IRF7807VD1 [INFINEON]

FETKY⑩ MOSFET / SCHOTTKY DIODE; FETKY ™ MOSFET /肖特基二极管


型号：	IRF7807VD1
厂家：	Infineon
描述：	FETKY⑩ MOSFET / SCHOTTKY DIODE FETKY ™ MOSFET /肖特基二极管晶体肖特基二极管晶体管开关光电二极管
文件：	总9页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-94078

IRF7807VD1

FETKY™ MOSFET / SCHOTTKY DIODE

• Co-Pack N-channel HEXFET Power MOSFET

and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC

Converters Up to 5A Output

• Low Conduction Losses

• Low Switching Losses

K/D

A/S

K/D

• Low Vf Schottky Rectifier

Top View

Description

SO-8

The FETKY^™family of Co-Pack HEXFET MOSFETs and

Schottky diodes offers the designer an innovative, board

space saving solution for switching regulator and power

management applications. HEXFET power MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. Combining

this technology with International Rectifier’s low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of portable

electronics applications.

DEVICE CHARACTERISTICSꢀ

IRF7807VD1

R_DS

Q_G

17mΩ

9.5nC

3.4nC

12nC

(on)

Q_sw

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics.The SO-

8 package is designed for vapor phase, infrared or wave

soldering techniques.

Q_oss

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Max.

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

V_GS

±20

8.3

6.6

25°C

70°C

I_D

I_DM

P_D

25°C

70°C

25°C

70°C

2.5

1.6

3.5

2.2

Schottky and Body Diode

I_F(AV)

T_J,T_STG

Average ForwardCurrent

Junction & Storage Temperature Range

–55 to 150

°C

Thermal Resistance

Parameter

Max.

Units

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

R_θJA

R_θJL

www.irf.com

03/05/01

IRF7807VD1

Electrical Characteristics

Parameter

Min Typ Max Units

Conditions

Drain-to-Source

BV_DSS

–

V_GS= 0V, I_D= 250µA

Breakdown Voltage

Static Drain-Source

on Resistance

R_DS

mΩ

V_GS= 4.5V, I_D= 7.0A

(on)

Gate Threshold Voltage

V_GS(th)

I_DSS

1.0

V_DS= V_GS,I_D= 250µA

V_DS= 24V, V_GS= 0

Drain-Source Leakage

µA

Current

Current*

2.0

V_DS= 24V, V_GS= 0,

Tj = 100°C

Gate-Source Leakage

Current*

I_GSS

±100

V_GS= ±20V

Total Gate Charge*

Q_G

9.5

2.3

V_GS=4.5V, I_D=7.0A

V_DS= 16V

Pre-Vth

Gate-Source Charge

Q_GS1

Post-Vth

Q_GS2

1.0

Gate-Source Charge

Gate to Drain Charge

Switch Chg(Q_gs2+ Q_gd)

Output Charge*

Q_GD

Q_sw

Q_oss

R_G

2.4

3.4

5.2

16.8

V_DS= 16V, V_GS= 0

Gate Resistance

2.0

6.3

Ω

Turn-on Delay Time

t_{d (on)}

V_DD= 16V, I_D= 7.0A

V_GS= 5V, R_G= 2Ω

Resistive Load

Rise Time

t_r

1.2

Turn-off Delay Time

Fall Time

t_d

(off)

t_f

2.2

Schottky Diode & Body Diode Ratings and Characteristics

Parameter

Diode Forward Voltage

Min

Typ

Max

0.5

0.39

Units

Conditions

T_j= 25°C, I_s= 1.0A, V_GS=0V

T_j= 125°C, I_s= 1.0A, V_GS=0V

V_SD

trr

Reverse Recovery Time

ns T_j= 25°C, I_s= 7.0A, V_DS= 16V

Reverse Recovery Charge

Forward Turn-On Time

Qrr

t_on

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

ꢀ

Repetitive rating; pulse width limited by max.junction temperature.

Pulse width ≤ 400 µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board

50% Duty Cycle, Rectangular

Typical values of R_DS(on) measured at V_GS= 4.5V, Q_G, Q_SWand Q_OSS

measured at V_GS= 5.0V, I_F= 7.0A.

Device are 100% tested to these parameters.

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IRF7807VD1

Power MOSFET Selection for DC/DC

Converters

Drain Current

Control FET

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called

the Control FET, are impacted by the R_ds(on)of the

MOSFET, but these conduction losses are only about

one half of the total losses.

Gate Voltage

V_GTH

Power losses in the control switch Q1 are given

by;

Drain Voltage

P_loss= P_conduction+ P_switching+ P_drive+ P_output

This can be expanded and approximated by;

Figure 1: Typical MOSFET switching waveform

ds(on)

(

)

loss

rms

Synchronous FET

Q_gd

i_g

Q_gs2

i_g

The power loss equation for Q2 is approximated

by;

(

)

P^*

output

loss

conduction

drive

Q_oss

I_rms

ds(on)

loss

( )

(

)

This simplified loss equation includes the terms Q_gs2

and Q_osswhich are new to Power MOSFET data sheets.

Q_gs2is a sub element of traditional gate-source

charge that is included in all MOSFET data sheets.

The importance of splitting this gate-source charge

into two sub elements, Q_gs1and Q_gs2, can be seen from

Fig 1.

Q_oss

(

)

*dissipated primarily in Q1.

Q_gs2indicates the charge that must be supplied by

the gate driver between the time that the threshold

voltage has been reached (t1) and the time the drain

current rises to I_dmax(t2) at which time the drain volt-

age begins to change. Minimizing Q_gs2is a critical fac-

tor in reducing switching losses in Q1.

Q_ossis the charge that must be supplied to the out-

put capacitance of the MOSFET during every switch-

ing cycle. Figure 2 shows how Q_ossis formed by the

parallel combination of the voltage dependant (non-

linear) capacitance’s C_dsand C_dgwhen multiplied by

the power supply input buss voltage.

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IRF7807VD1

For the synchronous MOSFET Q2, R_ds(on)is an im-

portant characteristic; however, once again the im-

portance of gate charge must not be overlooked since

it impacts three critical areas. Under light load the

MOSFET must still be turned on and off by the con-

trol IC so the gate drive losses become much more

significant. Secondly, the output charge Q_ossand re-

verse recovery charge Q_rrboth generate losses that

are transfered to Q1 and increase the dissipation in

that device. Thirdly, gate charge will impact the

MOSFETs’ susceptibility to Cdv/dt turn on.

the MOSFET on, resulting in shoot-through current .

The ratio of Q_gd/Q_gs1must be minimized to reduce the

potential for Cdv/dt turn on.

Spice model for IRF7807V can be downloaded in

machine readable format at www.irf.com.

The drain of Q2 is connected to the switching node

of the converter and therefore sees transitions be-

tween ground and V_in. As Q1 turns on and off there is

a rate of change of drain voltage dV/dt which is ca-

pacitively coupled to the gate of Q2 and can induce

a voltage spike on the gate that is sufficient to turn

Figure 2: Q_ossCharacteristic

Typical Mobile PC Application

The performance of these new devices has been tested

in circuit and correlates well with performance predic-

tions generated by the system models. An advantage of

this new technology platform is that the MOSFETs it

produces are suitable for both control FET and synchro-

nous FET applications. This has been demonstrated with

the 3.3V and 5V converters. (Fig 3 and Fig 4). In these

applications the same MOSFET IRF7807V was used for

both the control FET (Q1) and the synchronous FET

(Q2). This provides a highly effective cost/performance

solution.

3.3V Supply : Q1=Q2= IRF7807V

5.0V Supply : Q1=Q2= IRF7807V

Vin=24V

Vin=14V

Vin=24V

Vin=14V

Vin=10V

Load current (A)

Figure 3

Figure 4

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IRF7807VD1

2.0

1.5

1.0

0.5

0.0

0.030

0.025

0.020

0.015

0.010

7.0A

= 7.0A

=4.5V

-60 -40 -20

20 40 60 80 100 120 140 160

2.0

4.0

6.0

8.0

10.0

12.0 14.0 16.0

T , Junction Temperature ( C)

Gate -to -Source Voltage (V)

GS,

Fig 5. Normalized On-Resistance

Fig 7. On-Resistance Vs. Gate Voltage

Vs. Temperature

VGS

4.5V

3.5V

3.0V

2.5V

2.0V

TOP

4.5V

3.5V

3.0V

2.5V

2.0V

TOP

BOTTOM 0.0V

0.0V

380µS PULSE WIDTH

380µs PULSE WIDTH

Tj = 150°C

Tj = 25°C

0.0V

0.4

0.2

0.6

0.8

0.2

0.4

0.6

0.8

, Source-to-Drain Voltage (V)

Fig 7. Typical Reverse Output Characteristics

Fig 8. Typical Reverse Output Characteristics

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IRF7807VD1

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJA A

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

= 7.0A

= 16V

, Total Gate Charge (nC)

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

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IRF7807VD1

MOSFET , Body Diode & Schottky Diode Characteristics

100

Tj = 150°C

125°C

100°C

75°C

Tj = 125°C

Tj = 25°C

0.1

50°C

25°C

0.01

0.001

0.0001

Reverse Voltage - V (V)

Fig. 12 - Typical Values of

Reverse Current Vs. Reverse Voltage

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Forward Voltage Drop - V

( V )

Fig. 11 - Typical Forward Voltage Drop

Characteristics

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IRF7807VD1

SO-8 Package Details

INCH ES

M ILLIMET ERS

D IM

MIN

MAX

.0688

.0098

.018

MIN

1.35

0.10

0.36

0.19

4.80

3.81

M AX

1.75

0.25

0.46

0.25

4.98

3.99

- B -

.0532

.0040

.014

.0075

.189

.0098

.196

- A -

0.25 (.010)

A M

.150

.157

.050 BASIC

.025 BASIC

1.27 BASIC

K x 45°

0.635 BASIC

.2284

.011

.2440

5.80

0.28

0.41

6.20

0.48

1.27

.019

.050

8°

- C -

0.10 (.004)

0.16

0°

8°

0.25 (.010)

C A S B S

RECOMMENDED FOOTPRINT

NOTES:

0.72 (.028 )

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

6.46 ( .255 )

1.78 (.070)

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

1.27 ( .050 )

SO-8 Part Marking

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IRF7807VD1

SO-8 Tape and Reel

TER M IN AL N UM BER

12.3 ( .484

11.7 ( .461

)

8.1 ( .318

7.9 ( .312

)

FE ED D IREC TIO N

N O T E S :

1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .

2 . A L L D IM E N S IO N S A R E S H O W N IN M ILL IM E TE R S (IN C H E S ).

3 . O U T L IN E C O N FO R M S TO E IA -4 8 1

& E IA -54 1.

330.00

(12.992)

M A X.

14.40 ( .566

12.40 ( .488

)

N O TES

1. CO N TR O LLIN G DIM EN SIO N : M ILLIME TER .

2. O UTLIN E C O N FO R M S T O EIA -481 EIA-541.

This product has been designed and qualified for the commercial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 03/01

www.irf.com

IRF7807VD1 [INFINEON]

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