IRF7406TR [INFINEON]

Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,;


型号：	IRF7406TR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, 开关脉冲光电二极管晶体管
文件：	总9页 (文件大小：199K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91247D

IRF7406

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel Mosfet

V_DSS= -30V

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

R_DS(on)= 0.045Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques. Power dissipation of greater than 0.8W

is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ -10V

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-6.7

-5.8

-3.7

-23

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

Gate-to-Source Voltage

± 20

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

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06/12/03

IRF7406

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-30

Conditions

V_GS= 0V, ID = -250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient -0.020 V/°C Reference to 25°C, I_D= -1mA

0.045

0.070

-1.0

3.1

-1.0

-25

-100

100

5.7

V_GS= -10V, I_D= -2.8A

V_GS= -4.5V, I_D= -2.4A

V_DS= V_GS, I_D= -250µA

V_DS= -15V, I_D= -2.8A

V_DS= -24V, V_GS= 0V

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= -20V

R_DS(ON)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 20V

Q_g

I_D= -2.8A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

nC V_DS= -2.4V

V_GS= -10V, See Fig. 6 and 12

V_DD= -15V

RiseTime

I_D= -2.8A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 6.0Ω

R_D= 5.3Ω, See Fig. 10

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

2.5

4.0

Between lead tip

and center of die contact

C_iss

C_oss

C_rss

Input Capacitance

1100

490

220

V_GS= 0V

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFETsymbol

I_S

-3.1

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

-23

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

-1.0

T_J= 25°C, I_S= -2.0A, V_GS= 0V

T_J= 25°C, I_F= -2.8A

Q_rr

t_on

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

I_SD≤ -2.8A, di/dt ≤ 90A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

Surface mounted on FR-4 board, t ≤ 10sec.

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IRF7406

1000

100

1000

100

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

BOTTOM - 4.5V

-4.5V

20µs PULSE WIDTH

= 25°C

= 150°C

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

1.5

1.0

0.5

0.0

= -4.7A

T = 25°C

100

T_J= 150°C

V_DS= -15V

20µs PULSE WIDTH

= -10V

₁₀A

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

-V_GS, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs.Temperature

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IRF7406

2500

= 0V,

f = 1MHz

= -2.8A

iss

= C + C

SHORTED

= -24V

= C

rss

oss

= C + C

2000

1500

1000

500

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 12

100

-V , Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100us

T = 150°C

T = 25°C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0V

0.1

100

0.3

0.6

0.9

1.2

-V , Drain-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

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IRF7406

6.0

5.0

4.0

3.0

2.0

1.0

0.0

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

-10V

PulseWidth ≤ 1 µs

Duty Factor≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

AmbientTemperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient

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IRF7406

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

12V

-10V

D.U.T.

-3mA

Current Sampling Resistors

Charge

Fig 12a. Basic Gate Charge Waveform

Fig 12b. Gate Charge Test Circuit

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IRF7406

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig13. ForP-ChannelHEXFETS

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IRF7406

Package Outline

SO-8Outline

Dimensions are shown in millimeters (inches)

INCHES

MIN MAX

.0532 .0688 1.35

MILLIMETERS

DIM

MIN

MAX

1.75

0.25

0.46

0.25

4.98

3.99

- B -

A1 .0040 .0098 0.10

.014

.018

0.36

0.25 (.010)

A M

- A -

.0075 .0098 0.19

.189

.150

.196

.157

4.80

3.81

.050 BASIC

.025 BASIC

.2284 .2440

1.27 BASIC

0.635 BASIC

5.80 6.20

K x 45°

.011

0.16

0°

.019

.050

8°

0.28

0.41 1.27

0° 8°

0.48

- C -

0.10 (.004)

0.25 (.010)

M C A S B S

RECOMMENDED FOOTPRINT

NOTES:

0.72 (.028 )

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

6.46 ( .255 )

1.78 (.070)

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

1.27 ( .050 )

Part Marking Information

SO-8

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DATE CODE (YWW)

Y = LAST DIGIT OF THE YEAR

WW = WEEK

YWW

XXXX

F7101

LOT CODE

INTERNATIONAL

RECTIFIER

LOGO

PART NUMBER

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IRF7406

Tape & Reel Information

SO-8

Dimensions are shown in millimeters (inches)

1.85 (.072)

1.65 (.065)

4.10 (.161)

3.90 (.154)

0.35 (.013)

0.25 (.010)

1.60 (.062)

1.50 (.059)

2.05 (.080)

TERMINATION

1.95 (.077)

NUMBER

5.55 (.218)

5.45 (.215)

12.30 (.484)

11.70 (.461)

5.30 (.208)

5.10 (.201)

2.60 (.102)

1.50 (.059)

8.10 (.318)

7.90 (.311)

FEED DIRECTION

2.20 (.086)

2.00 (.079)

6.50 (.255)

6.30 (.248)

15.40 (.607)

11.90 (.469)

13.20 (.519)

12.80 (.504)

50.00

330.00

(1.969)

MIN.

(13.000)

MAX.

18.40 (.724)

MAX

NOTES:

14.40 (.566)

12.40 (.448)

CONFORMS TO EIA-481-1

INCLUDES FLANGE DISTORTION @ OUTER EDGE

DIMENSIONS MEASURED @ HUB

CONTROLLING DIMENSION : METRIC

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 06/03

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