IRF7807PBF-1 [INFINEON]

Industry-standard pinout SO-8 Package;


型号：	IRF7807PBF-1
厂家：	Infineon
描述：	Industry-standard pinout SO-8 Package
文件：	总9页 (文件大小：262K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7807TRPbF-1

IRF7807ATRPbF-1

HEXFET^®Chip-Set for DC-DC Converters

V_DS

8.3

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

(@T_A= 25°C)

Top View

SO-8

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

IRF7807PbF-1

IRF7807APbF-1

Tape and Reel

4000

IRF7807TRPbF-1

IRF7807ATRPbF-1

SO-8

Absolute Maximum Ratings

Parameter

Symbol

V_DS

IRF7807

IRF7807A

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

V_GS

±12

25°C

70°C

I_D

8.3

6.6

8.3

6.6

I_DM

P_D

25°C

70°C

2.5

1.6

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed source Current

T_J, T_STG

I_S

–55 to 150

°C

2.5

I_SM

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

R_θJA

°C/W

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Electrical Characteristics

Parameter

IRF7807

IRF7807A

Min Typ Max Min Typ Max Units

Conditions

Drain-to-Source

V_(BR)DSS30

–

V_GS= 0V, I_D= 250μA

Breakdown Voltage*

Static Drain-Source

on Resistance*

R_DS(on)

25 mΩ V_GS= 4.5V, I_D= 7A

Gate Threshold Voltage* V_GS(th) 1.0

1.0

V_DS= V_GS, I_D= 250μA

Drain-Source Leakage I_DSS

Current*

μA

V_DS= 24V, V_GS= 0

150

V_DS= 24V, V_GS= 0,

Tj = 100°C

Gate-Source Leakage

Current*

I_GSS

±100

±100 nA

V_GS= ±12V

Total Gate Charge*

Q_g

V_GS= 5V, I_D= 7A

V_DS= 16V, I_D= 7A

Pre-Vth

Q_gs1

2.1

Gate-Source Charge

Post-Vth

Gate-Source Charge

Q_gs2

0.76

2.9

0.76

Gate to Drain Charge

Q_gd

2.9

Switch Charge*

(Q_gs2+ Q_gd)

Q_SW

3.66 5.2

3.66

Output Charge*

Gate Resistance

Turn-on DelayTime

Rise Time

Q_oss

R_g

14 16.8

V_DS= 16V, V_GS= 0

1.2

t_d(on)

t_r

V_DD= 16V

I_D= 7A

Turn-off Delay Time

FallTime

t_d(off)

t_f

R_g= 2Ω

V_GS= 4.5V

Resistive Load

Source-Drain Rating & Characteristics

Parameter

Min Typ Max Min Typ Max Units

1.2 1.2

Conditions

Diode Forward

Voltage*

V_SD

Q_rr

I_S= 7A, V_GS= 0V

Reverse Recovery

Charge

nC di/dt = 700A/μs

V_DS= 16V, V_GS= 0V, I_S= 7A

di/dt = 700A/μs

(with 10BQ040)

V_DS= 16V, V_GS= 0V, I_S= 7A

Reverse Recovery

Charge (with Parallel

Schotkky)

Q_rr(s)

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 300 μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board, t < 10 sec.

Typ = measured - Q_oss

Devices are 100% tested to these parameters.

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IRF7807/ATRPbF-1

Power MOSFET Selection for DC/DC

Converters

Control FET

Drain Current

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called the

Control FET, are impacted by the R_ds(on)of the MOSFET,

but these conduction losses are only about one half of

the total losses.

Gate Voltage

V_GTH

Power losses in the control switch Q1 are given by;

P_loss= P_conduction+ P_switching+ P_drive+ P_output

This can be expanded and approximated by;

Drain Voltage

Figure 1: Typical MOSFET switching waveform

Synchronous FET

= I ²× R_ds(on)

(

)

loss

rms

The power loss equation for Q2 is approximated

by;

⎛

Q_gd

i_g

⎞

Q_gs2

i_g

⎞

⎟

⎜

⎟

⎜

+ I ×

× V × f + I ×

× V × f

⎝

⎠

⎝

⎠

P = P

+ P + P^*

loss

conduction

drive

output

+ Q × V × f

(

)

P = I_rms²× R_ds(on)

loss ( )

⎛ Q_oss

⎞

⎠

×V × f

⎝

+ Q × V × f

(

)

This simplified loss equation includes the terms Q_gs2

and Q_osswhich are new to Power MOSFET data sheets.

⎛

⎜

Q_oss

⎞

⎠

×V × f + Q × V × f

(

)

_gs2is a sub element of traditional gate-source charge

⎝ 2

that is included in all MOSFET data sheets. The impor-

tance of splitting this gate-source charge into two sub

elements, Q_gs1and Q_gs2, can be seen from Fig 1.

Q_gs2indicates the charge that must be supplied by

the gate driver between the time that the threshold volt-

age has been reached (t1) and the time the drain cur-

rent rises to I_dmax(t2) at which time the drain voltage

begins to change. Minimizing Q_gs2is a critical factor in

reducing switching losses in Q1.

*dissipated primarily in Q1.

Q_ossis the charge that must be supplied to the output

capacitance of the MOSFET during every switching

cycle. Figure 2 shows how Q_ossis formed by the paral-

lel combination of the voltage dependant (non-linear)

capacitance’s C_dsand C_dgwhen multiplied by the power

supply input buss voltage.

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IRF7807/ATRPbF-1

For the synchronous MOSFET Q2, R_ds(on)is an im-

portant characteristic; however, once again the impor-

tance of gate charge must not be overlooked since it

impacts three critical areas. Under light load the

MOSFET must still be turned on and off by the con-

trol IC so the gate drive losses become much more

significant. Secondly, the output charge Q_ossand re-

verse recovery charge Q_rrboth generate losses that

are transfered to Q1 and increase the dissipation in

that device. Thirdly, gate charge will impact the

MOSFETs’ susceptibility to Cdv/dt turn on.

the MOSFET on, resulting in shoot-through current .

The ratio of Q_gd/Q_gs1must be minimized to reduce the

potential for Cdv/dt turn on.

Spice model for IRF7807 can be downloaded in ma-

chine readable format at www.irf.com.

The drain of Q2 is connected to the switching node

of the converter and therefore sees transitions be-

tween ground and V_in. As Q1 turns on and off there is

a rate of change of drain voltage dV/dt which is ca-

pacitively coupled to the gate of Q2 and can induce

a voltage spike on the gate that is sufficient to turn

Figure 2: Q_ossCharacteristic

Typical Mobile PC Application

The performance of these new devices has been tested

in circuit and correlates well with performance predic-

tions generated by the system models. An advantage

of this new technology platform is that the MOSFETs

it produces are suitable for both control FET and syn-

chronous FET applications. This has been demon-

strated with the 3.3V and 5V converters. (Fig 3 and

Fig 4). In these applications the same MOSFET IRF7807

was used for both the control FET (Q1) and the syn-

chronous FET (Q2). This provides a highly effective

cost/performance solution.

3.3V Supply : Q1=Q2=IRF7807

5V Supply : Q1=Q2=IRF7807

Vin = 10V

Vin = 14V

Vin = 24V

Vin=24V

1.5

2.5

3.5

4.5

1.5

2.5

3.5

4.5

Load Current (A)

Figure 3

Figure 4

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IRF7807/ATRPbF-1

Typical Characteristics

IRF7807

IRF7807A

Figure 5. Normalized On-Resistance vs. Temperature

Figure 6. Normalized On-Resistance vs. Temperature

Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage

Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage

Figure 9. Typical Rds(on) vs. Gate-to-Source Voltage

Figure 10. Typical Rds(on) vs. Gate-to-Source Voltage

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IRF7807/ATRPbF-1

IRF7807

IRF7807A

T = 150 C

T = 25 C

= 0 V

0.8

0.1

0.4

0.1

0.4

0.5

0.6

0.7

0.9

0.5

0.6

0.7

0.9

,Source-to-Drain Voltage (V)

Figure 11. Typical Source-Drain Diode Forward Voltage

Figure 12. Typical Source-Drain Diode Forward Voltage

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJA

0.1

0.001

0.01

0.1

100

1000

t , Rectangular Pulse Duration (sec)

Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7807/ATRPbF-1

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

.0532

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

0.635 BASIC

e1 .025 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PRINT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.

2. CONT ROLLING DIMENS ION: MILLIMET ER

3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.

DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DATE CODE (YWW)

P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WEEK

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A= ASSEMBLY SITE CODE

LOT CODE

PART NUMBER

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRF7807/ATRPbF-1

SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRF7807/ATRPbF-1

Qualification information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

SO-8

(per JEDEC J-STD-020D^††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

Revision History

Date

Comments

•

Corrected part number from" IRF7807/APbF-1" to "IRF7807/ATRPbF-1" -all pages

Removed the "IRF7807/APbF-1" bulk part number from ordering information on page1

10/16/2014

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

TocontactInternationalRectifier, pleasevisit http://www.irf.com/whoto-call/

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October 16, 2014

IRF7807PBF-1 [INFINEON]

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