IRF7379PBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET


型号：	IRF7379PBF
厂家：	Infineon
描述：	HEXFET㈢ Power MOSFET HEXFET㈢功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
文件：	总10页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95300

IRF7379PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Complimentary Half Bridge

l Surface Mount

l Fully Avalanche Rated

l Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS30V

-30V

P-CHANNEL MOSFET

R_DS(on)0.045Ω 0.090Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

SO-8

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

-30

V_SD

Drain-to-Source Voltage

5.8

4.6

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

-4.3

-3.4

-34

P_D@T_A= 25°C

2.5

W/°C

Linear Derating Factor

0.02

± 20

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

5.0

-5.0

V/ns

°C

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance Ratings

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

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10/7/04

IRF7379PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

N-Ch 30

P-Ch -30

—

V_GS= 0V, I_D= 250µA

V_GS= 0V, I_D= -250µA

Reference to 25°C, I_D= 1mA

Reference to 25°C, I_D= -1mA

V_(BR)DSS

Drain-to-SourceBreakdownVoltage

N-Ch

P-Ch

—

0.032

-0.037

0.038 0.045

0.055 0.075

0.070 0.090

0.130 0.180

—

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

V/°C

V_GS= 10V, I_D= 5.8A

_GS= 4.5V, I_D= 4.9A

N-Ch

P-Ch

R_DS(ON)

Static Drain-to-Source On-Resistance

Ω

V_GS= -10V, I_D=- 4.3A

V_GS= -4.5V, I_D=- 3.7A

V_DS= V_GS, I_D= 250µA

V_DS= V_GS, I_D= -250µA

V_DS= 15V, I_D= 2.4A

V_DS= -24V, I_D= -1.8A

N-Ch 1.0

P-Ch -1.0

N-Ch 5.2

P-Ch 2.5

—

V_GS(th)

g_fs

Gate Threshold Voltage

ForwardTransconductance

—

N-Ch

P-Ch

N-Ch

P-Ch

—

1.0

-1.0

-25

±100

2.9

7.9

9.0

—

_DS= 24 V, V_GS= 0V

V_DS= -24V, V_GS= 0V

V_DS= 24 V, V_GS= 0V, T_J= 125°C

I_DSS

Drain-to-SourceLeakageCurrent

µA

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= ± 20V

I_GSS

Q_g

Gate-to-SourceForwardLeakage

Total Gate Charge

N-P ––

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-P

—

N-Channel

I_D= 2.4A, V_DS= 24V, V_GS= 10V

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-SourceCharge

Gate-to-Drain("Miller")Charge

Turn-OnDelayTime

RiseTime

—

P-Channel

I_D= -1.8A, V_DS= -24V, V_GS= -10V

6.8

7.7

4.0

6.0

520

440

180

200

N-Channel

V_DD= 15V, I_D= 2.4A, R_G= 6.0Ω,

R_D= 6.2Ω

t_d(off)

t_f

Turn-OffDelayTime

FallTime

P-Channel

V_DD= -15V, I_D= -1.8A, R_G= 6.0Ω,

R_D= 8.2Ω

L_D

L_S

Internal Drain Inductace

Internal Source Inductance

Between lead, 6mm (0.25in.) from

package and center of die contact

N-P

—

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

C_iss

C_oss

C_rss

Input Capacitance

N-Channel

V_GS= 0V, V_DS= 25V, ƒ = 1.0MHz

Output Capacitance

P-Channel

V_GS= 0V, V_DS= -25V, ƒ = 1.0MHz

Reverse Transfer Capacitance

Source-Drain Ratings and Characteristics

Parameter

N-Ch

Min. Typ. Max. Units

Conditions

—

3.1

-3.1

-34

1.0

-1.0

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

DiodeForwardVoltage

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

I_SM

V_SD

T_J= 25°C, I_S= 1.8A, V_GS= 0V

T_J= 25°C, I_S= -1.8A, V_GS= 0V

N-Channel

t_rr

ReverseRecoveryTime

T_J= 25°C, I_F= 2.4A, di/dt = 100A/µs

P-Channel

Q_rr

ReverseRecoveryCharge

T_J= 25°C, I_F= -1.8A, di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 10 )

N-Channel I_SD≤ 2.4A, di/dt ≤ 73A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

P-Channel I_SD≤ -1.8A, di/dt ≤ 90A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

Surface mounted on FR-4 board, t ≤ 10sec.

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IRF7379PbF

N-Channel

1000

100

VGS

15V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

4.5V

20µs PULSE WIDTH

= 25°C

= 150°C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

T = 25°C

T = 150°C

T = 25°C

V_DS= 15V

20µs PULSE WIDTH

= 0V

0.1

₁₀A

0.0

0.5

1.0

1.5

2.0

2.5

, Source-to-Drain Voltage (V)

V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

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IRF7379PbF

N-Channel

2.0

0.20

= 4.0A

0.16

0.12

0.08

0.04

0.00

1.5

1.0

0.5

0.0

VGS = 4.5V

VGS = 10V

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160

, Drain Current (A)

T , Junction Temperature (°C)

Fig 6. Typical On-Resistance Vs. Drain

Fig 5. Normalized On-Resistance

Current

Vs.Temperature

0.08

0.07

0.06

0.05

0.04

0.03

ID = 5.8A

, Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate

Voltage

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IRF7379PbF

N-Channel

1000

800

600

400

200

= 0V,

f = 1MHz

= 2.4A

= 24V

iss

rss

oss

= C + C

SHORTED

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 11

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 8. Typical Capacitance Vs.

Fig 9. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

Notes:

1. Duty factor D =

2. Peak T =P

SINGLE PULSE

t / t

x Z

(THERMAL RESPONSE)

+ T

thJA

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7379PbF

P-Channel

100

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

BOTTOM - 4.5V

-4.5V

20µs PULSE WIDTH

= 25°C

= 150°C

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 11. Typical Output Characteristics

Fig 12. Typical Output Characteristics

100

T_J= 25°C

T_J= 150°C

T = 150°C

T = 25°C

V_DS= -15V

20µs PULSE WIDTH

= 0V

0.1

₁₀A

0.0

0.3

0.6

0.9

1.2

1.5

-V_GS, Gate-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 13. Typical Transfer Characteristics

Fig 14. Typical Source-Drain Diode

Forward Voltage

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IRF7379PbF

P-Channel

0.50

0.40

0.30

0.20

0.10

0.00

2.0

1.5

1.0

0.5

0.0

= -3.0A

VGS = -4.5V

VGS = -10V

= -10V

-60 -40 -20

20 40 60 80 100 120 140 160

-I , Drain Current (A)

, Junction Temperature (°C)

Fig 16. Typical On-Resistance Vs. Drain

Fig 15. Normalized On-Resistance

Current

Vs.Temperature

0.16

0.14

0.12

0.10

0.08

0.06

ID = -4.3A

-V

, Gate-to-Source Voltage (V)

Fig 17. Typical On-Resistance Vs. Gate

Voltage

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IRF7379PbF

P-Channel

1000

= -3.0A

= -24V

= 0V,

f = 1MHz

iss

rss

oss

= C + C

SHORTED

= C

= C + C

800

600

400

200

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 22

100

Q , Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 19. Typical Gate Charge Vs.

Fig 18. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

Notes:

1. Duty factor D =

2. Peak T =P

SINGLE PULSE

t / t

x Z

(THERMAL RESPONSE)

+ T

thJA

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7379PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

.0532

A1 .0040

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

0.635 BASIC

e1 .025 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PRINT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].

4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DAT E CODE (YWW)

P = DE S IGNAT E S L E AD-F RE E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WE E K

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A = AS S E MB LY S IT E CODE

LOT CODE

PART NUMBER

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IRF7379PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/04

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IRF7379PBF [INFINEON]

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