IRF7495TRPBF [INFINEON]
Low Gate to Drain Charge to Reduce Switching Losses; 低栅极到漏极电荷降低开关损耗
| 型号： | IRF7495TRPBF |
| 厂家： | 
Infineon |
| 描述： | Low Gate to Drain Charge to Reduce Switching Losses |
| 文件： | 总8页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95349C
IRF7494PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
150V
RDS(on) max
ID
5.1A
44m @V = 10V
Ω
GS
Benefits
A
A
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
1
2
3
4
8
S
S
D
7
D
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
150
± 20
5.1
Units
VDS
VGS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
I
I
I
@ T = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
D
A
@ T = 70°C
A
4.0
A
40
DM
P
@T = 25°C
A
2.5
W
Maximum Power Dissipation
Linear Derating Factor
D
0.02
33
-55 to + 150
W/°C
V/ns
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
T
J
°C
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
20
Units
Junction-to-Drain Lead
RθJL
RθJA
°C/W
Junction-to-Ambient (PCB Mount)
–––
50
Notes through are on page 8
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1
10/15/09
IRF7494PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
150 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆
V
∆
(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.5
35
44
4.0
VGS = 10V, ID = 3.1A
VDS = VGS, ID = 250µA
mΩ
V
–––
–––
–––
–––
–––
Drain-to-Source Leakage Current
–––
–––
–––
–––
10
µA VDS = 120V, VGS = 0V
250
100
-100
V
DS = 120V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 5.1A
gfs
Qg
12
–––
35
6.4
13
9
–––
S
–––
–––
–––
–––
–––
–––
–––
53
ID = 3.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
nC
VDS = 75V
VGS = 10V
VDD = 75V
ID = 3.1A
10
29
14
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 6.8Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 1783 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
222
104
886
121
189
–––
–––
–––
–––
–––
V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
V
Coss eff.
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
262
3.1
Units
Single Pulse Avalanche Energy
EAS
IAR
mJ
A
Avalanche Current
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
I
Continuous Source Current
MOSFET symbol
S
–––
–––
2.3
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
SM
–––
–––
40
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
45
1.3
–––
–––
V
T = 25°C, I = 3.1A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 3.1A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
93
nC
rr
2
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IRF7494PbF
100
10
100
10
1
VGS
VGS
TOP
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
TOP
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
BOTTOM
BOTTOM
1
4.25V
4.25V
0.1
0.01
≤60µs PULSE WIDTH Tj = 150°C
≤60µs PULSE WIDTH Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
100
10
1
I
= 5.1A
D
V
= 50V
DS
V
= 10V
GS
≤
60µs PULSE WIDTH
T
= 150°C
J
T
= 25°C
J
0.1
-60 -40 -20
0
20 40 60 80 100 120140 160
3.0
3.5
V
4.0
4.5
5.0
5.5
6.0
T
J
, Junction Temperature (°C)
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF7494PbF
14.0
12.0
10.0
8.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I = 3.1A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
V
= 120V
= 75V
rss
oss
gd
DS
= C + C
ds
gd
V
10000
1000
100
DS
VDS= 30V
C
iss
6.0
C
oss
C
4.0
rss
2.0
0.0
10
0
5
10 15 20 25 30 35 40 45
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
1msec
1
T
= 25°C
10msec
A
Tj = 150°C
Single Pulse
V
GS
= 0V
0.1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
, Source-to-Drain Voltage (V)
0
1
10
100
1000
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7494PbF
6
5
4
3
2
1
0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
V
GS
Fig 9. Maximum Drain Current vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7494PbF
100
90
80
70
60
50
40
30
20
50
I
= 5.1A
D
45
T
= 125°C
J
Vgs = 10V
40
35
30
T
= 25°C
J
4
6
8
10 12 14
16 18 20
0
5
10 15 20 25 30 35 40 45
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Q
Q
G
VGS
L
VCC
Q
700
GS
GD
DUT
0
1K
I
V
G
D
600
TOP
1.4A
2.5A
BOTTOM 3.1A
Charge
500
400
300
200
100
0
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
20V
Ω
0.01
t
p
I
AS
Starting T , Junction Temperature (°C)
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
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IRF7494PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7494PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 55mH,
RG = 25Ω, IAS = 3.1A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 3.1A, di/dt ≤ 1907A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
R is measured at TJ of approximately 90°C.
.
θ
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2009
8
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