IRF7702TRPBF [INFINEON]
Ultra Low On-Resistance; 超低导通电阻
| 型号： | IRF7702TRPBF |
| 厂家： | 
Infineon |
| 描述： | Ultra Low On-Resistance |
| 文件： | 总8页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96027
IRF7702PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l -1.8V Rated
VDSS
RDS(on) max
ID
0.014@VGS = -4.5V
0.019@VGS = -2.5V
0.027@VGS = -1.8V
-8.0A
-7.0A
-5.8A
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
l Lead-Free
-12V
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
nationalRectifier iswellknownfor,providesthedesigner
with an extremely efficient and reliable device for
battery and load management.
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
±8.0
±7.0
A
±70
PD @TC = 25°C
PD @TC = 70°C
Power Dissipation
1.5
W
Power Dissipation
0.96
Linear Derating Factor
0.01
W/°C
V
VGS
Gate-to-Source Voltage
± 8.0
-55 to + 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
RθJA
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1
02/06/06
IRF7702PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.014
––– 0.019
––– 0.027
-0.45 ––– -1.2
26 ––– –––
––– ––– 1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -8.0A
VGS = -2.5V, ID = -7.0A
VGS = -1.8V, ID = -5.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -8.0A
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 8.0V
Qg
––– 54
––– 7.8
––– 15
81
12
23
ID = -8.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -9.6V
VGS = -4.5V
––– 16 –––
––– 21 –––
––– 320 –––
––– 250 –––
––– 3470 –––
––– 1040 –––
––– 670 –––
VDD = -6.0V
ns
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RD = 6.0Ω
RG = 6.0Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
-1.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-70
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.5A, VGS = 0V
––– 58
––– 41
87
62
ns
TJ = 25°C, IF = -1.5A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7702PbF
1000
100
10
1000
100
10
VGS
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
BOTTOM-1.50V
-1.50V
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100.00
10.00
1.00
1000
T
= 25°C
J
T
= 150°C
J
100
°
T = 150 C
J
°
T = 25 C
J
V
GS
= 0V
V
= -15V
DS
20µs PULSE WIDTH
10
1.5
2.0
2.5
3.0 3.5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-V , Gate-to-Source Voltage (V)
GS
-V , Source-toDrain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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3
IRF7702PbF
5000
10
8
V
= 0V,
f = 1MHz
gd , ds
I
D
=
-8.0A
GS
C
= C + C
C
SHORTED
iss
gs
V
=-9.6V
DS
C
= C
gd
rss
C
= C + C
ds
4000
3000
2000
1000
0
oss
gd
C
iss
6
4
2
C
oss
rss
C
0
0
20
40
60
80
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
0.80
0.60
0.40
0.20
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
= -250µA
D
100us
1ms
10ms
°
T = 25 C
A
J
°
T = 150 C
Single Pulse
1
0.1
1
10
100
-75 -50 -25
0
25
50
75 100 125 150
-V , Drain-to-Source Voltage (V)
DS
T , Temperature ( °C )
J
Fig 8. Maximum Safe Operating Area
Fig 7. Threshold Voltage Vs. Temperature
4
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IRF7702PbF
8.0
6.0
4.0
2.0
0.0
40
30
20
10
0
25
50
T
75
100
125
°
150
0.01
0.10
1.00
10.00
100.00
, Case Temperature ( C)
C
Time (sec)
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
SINGLE PULSE
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7702PbF
2.0
0.20
0.16
0.12
0.08
0.04
0.00
-8.0A
=
I
D
1.5
1.0
0.5
0.0
V
V
= -2.5V
= -4.5V
GS
GS
V
= -4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
20
40
60
80
100
T , Junction Temperature ( C)
J
-I , Drain Current (A)
D
Fig 12. Normalized On-Resistance
Fig 13. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0.020
I
= -8.0A
D
0.015
0.010
1.5
2.5
3.5
-V
Gate -to -Source Voltage (V)
GS,
Fig 14. Typical On-Resistance Vs. Gate
Voltage
6
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IRF7702PbF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
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7
IRF7702PbF
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
8
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