IRF7404PBF-1_15 [INFINEON]

Industry-standard pinout SO-8 Package;


型号：	IRF7404PBF-1_15
厂家：	Infineon
描述：	Industry-standard pinout SO-8 Package
文件：	总10页 (文件大小：240K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7404TRPbF-1

HEXFET^®Power MOSFET

V_DS

-20

0.04

R_{DS(on) max}

(@V_GS= -4.5V)

Q_g

I_D

-6.7

(@T_A= 25°C)

Top View

SO-8

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tape and Reel

Base Part Number

Package Type

Orderable Part Number

IRF7404TRPbF-1

Quantity

4000

IRF7404PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

-7.7

-6.7

-5.4

-27

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ -4.5V

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

± 12

-5.0

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

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IRF7404TRPbF-1

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-20

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, ID = -250µA

ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient

-0.012 V/°C Reference to 25°C, I_D= -1mA

0.040

0.060

-0.70

6.8

-1.0

V_GS= -4.5V, I_D= -3.2A

R_DS(ON)

Static Drain-to-Source On-Resistance

V_GS= -2.7V, I_D= -2.7A

V_DS= V_GS, I_D= -250µA

SV_DS= -15V, I_D= -3.2A

V_DS= -16V, V_GS= 0V

V_GS(th)

g_fs

Gate Threshold Voltage

Forward

Transconductance

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

-25

-100

100

5.5

100

V_DS= -16V, V_GS= 0V, T_J= 125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -12V

V_GS= 12V

I_D= -3.2A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= -16V

V_GS= -4.5V, See Fig. 6 and 12

V_DD= -10V

I_D= -3.2A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.0Ω

R_D= 3.1Ω, See Fig. 10

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

2.5

4.0

Between lead tip

and center of die contact

C_iss

C_oss

C_rss

Input Capacitance

1500

730

340

V_GS= 0V

Output Capacitance

V_DS= -15V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

-3.1

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

-27

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

-1.0

69 100

71 110

T_J= 25°C, I_S= -2.0A, V_GS= 0V

T_J= 25°C, I_F= -3.2A

Q_rr

t_on

µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

I_SD≤ -3.2A, di/dt ≤ -65A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

Surface mounted on FR-4 board, t ≤ 10sec.

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October 16, 2014

IRF7404TRPbF-1

1000

100

1000

100

VGS

- 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

TOP

- 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

TOP

BOTTOM - 1.5V

-1.5V

20μs PULSE WIDTH

= 150°C

= 25°C

100

0.1

0.01

0.1

0.01

0.1

100

0.1

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

100

= -5.3A

T = 25°C

1.5

1.0

0.5

0.0

T_J= 150°C

V_DS= -15V

20μs PULSE WIDTH

= -4.5V

_5.0A

-60 -40 -20

20 40 60 80 100 120 140 160

1.5

2.0

2.5

3.0

3.5

4.0

4.5

T , Junction Temperature (°C)

-V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF7404TRPbF-1

3000

2000

1000

= -3.2A

= 0V,

f = 1MHz

iss

rss

oss

= -16V

= C + C

SHORTED

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 12

100

, Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150°C

T = 25°C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0V

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-V , Drain-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRF7404TRPbF-1

8.0

6.0

4.0

2.0

0.0

R_D

V_DS

D.U.T.

V_GS

R_G

₊^-V_DD

-4.5V

≤

Pulse Width 1μs

≤

Duty Factor 0.1%

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7404TRPbF-1

Current Regulator

Same Type as D.U.T.

50KΩ

.2μF

.3μF

12V

-4.5 V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 12b. Gate Charge Test Circuit

Fig 12a. Basic Gate Charge Waveform

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IRF7404TRPbF-1

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D =

P.W.

=10V

[

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

[

]

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

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IRF7404TRPbF-1

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

.0532

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

0.635 BASIC

e1 .025 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PRINT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].

4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DATE CODE (YWW)

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WEEK

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A = AS S E MB LY S IT E CODE

LOT CODE

PART NUMBER

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRF7404TRPbF-1

SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRF7404TRPbF-1

Qualification information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

SO-8

(per JEDEC J-S TD-020D^††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

Revision History

Date

Comments

•

Corrected part number from" IRF7404PbF-1" to "IRF7404TRPbF-1" -all pages

Removed the "IRF7404PbF-1" bulk part number from ordering information on page1

10/16/2014

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

TocontactInternationalRectifier, pleasevisithttp://www.irf.com/whoto-call/

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October 16, 2014

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