1.3
W
W
EAS
72
114
-3.4
mJ
A
IAR
4.7
EAR
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
0.20
± 20
mJ
V
V/ns
°C
VGS
dv/dt
TJ,TSTG
5.0
-5.0
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient ꢀ
Typ.
–––
Max.
62.5
Units
°C/W
RθJA
www.irf.com
1
2/24/99
IRF7343
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 4.7A
N-Ch 55
P-Ch -55
—
—
0.059
0.054
—
—
—
—
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
N-Ch
P-Ch
—
—
—
—
—
—
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
N-Ch
P-Ch
V
GS = 4.5V, ID = 3.8A
VGS = -10V, ID = -3.4A
GS = -4.5V, ID = -2.7A
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
V
N-Ch 1.0
P-Ch -1.0
N-Ch 7.9
P-Ch 3.3
—
—
—
—
—
—
—
—
—
24
26
2.3 3.4
3.0 4.5
7.0 10
8.4 13
8.3 12
—
—
—
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = 10V, ID = 4.5A
ForwardTransconductance
—
VDS = -10V, ID = -3.1A
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
2.0
-2.0
25
-25
±100
36
V
V
DS = 55V, VGS = 0V
DS = -55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 55V, VGS = 0V, TJ = 55°C
VDS = -55V, VGS = 0V, TJ = 55°C
VGS = ±20V
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P ––
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
38
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 16Ω
14
3.2 4.8
10
32
43
22
15
48
64
20
32
—
—
—
—
—
—
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0Ω,
13
22
RD = 16Ω
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
740
690
190
210
71
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
86
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
-2.0
38
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
-27
0.70 1.2
-0.80 -1.2
60
54
120 170
85 130
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IS = -2.0A, VGS = 0V
V
VSD
trr
90
80
N-Channel
T
ns
nC
Reverse Recovery Time
J = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
J = 25°C, IF = -2.0A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
T
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
2
www.irf.com
IRF7343
N-Channel
100
10
1
100
VGS
15V
VGS
15V
12V
10V
8.0V
4.5V
4.0V
3.5V
TOP
TOP
12V
10V
8.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
3.0V
20µs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
°
°
J
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
10
1
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
V
= 0 V
20µs PULSE WIDTH
GS
0.1
0.2
3
4
5 6
0.5
0.8
1.1
1.4
V
, Gate-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
GS
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
www.irf.com
3
IRF7343
N-Channel
2.5
0.120
4.7A
=
I
D
2.0
1.5
1.0
0.5
0.0
0.100
0.080
0.060
0.040
VGS = 4.5V
VGS = 10V
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
I
20
30
40
T , Junction Temperature ( C)
J
, Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
0.04
200
I
D
TOP
2.1A
3.8A
BOTTOM 4.7A
160
120
80
40
0
I
= 4.7A
D
A
25
50
75
100
125
150
0
2
4
6
8
10
°
Starting T , Junction Temperature ( C)
J
V G S , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
www.irf.com
IRF7343
N-Channel
1200
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I =
4.5A
D
C
= C + C
iss
gs
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
C
oss
4
rss
0
0
10
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7343
P-Channel
100
100
VGS
VGS
-15V
-12V
-10V
-8.0V
TOP
TOP
-15V
-12V
-10V
-8.0V
-4.5V
-4.5V
-4.0V
-3.5V
BOTTOM -3.0V
BOTTOM -3.0V
10
10
-3.0V
-3.0V
1
1
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
10
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -25V
DS
V
= 0 V
GS
1.2
20µs PULSE WIDTH
0.1
0.2
1
0.4
0.6
0.8
1.0
1.4
3
4
5
6 7
-V ,Source-to-Drain Voltage (V)
SD
-V , Gate-to-Source Voltage (V)
GS
Fig 14. Typical Transfer Characteristics
Fig 15. Typical Source-Drain Diode
ForwardVoltage
6
www.irf.com
IRF7343
P-Channel
2.0
1.5
1.0
0.5
0.0
0.240
-3.4 A
=
I
D
0.200
0.160
0.120
0.080
VGS = -4.5V
VGS = -10V
V
= -10V
GS
0
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-I , Drain Current (A)
T , Junction Temperature ( C)
J
D
Fig 17. Typical On-Resistance Vs. Drain
Fig 16. Normalized On-Resistance
Current
Vs.Temperature
0.45
300
I
D
TOP
-1.5A
-2.7A
BOTTOM -3.4A
250
200
150
100
50
0.35
0.25
0.15
0.05
I
= -3.4 A
D
0
A
25
50
75
100
125
150
2
5
8
11
14
°
Starting T , Junction Temperature ( C)
J
-V G S , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Fig 19. Maximum Avalanche Energy
Voltage
Vs. DrainCurrent
www.irf.com
7
IRF7343
P-Channel
1200
20
16
12
8
V
GS
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= -3.1A
V
V
V
=-48V
=-30V
=-12V
C
= C + C
DS
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
960
720
480
240
0
oss
ds
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 21. Typical Gate Charge Vs.
Fig 20. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig22. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
8
www.irf.com
IRF7343
Package Outline
SO8 Outline
INCHES
MILLIMETERS
DIM
D
MIN
MAX
.0688
.0098
.018
MIN
1.35
0.10
0.36
0.19
4.80
MAX
1.75
0.25
0.46
0.25
4.98
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
-
-
0.25 (.010)
M
A M
C
D
E
.0075
.189
.0098
.196
.150
.157
3.81
3.99
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
-
C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION INCH.
0.72 (.028
8X
)
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
(
.255
)
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
DATE CODE (YW W )
LAST DIGIT OF THE YEAR
W EEK
Y
=
W W
=
312
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
W AFER
LOT CODE
PART NUMBER
TOP
(LAST
4 DIGITS)
BOTTOM
www.irf.com
9
IRF7343
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TER M IN AL N U M BE R
1
12.3 ( .484
11.7 ( .461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED D IRE C TIO N
N O TES :
1 . C O N TR O L LIN G D IM EN SIO N : M ILL IM ETER .
2 . A LL D IM EN SIO N S A RE SH O W N IN M ILL IM ETER S(INC H ES).
3 . O UTL IN E C O N FO R M S TO EIA -4 81 & EIA-54 1.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
N O TE S :
1. C O N TR O LLIN G D IM EN SIO N : M ILLIM ETER .
2. O UTLIN E C O N FO RM S TO EIA -481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
2/99
10
www.irf.com
相关型号：
IRF7343TR
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
INFINEON
IRF734STRR
Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
VISHAY
IRF7350TR
Power Field-Effect Transistor, 2.1A I(D), 100V, 0.21ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
IRF7350TRPBF
Power Field-Effect Transistor, 2.1A I(D), 100V, 0.21ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS AND REACH COMPLIANT, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明