IRF7751GTRPBF [INFINEON]
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| 型号： | IRF7751GTRPBF |
| 厂家： | 
Infineon |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94002
IRF7751
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
VDSS
-30V
RDS(on) max
35mΩ@VGS = -10V
55mΩ@VGS = -4.5V
ID
-4.5A
-3.8A
l Available in Tape & Reel
Description
8
7
6
5
1
2
3
4
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
1 = D1
2 = S1
3 = S1
4 = G1
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
-30
Units
V
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-4.5
-3.6
A
-18
PD @TC = 25°C
PD @TC = 70°C
Power Dissipation
Power Dissipation
1.0
W
0.64
Linear Derating Factor
0.008
±20
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
RθJA
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1
10/04/2000
IRF7751
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.020 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 35
––– ––– 55
-1.0 ––– -2.5
6.8 ––– –––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -3.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.5A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 29
44
ID = -4.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 5.5 –––
––– 5.0 –––
nC VDS = -15V
VGS = -10V
––– 13
––– 16
20
24
VDD = -15V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 155 233
––– 80 120
––– 1464 –––
––– 227 –––
––– 146 –––
RG = 6.0Ω
VGS = -10V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
––– -1.0
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– -18
––– ––– -1.2
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
TJ = 25°C, IS = -1.0A, VGS = 0V
––– 23
––– 19
35
28
ns
TJ = 25°C, IF = -1.0A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7751
100
10
100
10
1
VGS
VGS
TOP
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
TOP
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.7V
BOTTOM -2.7V
1
-2.7V
-2.7V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-4.5A
=
I
D
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -15V
DS
V
= -10V
20µs PULSE WIDTH
GS
0.1
2.0
3.0
4.0
5.0 6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF7751
4000
14
12
10
8
V
= 0V,
f = 1MHz
gd , ds
I
D
= -4.5A
GS
C
= C + C
C
SHORTED
iss
gs
V
V
=-24V
=-15V
C
= C
gd
DS
DS
rss
C
= C + C
ds
3200
2400
1600
800
0
oss
gd
C
iss
6
4
C
oss
2
C
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
°
T = 150 C
J
10
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7751
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7751
0.100
0.080
0.060
0.040
0.020
0.200
0.150
0.100
0.050
0.000
VGS = -4.5V
I
= -4.5A
D
VGS = -10V
3.0
4.0
-V
5.0
6.0
7.0
8.0
9.0
10.0
0
10
20
30
40
Gate -to -Source Voltage (V)
-I , Drain Current ( A )
GS,
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
-
V
+
DS
10 V
D.U.T.
Q
Q
GD
GS
V
GS
-3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7751
TSSOP-8 Package Outline
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7
IRF7751
TSSOP-8 Tape and Reel Information
Ø 13"
16 mm
16mm
FEED DIRECTION
NOTES:
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.
8 mm
TSSOP-8 Part Marking
EXAMPLE: THIS IS AN IRF7702
DATE CODE (YW)
LOT CODE (XX)
TABLE 1
XXYW
PART NUMBER
7702
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE CODE EXAMPLES :
9503 = 5C
9532 = EF
24
25
26
X
Y
Z
TABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
8
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