IRF7805QPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET型号: | IRF7805QPBF |
厂家: | Infineon |
描述: | HEXFET㈢ Power MOSFET |
文件: | 总5页 (文件大小:233K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD – 96114
IRF7805QPbF
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Advanced Process Technology
UltraLowOn-Resistance
NChannelMOSFET
SurfaceMount
A
D
1
2
3
4
8
7
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
S
S
D
6
5
S
D
D
G
Description
SO-8
Top View
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
Device Features
IRF7805Q
30V
VDS
RDS(on)
Qg
11m
Ω
31nC
Qsw
Qoss
11.5nC
36nC
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
± 12
13
V
V
GS
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
10
A
100
2.5
1.6
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
50
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1
07/23/07
IRF7805QPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A
VDS = VGS, ID = 250µA
Drain-to-Source Breakdown Voltage
BVDSS
RDS(on)
VGS(th)
IDSS
30
–––
9.2
–––
–––
–––
–––
–––
–––
22
–––
V
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
1.0
11
Ω
m
3.0
70
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V
V
DS = 30V, VGS = 0V
10
DS = 24V, VGS = 0V
µA
150
100
-100
31
DS = 24V, VGS = 0V, TJ = 100°C
IGSS
Gate-to-Source Forward Leakage
VGS = 12V
VGS = -12V
nA
nC
Gate-to-Source Reverse Leakage
Total Gate Charge
Qg
VGS = 5.0V
Qgs1
Qgs2
Qgd
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
3.7
1.4
6.8
8.2
3.0
–––
–––
–––
11.5
3.6
VDS = 16V
ID = 7.0A
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
0.5
–––
–––
–––
–––
1.7
–––
–––
–––
–––
Ω
–––
16
V
DD = 16V, VGS = 4.5V
20
38
16
ID = 7.0A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG= 2
Resistive Load
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
2.5
MOSFET symbol
–––
–––
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
ISM
–––
–––
–––
–––
106
1.2
(Body Diode)
Diode Forward Voltage
p-n junction diode.
T = 25°C, I = 7.0A, V = 0V
J S GS
VSD
Qrr
–––
88
V
Reverse Recovery Charge
di/dt = 700A/µs
= 16V, V = 0V, I = 7.0A
–––
ns
V
DS
GS
S
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
55
di/dt = 700A/µs (with 10BQ040)
–––
–––
nC
V
DS
= 16V, V = 0V, I = 7.0A
GS
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
ꢀ
Rθ is measured at T of approximately 90°C.
Devices are 100% tJested to these parameters.
2
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IRF7805QPbF
Typical Characteristics
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
10
°
T = 150 C
J
1
°
T = 25 C
J
V
= 0 V
GS
0.1
0.4
0.5
0.6
0.7
0.8
0.9
V
,Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode Forward Voltage
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
2
DM
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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3
IRF7805QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
4
www.irf.com
IRF7805QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
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