IRF7406PBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF7406PBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总9页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7406PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = -10V)
Qg (max)
-30
0.045
59
V
Ω
A
1
2
3
4
8
S
S
D
7
D
nC
A
6
S
G
D
ID
5
D
-5.8
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tube/Bulk
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF7406PbF-1
IRF7406TRPbF-1
IRF7406PbF-1
SO-8
Tape and Reel
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
10 Sec. Pulsed Drain Current, VGS @ -10V
-6.7
-5.8
-3.7
-23
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
A
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 20
-5.0
VGS
Gate-to-Source Voltage
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
1
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IRF7406PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient -0.020 V/°C Reference to 25°C, ID = -1mA
0.045
0.070
-1.0
3.1
-1.0
-25
-100
100
59
VGS = -10V, ID = -2.8A
VGS = -4.5V, ID = -2.4A
VDS = VGS, ID = -250µA
VDS = -15V, ID = -2.8A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID = -2.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source
Charge
5.7nC VDS = -2.4V
21 VGS = -10V, See Fig. 6 and 12
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
RiseTime
16
33
45
47
VDD = -15V
ID = -2.8A
ns
td(off)
tf
Turn-Off Delay Time
RG = 6.0Ω
RD = 5.3Ω, See Fig. 10
Fall
Time
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
2.5
4.0
Between lead tip
nH
pF
G
and center of die contact
Ciss
Coss
Crss
Input Capacitance
1100
490
220
VGS = 0V
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
S
IS
-3.1
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-23
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-1.0
V
TJ = 25°C, IS = -2.0A, VGS = 0V
42
64
63
96
ns
TJ = 25°C, IF = -2.8A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ -2.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
2
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November 18, 2013
IRF7406PbF-1
1000
100
10
1000
100
10
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
-4.5V
-4.5V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
1
1
0.1
A
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
0.0
I
= -4.7A
D
T = 25°C
J
100
TJ = 150°C
VDS = -15V
20μs PULSE WIDTH
V
= -10V
GS
10
A
10 A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
3
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November 18, 2013
IRF7406PbF-1
2500
2000
1500
1000
500
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
V
= -2.8A
D
DS
GS
iss
rss
oss
= C + C
,
C
SHORTED
= -24V
gs
gd
gd
ds
= C
= C + C
ds
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
A
A
1
10
100
0
20
40
60
-V , Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
T = 150°C
J
T = 25°C
J
1ms
10ms
°
T = 25 C
A
J
°
T = 150 C
Single Pulse
V
GS
= 0V
A
0.1
0.1
1
10
100
0.3
0.6
0.9
1.2
-V , Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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November 18, 2013
IRF7406PbF-1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+ VDD
-10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
AmbientTemperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
5
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November 18, 2013
IRF7406PbF-1
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
.3μF
12V
Q
G
-
-10V
V
+
DS
D.U.T.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
6
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November 18, 2013
IRF7406PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig13. ForP-ChannelHEXFETS
7
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November 18, 2013
IRF7406PbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MIL L IME T ER S
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].
4. OUT LINE CONF ORMS T O JE DE C OUT LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
A S U B S T R AT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB L Y S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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November 18, 2013
IRF7406PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
9
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November 18, 2013
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