IRF7403_04 [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRF7403_04
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总9页 (文件大小：231K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95301

IRF7403PbF

HEXFET^®Power MOSFET

^lGeneration V Technology

l Ultra Low On-Resistance

l N-ChannelMosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 30V

_DS(on)= 0.022Ω

l Lead-Free

Top View

Description

Fifth GenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combinedwiththefastswitchingspeedandruggedizeddevicedesignthat

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in

an application with dramatically reduced board space. The package is designed

for vapor phase, infra red, or wave soldering techniques. Power dissipation of

greater than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

10 Sec. Pulsed Drain Current, V_GS

Continuous Drain Current, V_GS

Pulsed Drain Current

Max.

Units

10V9.7

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10V8.5

10V5.4

2.5

_D@T_A= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.02

±20

5.0

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

9/30/04

IRF7403PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

0.024 V/°C Reference to 25°C, I_D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

0.022

0.035

1.0

8.4

1.0

100

-100

6.8

V_GS= 10V, I_D= 4.0A

_GS= 4.5V, I_D= 3.4A

R_DS(ON)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

V_DS= V_GS, I_D= 250µA

V_DS= 15V, I_D= 4.0A

Forward Transconductance

_DS= 24V, V_GS= 0V

V_DS= 24V, V_GS= 0V, T_J= 125°C

V_GS= 20V

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -20V

I_D= 4.0A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 24V

V_GS= 10V, See Fig. 6 and 12

V_DD= 15V

I_D= 4.0A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.0Ω

R_D= 3.7Ω, See Fig. 10

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

2.5

4.0

Between lead tip

and center of die contact

C_iss

C_oss

C_rss

Input Capacitance

1200

450

160

V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

3.1

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

1.0

52 78

93 140

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

T_J= 25°C, I_S= 2.0A, V_GS= 0V

T_J= 25°C, I_F= 4.0A

Q_rr

t_on

di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

I_SD≤ 4.0A, di/dt ≤ 180A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

Surface mounted on FR-4 board, t ≤ 10sec.

IRF7403PbF

1000

100

1000

100

VGS

15V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

= 150°C

= 25°C

100

0.01

100

0.1

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

1.5

1.0

0.5

0.0

1000

100

= 6.7A

T = 25 C

T = 150 C

= 50V

15V

20µs PULSE WIDTH

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7403PbF

2400

= 0V,

f = 1MHz

= 4.0A

= 24V

iss

rss

oss

= C + C

SHORTED

= C

2000

1600

1200

800

400

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 12

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100us

T = 25°C

T = 150°C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0V

2.5

0.1

100

0.0

0.5

1.0

1.5

2.0

3.0

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

IRF7403PbF

R_D

V_DS

V_GS

10.0

8.0

6.0

4.0

2.0

0.0

D.U.T.

R_G

⁺V_DD

10 V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

100

125

150

, Case Temperature ( C)

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Ambient Temperature

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7403PbF

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

12V

10 V

D.U.T.

3mA

Current Sampling Resistors

Charge

Fig 12a. Basic Gate Charge Waveform

Fig 12b. Gate Charge Test Circuit

IRF7403PbF

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 13. For N-Channel HEXFETS

IRF7403PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

INCHES

MIN MAX

.0532 .0688

MILLIMETERS

DIM

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040 .0098

.013

.0075 .0098

.189 .1968

.020

0.25 [.010]

.1497 .1574

.050 BASIC

1.27 BASIC

e1 .025 BASIC

0.635 BASIC

.2284 .2440

.0099 .0196

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

.016

0°

.050

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PR INT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DAT E CODE (YWW)

P = DE S IGNAT E S L E AD-F RE E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WE E K

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A = AS S E MB LY S IT E CODE

LOT CODE

PART NUMBER

IRF7403PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/04

相关型号：