IRF7470TR [INFINEON]
Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8;
| 型号： | IRF7470TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 局域网 |
| 文件： | 总8页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93913C
IRF7470
SMPS MOSFET
Applications
HEXFET® Power MOSFET
l High Frequency DC-DC Converters
VDSS
RDS(on) max
ID
with Synchronous Rectification
40V
13mΩ
10A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
A
A
D
1
2
3
4
8
7
S
S
l Fully Characterized Avalanche Voltage
D
and Current
6
5
S
D
D
G
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-to-Source Voltage
± 12
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
10
8.5
A
85
2.5
PD @TA = 25°C
PD @TA = 70°C
W
W
1.6
0.02
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
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1
3/25/01
IRF7470
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.8
9.0
10
13
VGS = 10V, ID = 10A
RDS(on)
Static Drain-to-Source On-Resistance
15 mΩ VGS = 4.5V, ID = 8.0A
14.5
–––
–––
–––
–––
–––
30
2.0
VGS = 2.8V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125C
VGS = 12V
VGS(th)
IDSS
Gate Threshold Voltage
V
–––
–––
–––
–––
20
µA
Drain-to-Source Leakage Current
100
200
-200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
27
––– –––
S
VDS = 20V, ID = 8.0A
ID = 8.0A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
29
7.9
8.0
23
44
12
12
35
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 20V
VGS = 4.5V
VGS = 0V, VDS = 16V
VDD = 20V
10 –––
1.9 –––
21 –––
3.2 –––
ID = 8.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3430 –––
––– 690 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 20V
–––
41 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
Max.
300
Units
mJ
IAR
–––
8.0
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
2.3
85
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
––– 0.80 1.3
––– 0.65 –––
––– 72 110
––– 130 200
––– 76 110
––– 150 230
V
TJ = 25°C, IS = 8.0A, VGS = 0V
TJ = 125°C, IS = 8.0A, VGS = 0V
TJ = 25°C, IF = 8.0A, VR= 20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 8.0A, VR=20V
nC di/dt = 100A/µs
Qrr
2
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IRF7470
1000
100
10
100
10
1
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
TOP
TOP
BOTTOM 2.0V
BOTTOM 2.0V
2.0V
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
°
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
10A
=
I
D
°
T = 150 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
10
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
1
2.0
2.2
2.4
2.6 2.8
3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7470
10
8
100000
10000
1000
I
D
= 8.0A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
= 32V
= 20V
iss
gs
gd
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
6
Coss
4
100
2
Crss
10
10
1
0
100
0
10
20
30
40
50
60
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1ms
°
T = 25 C
J
1
°
T = 25 C
A
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.8
1
0.1
0.2
0.1
1
10
100
0.6
1.0
1.4
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7470
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
SINGLE PULSE
0.1
0.01
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7470
0.030
0.025
0.020
0.020
0.018
0.016
0.014
0.012
0.010
I
= 10A
V
= 2.7V
V
D
GS
0.015
0.010
= 4.5V
30
GS
V
= 10V
50
GS
2
4
6
8
10
12
14
16
0
10
20
40
60
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
800
V
DS
D.U.T.
I
-
D
V
G
TOP
3.6A
6.4A
BOTTOM 8.0A
V
GS
3mA
Charge
I
I
D
G
600
400
200
0
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
V
DD
-
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
0.01
Ω
t
p
J
I
A S
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7470
SO-8 Package Details
INC HES
M ILLIM ETER S
DIM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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7
IRF7470
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40
12.40
(
(
.566
.488
)
)
NOTES
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 EIA-541.
:
&
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 9.4mH
RG = 25Ω, IAS = 8.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8
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Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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IRF7473TRPBF
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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