IRF7413GPBF [INFINEON]
Ultra Low On-Resistance;
| 型号： | IRF7413GPBF |
| 厂家： | 
Infineon |
| 描述： | Ultra Low On-Resistance |
| 文件： | 总9页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96250
IRF7413GPbF
HEXFET® Power MOSFET
l GenerationVTechnology
l Ultra Low On-Resistance
l N-ChannelMosfet
l SurfaceMount
l AvailableinTape&Reel
l Dynamicdv/dtRating
l Fast Switching
l 100% RG Tested
l Lead-Free
l Halogen-Free
A
A
D
1
2
3
4
8
S
S
S
G
7
VDSS = 30V
D
6
D
5
D
RDS(on) = 0.011Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
SO-8
Absolute Maximum Ratings
Symbol
Parameter
Drain-to-Source Voltage
Max
Units
VDS
30
± 20
13
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
9.2
58
A
DM
P
@TA = 25°C
Power Dissipation
2.5
W
mW/°C
mJ
D
Linear Derating Factor
Single Pulse Avalanche Energency
0.02
260
E
AS
V/ns
°C
dv/dt
Peak Diode Recovery dv/dt
5.0
J, TSTG
T
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Symbol
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ
–––
Max
20
Units
RθJL
RθJA
°C/W
–––
50
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1
07/10/09
IRF7413GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆
∆
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient
––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
1.0
––– 0.011
––– 0.018
VGS = 10V, ID = 7.3A
VGS = 4.5V, ID = 3.7A
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
–––
–––
–––
–––
3.0
–––
12
V
S
Forward Transconductance
10
VDS = 10V, ID = 3.7A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 30V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
––– -100
VGS = -20V
–––
52
100
79
VGS = 20V
ID = 7.3A
Qg
Qgs
Qgd
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
6.1
16
9.2
23
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
Ω
–––
8.6
50
3.7
–––
–––
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 15V
ID = 7.3A
Ω
ns RG = 6.2
Turn-Off Delay Time
Fall Time
52
Ω,
46
RG = 2.0 See Fig. 10
Ciss
Coss
Crss
Input Capacitance
––– 1800 –––
VGS = 0V
Output Capacitance
–––
–––
680
240
–––
–––
VDS = 25V
pF
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
I
I
–––
–––
3.1
S
A
Pulsed Source Current
integral reverse
–––
–––
58
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
74
1.0
110
300
V
T = 25°C, I = 7.3A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 7.3A
J F
rr
di/dt = 100A/µs
Q
200
nC
rr
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 9.8mH
ꢀ Surface mounted on FR-4 board
RG = 25Ω, IAS =7.3A. (See Figure 12)
Rθ is measured at TJ approximately 90°C
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2
IRF7413GPbF
100
10
1
100
10
1
VGS
VGS
15V
TOP
15V
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
= 150°C
20µs PULSE WIDTH
= 25°C
T
J
T
J
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
I
= 7.3A
D
T = 150°C
J
TJ = 25°C
10
VDS = 10V
20µs PULSE WIDTH
V
= 10V
GS
1
A
4.5A
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF7413GPbF
20
16
12
8
3200
I
= 7.3A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
2800
2400
2000
1600
1200
800
= C
C
C
= C + C
iss
ds
gd
oss
C
rss
4
400
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
A
A
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
J
T = 150°C
J
100us
1ms
°
T = 25 C
C
J
10ms
°
T = 150 C
Single Pulse
V
GS
= 0V
1
0.1
A
1
10
100
0.4
1.2
2.0
2.8
3.6
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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4
IRF7413GPbF
RD
VDS
Q
G
VGS
10V
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7413GPbF
600
500
400
300
200
100
0
I
D
TOP
3.3A
6.0A
15V
BOTTOM 7.3A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
25
50
75
100
125
150
t
Starting T , Junction Temperature ( oC)
p
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
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6
IRF7413GPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
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IRF7413GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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8
IRF7413GPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2009
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9
相关型号：
IRF7413ZGPBF
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
INFINEON
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