IRF7404TRPBF [INFINEON]

generation v technology; 第五代技术


型号：	IRF7404TRPBF
厂家：	Infineon
描述：	generation v technology 第五代技术晶体晶体管功率场效应晶体管光电二极管 PC
文件：	总10页 (文件大小：237K)
中文：	中文翻译
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PD - 95203

IRF7404PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel Mosfet

l Surface Mount

V_DSS= -20V

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

R_DS(on)= 0.040Ω

Top View

l Lead-Free

Description

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

10 Sec. Pulsed Drain Current, V_GS@ -4.5V

Max.

-7.7

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-6.7

-5.4

-27

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.irf.com

9/30/04

IRF7404PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-20

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, ID = -250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

-0.012 V/°C Reference to 25°C, I_D= -1mA

0.040

0.060

-0.70

6.8

-1.0

-25

-100

100

5.5

100

V_GS= -4.5V, I_D= -3.2A

R_DS(ON)

Static Drain-to-Source On-Resistance

Ω

V_GS= -2.7V, I_D= -2.7A

V_DS= V_GS, I_D= -250µA

V_DS= -15V, I_D= -3.2A

V_DS= -16V, V_GS= 0V

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

_DS= -16V, V_GS= 0V, T_J= 125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -12V

V_GS= 12V

I_D= -3.2A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= -16V

V_GS= -4.5V, See Fig. 6 and 12

V_DD= -10V

I_D= -3.2A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.0Ω

R_D= 3.1Ω, See Fig. 10

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

2.5

4.0

Between lead tip

and center of die contact

C_iss

C_oss

C_rss

Input Capacitance

1500

730

340

V_GS= 0V

Output Capacitance

V_DS= -15V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

-3.1

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

-27

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

-1.0

69 100

71 110

T_J= 25°C, I_S= -2.0A, V_GS= 0V

T_J= 25°C, I_F= -3.2A

Q_rr

t_on

µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

I_SD≤ -3.2A, di/dt ≤ -65A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

Surface mounted on FR-4 board, t ≤ 10sec.

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IRF7404PbF

1000

100

1000

100

VGS

- 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

VGS

- 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

TOP

BOTTOM - 1.5V

-1.5V

20µs PULSE WIDTH

= 150°C

= 25°C

100

0.1

0.01

0.1

0.01

0.1

100

0.1

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

100

= -5.3A

T = 25°C

1.5

1.0

0.5

0.0

T_J= 150°C

V_DS= -15V

20µs PULSE WIDTH

= -4.5V

_5.0A

-60 -40 -20

20 40 60 80 100 120 140 160

1.5

2.0

2.5

3.0

3.5

4.0

4.5

T , Junction Temperature (°C)

-V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF7404PbF

3000

= -3.2A

= -16V

= 0V,

f = 1MHz

iss

rss

oss

= C + C

SHORTED

= C

= C + C

iss

2000

1000

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 12

100

, Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150°C

T = 25°C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0V

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-V , Drain-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRF7404PbF

8.0

6.0

4.0

2.0

0.0

R_D

V_DS

D.U.T.

V_GS

R_G

₊^-V_DD

-4.5V

≤

Pulse Width 1µs

≤

Duty Factor 0.1%

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7404PbF

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

12V

-4.5 V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 12b. Gate Charge Test Circuit

Fig 12a. Basic Gate Charge Waveform

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IRF7404PbF

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D =

P.W.

=10V

[

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

[

]

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

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IRF7404PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

INCHES

MIN MAX

.0532 .0688

MILLIMETERS

DIM

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040 .0098

.013

.0075 .0098

.189 .1968

.020

0.25 [.010]

.1497 .1574

.050 BASIC

1.27 BASIC

e1 .025 BASIC

0.635 BASIC

.2284 .2440

.0099 .0196

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

.016

0°

.050

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PR INT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DAT E CODE (YWW)

P = DE S IGNAT E S L E AD-F RE E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WE E K

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A = AS S E MB LY S IT E CODE

LOT CODE

PART NUMBER

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IRF7404PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/04

www.irf.com

Mouser Electronics

Authorized Distributor

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