IRF7465 [INFINEON]

Power MOSFET(Vdss=150V, Id=1.9A); 功率MOSFET （ VDSS = 150V ，ID = 1.9A ）


型号：	IRF7465
厂家：	Infineon
描述：	Power MOSFET(Vdss=150V, Id=1.9A) 功率MOSFET （ VDSS = 150V ，ID = 1.9A ）晶体小信号场效应晶体管开关光电二极管
文件：	总8页 (文件大小：108K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-93896

IRF7465

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

R_DS(on)max

I_D

150V

0.28Ω@V_GS= 10V

1.9A

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top V iew

Absolute Maximum Ratings

Parameter

Max.

1.9

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

1.5

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

7.8

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

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2/8/01

IRF7465

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

150 ––– –––

––– 0.19 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.28

3.0 ––– 5.5

Ω

V_GS= 10V, I_D= 1.14A

V_DS= V_GS, I_D= 250µA

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

V_DS= 150V, V_GS= 0V

I_DSS

Drain-to-Source Leakage Current

µA

V_DS= 120V, V_GS= 0V, T_J= 125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V_GS= 30V

I_GSS

V_GS= -30V

Dynamic @ T_J= 25°C (unless otherwise specified)

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

g_fs

0.75 ––– –––

V_DS= 50V, I_D= 1.14A

I_D= 1.14A

Q_g

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

2.7 4.0

5.0 7.5

7.0 –––

1.2 –––

10 –––

9.0 –––

nC V_DS= 120V

V_GS= 10V

V_DD= 75V

I_D= 1.14A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.0Ω

V_GS= 10V

V_GS= 0V

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

––– 330 –––

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

–––

80 –––

16 –––

V_DS= 25V

ƒ = 1.0MHz

––– 420 –––

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 120V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 120V ꢀ

–––

41 –––

76 –––

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

–––

Max.

Units

E_AS

I_AR

1.9

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

2.3

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

––– ––– 15

––– ––– 1.3

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

T_J= 25°C, I_S= 1.14A, V_GS= 0V

T_J= 25°C, I_F= 1.14A

––– 62

Q_rr

––– 160 240

nC di/dt = 100A/µs

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IRF7465

100

VGS

15V

12V

10V

8.0V

7.5V

7.0V

6.5V

VGS

15V

12V

10V

8.0V

7.5V

7.0V

6.5V

TOP

BOTTOM 6.0V

6.0V

20µs PULSE WIDTH

Tj = 150°C

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.5

1.9A

2.0

1.5

1.0

0.5

0.0

T = 150 C

T = 25 C

= 25V

=10V

20µs PULSE WIDTH

0.1

6.0

7.0

8.0

9.0

10.0

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF7465

10000

1000

100

= 0V,

f = 1 MHZ

I =

1.14A

= C + C

SHORTED

iss

= 120V

= 75V

= 30V

= C

rss

= C + C

oss

Ciss

Coss

Crss

100

1000

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

T = 150 C

100µsec

T = 25 C

1msec

= 25°C

= 150°C

10msec

= 0 V

Single Pulse

0.1

0.4

0.1

0.6

0.8

1.0

100

1000

,Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF7465

2.0

1.5

1.0

0.5

0.0

R_D

V_DS

V_GS

10V

D.U.T.

R_G

⁺V_DD

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Ambient Temperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJA A

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7465

0.40

0.36

0.32

0.28

0.24

0.50

0.45

0.40

0.35

0.30

0.25

0.20

= 10V

= 1.14A

0.20

, Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance Vs. Drain Current

Fig 13. On-Resistance Vs. Gate Voltage

Current Regulator

Same Type as D.U.T.

50KΩ

.3µF

V_GS

.2µF

12V

100

D.U.T.

TOP

0.8A

1.5A

3mA

Charge

BOTTOM 1.9A

Current Sampling Resistors

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

15 V

(B R )D S S

DRIVER

D.U.T

100

125

150

Starting T , Junction Temperature ( C)

20V

0.01

Ω

A S

Fig 15c. Maximum Avalanche Energy

Fig 15a&b. Unclamped Inductive Test circuit

Vs. Drain Current

and Waveforms

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IRF7465

SO-8 Package Details

INC HES

MILLIMETER S

DIM

MIN

M AX

.0688

.0098

.018

MIN

1.35

0.10

0.36

0.19

4.80

3.81

MAX

1.75

0.25

0.46

0.25

4.98

3.99

B -

.0532

.0040

.014

.0075

.189

.0098

.196

0 .25 (.01 0)

A M

.150

.157

.050 BASIC

.025 BASIC

1.27 BASIC

x 4 5°

0.635 BASIC

.2284

.011

0.16

0°

.2440

5.80

0.28

0.41

0°

6.20

0.48

1.27

8°

.019

.050

8°

- C

0.1 0 (.0 04 )

8 X

A 1

8 X

0.2 5 (.010 )

C A S B S

R E C O M M E N D E D F O O T P R IN T

N O T E S :

0.7 2 (.028

)

1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .

2. C O N T R O LL IN G D IM E N S IO N : IN C H .

3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).

4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .

6.46 ( .2 55

)

1.78 (.0 70 )

D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S

M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).

D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O

S U B S TR A TE ..

1 .27

(

.05 0

)

3 X

SO-8 Part Marking

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IRF7465

SO-8 Tape and Reel

TERMINAL NUMBER

12.3

11.7

(

.484

.461

)

8.1 ( .318

7.9 ( .312

)

FEED DIRECTION

N OTES :

1. CO NTRO LLING DIME NSIO N : MILLIMETER .

2. ALL DIMENS ION S ARE SHO W N IN MILL IME TER S(INC HES).

3. OU TL IN E CO N FO RM S TO EIA-481 & EIA-541.

330.00

(12.992)

M AX.

14.40 ( .566

12.40 ( .488

)

NOTES

1. CO NTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORM S TO EIA-481 & EIA-541.

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 400µs; duty cycle ≤ 2%.

max. junction temperature.

When mounted on 1 inch square copper board

Starting T_J= 25°C, L = 22mH

R_G= 25Ω, I_AS= 1.9A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 2/01

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