IRF7420 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7420 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94278
IRF7420
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
VDSS
-12V
RDS(on) max
14mΩ@VGS = -4.5V -11.5A
ID
17.5mΩ@VGS = -2.5V -9.8A
l Available in Tape & Reel
26mΩ@VGS = -1.8V
-8.1A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievetheextremelylowon-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
A
1
2
8
D
S
S
7
D
3
4
6
S
D
5
G
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Top View
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-11.5
-9.2
A
-46
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.5
W
Power Dissipation
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
±8
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
RθJA
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1
07/11/01
IRF7420
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-12 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 14
––– ––– 17.5
––– ––– 26
-0.4 ––– -0.9
32 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 38 –––
––– 8.1 –––
––– 8.7 –––
VGS = -4.5V, ID = -11.5A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS = -2.5V, ID = -9.8A
VGS = -1.8V, ID = -8.1A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -11.5A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
Forward Transconductance
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
IGSS
VGS = 8V
Qg
ID = -11.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -6V
VGS = -4.5V
––– 8.8
––– 8.8
13
13
VDD = -6V, VGS = -4.5V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 291 437
––– 225 338
––– 3529 –––
––– 1013 –––
––– 656 –––
RD = 6Ω
RG = 6Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
–––
–––
-2.5
-46
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
––– 62
––– 61
93
92
ns
Qrr
µC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7420
100
10
100
10
1
VGS
-7.0V
VGS
TOP
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
BOTTOM -1.0V
1
-1.0V
0.1
0.01
-1.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
-11.5A
=
I
D
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
°
T = 25 C
J
1
V
= -10V
20µs PULSE WIDTH
DS
V
= -4.5V
GS
0.1
0.5
1.0
1.5
2.0 2.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
-V , Gate-to-Source Voltage (V)
GS
°
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7420
6
5
4
3
2
1
0
5500
5000
4500
I
D
=
-11.5A
V
C
= 0V, f = 1 MHZ
= C + C , C
V
V
=-9.6V
=-6V
GS
DS
DS
SHORTED
iss
gs
gd ds
C
C
= C
rss
oss
gd
= C + C
ds
4000
Ciss
3500
gd
3000
2500
2000
Coss
1500
1000
500
0
Crss
0
10
20
30
40
50
1
10
100
Q
, Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7420
12
9
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7420
0.025
0.020
0.015
0.010
0.005
0.08
0.06
0.04
0.02
0
V
= -1.8V
GS
I
= -11.5A
D
V
= -2.5V
GS
V
= -4.5V
40.0
GS
0.0
2.0
4.0
6.0
8.0
0.0
10.0
20.0
30.0
50.0
-V
GS,
Gate -to -Source Voltage (V)
-ID , Drain Current ( A )
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7420
400
350
300
250
200
150
100
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
= -250µA
D
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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7
IRF7420
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
YWW
XXXX
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
F7101
PART NUMBER
8
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IRF7420
Tape and Reel
T E R M IN A L N U M B E R
1
12.3 ( .48 4
11.7 ( .46 1
)
)
8.1 ( .31 8
7.9 ( .31 2
)
)
FE E D D IR E C TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.00
(12.992)
M AX .
14.40 ( .5 66
12.40 ( .4 88
)
)
N O TE S
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .
2. O U TL IN E C O N FO R M S T O E IA -481 E IA -541.
:
&
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/01
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9
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