IRF7468 [INFINEON]
Power MOSFET(Vdss=40V, Id=9.4A); 功率MOSFET （ VDSS = 40V ，ID =输出高达9.4A ）
| 型号： | IRF7468 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=40V, Id=9.4A) |
| 文件： | 总8页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93914D
IRF7468
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
VDSS
40V
RDS(on) max(mΩ)
ID
15.5@VGS = 10V
9.4A
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
A
A
D
1
2
3
4
8
S
S
Benefits
7
D
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
6
S
D
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-to-Source Voltage
± 12
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
9.4
7.5
A
75
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through ꢀare on page 8
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1
3/25/01
IRF7468
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA
––– 11.7 15.5 VGS = 10V, ID = 9.4A
––– 13.0 17.0 mΩ VGS = 4.5V, ID = 7.5A
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 18.0 35.0
0.8 ––– 2.0
VGS = 4.5V, ID = 4.7A
VDS = VGS, ID = 250µA
VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS(th)
IDSS
Gate Threshold Voltage
V
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 20V, ID = 8.0A
ID = 8.0A
27
––– –––
23 34
6.4 9.6
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 20V
VGS = 4.5V,
6.7
17
10
26
VGS = 0V, VDS = 16V
VDD = 20V
7.6 –––
2.3 –––
20 –––
3.8 –––
ID = 8.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2460 –––
––– 490 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 20V
–––
38 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
160
Units
mJ
IAR
Avalanche Current
–––
8.0
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
2.3
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
74
S
––– 0.81 1.3
––– 0.65 –––
V
TJ = 25°C, IS = 8.0A, VGS = 0V
TJ = 125°C, IS = 8.0A, VGS = 0V
TJ = 25°C, IF = 8.0A, VR=20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 45
––– 76 110
––– 58 87
––– 110 160
68
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 8.0A, VR=20V
nC di/dt = 100A/µs
Qrr
2
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IRF7468
1000
100
10
1000
100
10
VGS
15V
10V
4.50V
3.00V
2.70V
2.50V
2.25V
VGS
TOP
TOP
15V
10V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
BOTTOM 2.00V
1
2.0V
2.0V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
10A
=
I
D
°
T = 150 C
J
1.5
1.0
0.5
0.0
10
°
T = 25 C
J
1
V
= 15V
DS
20µs PULSE WIDTH
V
= 4.5V
GS
0.1
2.0
2.4
2.8
3.2 3.6
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7468
10
8
100000
10000
1000
I
D
=
8.0A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
= 32V
= 20V
iss
gs
gd
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
6
Ciss
Coss
4
100
Crss
10
2
10
1
0
0
10
20
30
40
50
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1ms
1
°
T = 25 C
J
°
T = 25 C
A
°
T = 150 C
Single Pulse
10ms
J
V
= 0 V
GS
1
0.1
0.4
1
10
100
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7468
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7468
0.020
0.018
0.016
0.025
0.020
0.015
0.010
V
GS
= 4.5V
0.014
I
= 10A
D
0.012
0.010
V
= 10V
60
GS
2.0
4.0
V
6.0
8.0
10.0
12.0
14.0
16.0
0
20
40
80
100
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
400
DS
D.U.T.
-
V
I
G
D
V
GS
TOP
3.6A
6.4A
BOTTOM 8.0A
3mA
Charge
I
I
D
G
Current Sampling Resistors
300
200
100
0
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
25
50
75
100
125
150
20V
0.01
Ω
t
°
p
Starting T , Junction Temperature ( C)
I
J
A S
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7468
SO-8 Package Details
INC HES
M ILLIM ETER S
DIM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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7
IRF7468
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 5.0mH
RG = 25Ω, IAS = 8.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
8
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