IRF7389 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET![IRF7389](http://pdffile.icpdf.com/pdf1/p00077/img/icpdf/IRF7389_407200_icpdf.jpg)
型号: | IRF7389 |
厂家: | ![]() |
描述: | HEXFET Power MOSFET |
文件: | 总10页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
PD - 91645A
IRF7389
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
N-CHANNEL MOSFET
N-Ch P-Ch
1
8
D
D
S1
G1
2
7
VDSS 30V
-30V
3
4
6
5
S2
G2
D
D
l Fully Avalanche Rated
P-CHANNEL MOSFET
RDS(on) 0.029Ω 0.058Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Units
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
-30
± 20
TA = 25°C
TA = 70°C
7.3
5.9
30
-5.3
-4.2
-30
Continuous Drain Currentꢀ
A
Pulsed Drain Current
IDM
IS
Continuous Source Current (Diode Conduction)
2.5
-2.5
TA = 25°C
TA = 70°C
2.5
1.6
Maximum Power Dissipation ꢀ
W
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
82
140
-2.8
mJ
A
4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
mJ
dv/dt
TJ,TSTG
3.8
-2.2
V/ ns
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient ꢀ
RθJA
50
°C/W
www.irf.com
1
02/25/04
IRF7389
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.6A
N-Ch 30
P-Ch -30
0.022
0.022
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
N-Ch
P-Ch
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
0.023 0.029
0.032 0.046
0.042 0.058
0.076 0.098
N-Ch
P-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
N-Ch 1.0
P-Ch -1.0
14
7.7
22
23
2.6 3.9
3.8 5.7
6.4 9.6
5.9 8.9
8.1 12
V
DS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 5.8A
VGS(th)
gfs
Gate Threshold Voltage
V
S
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
ForwardTransconductance
VDS = -15V, ID = -4.9A
VDS = 24V, VGS = 0V
V
1.0
-1.0
25V
-25V
±100
33
DS = -24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 55°C
DS = -24V, VGS = 0V, TJ = 55°C
IDSS
Drain-to-Source Leakage Current
µA
nA
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P
VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
ID = 5.8A, VDS = 15V, VGS = 10V
34
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
ID = -4.9A, VDS = -15V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
RD = 15Ω
13
8.9 13
13
26
34
19
20
39
51
26
48
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
VDD = -15V, ID = -1.0A, RG = 6.0Ω,
17
32
RD = 15Ω
N-Channel
VGS = 0V, VDS = 25V, = 1.0MHz
650
710
320
380
130
180
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-Channel
VGS = 0V, VDS = -25V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
2.5
-2.5
30
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
-30
0.78 1.0
-0.78 -1.0
4568
44
58
42
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IS = -1.7A, VGS = 0V
V
VSD
trr
N-Channel
ns
nC
Reverse Recovery Time
66
87
63
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
P-Channel
Qrr
Reverse Recovery Charge
TJ = 25°C, IF = -1.7A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 22 )
N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
2
www.irf.com
IRF7389
N-Channel
100
10
1
100
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
10
1
T = 25°C
J
TJ = 150°C
T = 150°C
J
10
T = 25°C
J
VDS = 10V
20µs PULSE WIDTH
5.0A
V
GS
= 0V
A
1
3.0
3.5
4.0
4.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
www.irf.com
3
IRF7389
N-Channel
0.040
2.0
5.8A
=
I
D
V
= 4.5V
GS
0.036
0.032
0.028
0.024
0.020
1.5
1.0
0.5
0.0
V
= 10V
GS
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
200
0.12
0.10
0.08
0.06
0.04
0.02
0.00
I
D
TOP
1.8A
3.2A
BOTTOM 4.0A
160
120
80
40
0
I
= 5.8A
D
A
150
A
0
3
6
9
12
15
25
50
75
100
125
Starting T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
www.irf.com
IRF7389
N-Channel
20
1200
900
600
300
0
I
D
= 5.8A
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
V
= 15V
DS
= C
gd
= C + C
16
12
8
ds
gd
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7389
P-Channel
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
TOP
TOP
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
10
10
-3.0V
-3.0V
20µs PULSE WIDTH
TJ = 150°C
20µs PULSE WIDTH
TJ = 25°C
A
A
1
1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
10
1
100
TJ = 25°C
T = 150°C
J
T = 150°C
J
10
T = 25°C
J
VDS = -10V
20µs PULSE WIDTH
V
= 0V
GS
A
1
6.0A
3.0
3.5
4.0
4.5
5.0
5.5
0.4
0.6
0.8
1.0
1.2
1.4
-V , Source-to-Drain Voltage (V)
-VGS , Gate-to-Source Voltage (V)
SD
Fig 14. Typical Transfer Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
6
www.irf.com
IRF7389
P-Channel
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
4.9A
=
I
D
V
= -4.5V
GS
V
= -10V
GS
V
=10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
T , Junction Temperature ( C)
J
-ID , Drain Current (A)
Fig 17. Typical On-Resistance Vs. Drain
Fig 16. Normalized On-Resistance
Current
Vs.Temperature
0.16
0.12
0.08
0.04
0.00
300
I
D
TOP
-1.3A
-2.2A
BOTTOM -2.8A
250
200
150
100
50
I
= -4.9A
D
0
A
25
50
75
100
125
150
0
3
6
9
12
15
°
Starting T , Junction Temperature ( C)
-VGS , Gate -to-Source Voltage (V)
J
Fig 18. Typical On-Resistance Vs. Gate
Fig 19. Maximum Avalanche Energy
Voltage
Vs. Drain Current
www.irf.com
7
IRF7389
P-Channel
1400
20
VGS = 0V
f = 1 MHz
I
D
= -4.9A
Ciss = Cgs + Cgd + Cds
Crss = Cgd
SHORTED
V
=-15V
DS
1200
1000
800
600
400
200
0
Coss = Cds + Cgd
16
12
8
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
-
DS
Fig 21. Typical Gate Charge Vs.
Fig 20. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig22. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
8
www.irf.com
IRF7389
Package Outline
SO8 Outline
INCHES
MIN MAX
.0532 .0688 1.35
MILLIMETERS
DIM
A
D
- B -
MIN
MAX
1.75
0.25
0.46
0.25
4.98
3.99
5
A1 .0040 .0098 0.10
8
1
7
2
6
3
5
4
5
B
C
D
E
e
.014
.018
0.36
H
E
- A -
0.25 (.010)
M
A M
.0075 .0098 0.19
.189
.150
.196
.157
4.80
3.81
e
.050 BASIC
.025 BASIC
.2284 .2440
1.27 BASIC
0.635 BASIC
5.80 6.20
K x 45°
6X
e1
e1
H
K
L
θ
A
.011
0.16
0°
.019
.050
8°
0.28
0.41 1.27
0° 8°
0.48
- C -
0.10 (.004)
6
C
8X
L
8X
A1
C A S B S
B 8X
0.25 (.010)
θ
M
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
312
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
WAFER
100
LOT CODE
PART NUMBER
TOP
(LAST 4 DIGITS)
BOTTOM
www.irf.com
9
IRF7389
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/04
10
www.irf.com
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IRF7389PBF-1_1383782_files/IRF7389PBF-1_1383782_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IRF7389PBF-1_1383782_files/IRF7389PBF-1_1383782_2.jpg)
IRF7389PBF-1
Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00284/img/page/IRF610_1698900_files/IRF610_1698900_1.jpg)
IRF740
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明