IRF7807VPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7807VPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总8页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95210
IRF7807VPbF
HEXFET® Power MOSFET
• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
A
D
1
2
3
4
8
7
S
S
100% RG Tested
Lead-Free
D
6
5
S
D
D
Description
G
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
SO-8
Top View
DEVICE CHARACTERISTICSꢀ
IRF7807V
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
17 mΩ
9.5 nC
3.4 nC
RDS(on)
QG
QSW
QOSS
12 nC
Absolute Maximum Ratings
Parameter
Symbol
IRF7807V
Units
VDS
30
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
TA = 25°C
TA = 70°C
Continuous Drain or Source
(VGS ≥ 4.5V)
8.3
I
D
A
6.6
66
I
Pulsed Drain Current
DM
TA = 25°C
TA = 70°C
2.5
Power Dissipation
P
W
°C
A
D
1.6
-55 to 150
TJ , T
IS
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
STG
2.5
66
Pulsed Source Current
ISM
Thermal Resistance
Parameter
Symbol
RθJA
Typ
–––
–––
Max
50
Units
Maximum Junction-to-Ambient
°C/W
RθJL
20
Maximum Junction-to-Lead
11/3/04
IRF7807VPbF
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Symbol Min Typ Max Units
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0
BVDSS
RDS(on)
VGS(th)
30
––– –––
V
mΩ
V
–––
17 25
1.0 ––– 3.0
––– ––– 100
––– ––– 20
––– ––– 100
IDSS
Drain-Source Leakage Current
µA
VDS = 24V, VGS = 0
VDS = 24V, VGS = 0, TJ = 100°C
IGSS
QG
Gate-Source Leakage Current*
Total Gate Charge*
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge*
––– ––– ±100 nA
––– 9.5 14
V
V
GS = ± 20V
GS = 5V, ID = 7.0A
VDS = 16V
QGS1
QGS2
QGD
QSW
QOSS
RG
––– 2.3 –––
––– 1.0 –––
––– 2.4 –––
––– 3.4 5.2
nC
VDS = 16V, VGS = 0
–––
12 16.8
Gate Resistance
0.9 ––– 2.8
––– 6.3 –––
––– 1.2 –––
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 16V
ID = 7A
ns
Turn-Off Delay Time
Fall Time
–––
11 –––
VGS = 5V, RG = 2Ω
Resistive Load
––– 2.2 –––
Source-Drain Ratings and Characteristics
Parameter
Min Typ Max Units
Conditions
Symbol
IS = 7.0A ,VGS = 0V
VSD
Diode Forward Voltage*
––– ––– 1.2
V
di/dt = 700A/µs
VDS = 16V, VGS = 0V, IS = 7.0A
Qrr
Reverse Recovery Charge
–––
64 –––
nC
Reverse Recovery Charge
(with Parallel Schottsky)
di/dt = 700A/µs , (with 10BQ040)
Qrr(s)
–––
41 –––
V
DS = 16V, VGS = 0V, IS = 7.0A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 7.0A.
Rθ is measured at TJ approximately 90°C
*
Device are 100% tested to these parameters.
2
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IRF7807VPbF
Power MOSFET Selection for DC/DC
Converters
Control FET
4
Drain Current
1
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
Gate Voltage
t2
t3
t1
VGTH
t0
Power losses in the control switch Q1 are given
by;
2
Drain Voltage
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Figure 1: Typical MOSFET switching waveform
P
= I 2 × Rds(on )
(
)
loss
rms
Synchronous FET
⎛
⎛
Qgd
ig
⎞
Qgs2
ig
⎞
⎟
The power loss equation for Q2 is approximated
by;
⎜
⎟
⎜
+ I ×
× V × f + I ×
× V × f
in
in
⎝
⎠
⎝
⎠
+ Q × V × f
(
)
P = P
+ P + P*
g
g
loss
conduction
drive
output
+
×V × f
P = Irms 2 × Rds(on)
⎛ Qoss
⎞
⎠
in
loss ( )
⎝
2
+ Q × V × f
(
)
g
g
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 1.
⎛
⎜
Qoss
⎞
+
×V × f + Q × V × f
(
)
in
rr
in
⎝ 2
⎠
*dissipated primarily in Q1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to Idmax (t2) at which time the drain volt-
age begins to change. Minimizing Qgs2 is a critical fac-
tor in reducing switching losses in Q1.
Qoss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure 2 shows how Qoss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitance’s Cds and Cdg when multiplied by
the power supply input buss voltage.
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3
IRF7807VPbF
For the synchronous MOSFET Q2, Rds(on) is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and re-
verse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807V can be downloaded in
machine readable format at www.irf.com.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
Figure 2: Qoss Characteristic
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predic-
tions generated by the system models. An advantage of
this new technology platform is that the MOSFETs it
produces are suitable for both control FET and synchro-
nous FET applications. This has been demonstrated with
the 3.3V and 5V converters. (Fig 3 and Fig 4). In these
applications the same MOSFET IRF7807V was used for
both the control FET (Q1) and the synchronous FET
(Q2). This provides a highly effective cost/performance
solution.
3.3V Supply : Q1=Q2= IRF7807V
5.0V Supply : Q1=Q2= IRF7807V
95
94
93
92
91
93
92
91
90
89
88
87
90
Vin=24V
89
Vin=14V
86
85
84
83
Vin=24V
Vin=14V
Vin=10V
88
Vin=10V
87
86
1
2
3
4
5
1
2
3
4
5
Load current (A)
Load current (A)
Figure 3
Figure 4
4
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IRF7807VPbF
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
7.0A
=
I
D
I
D
=
7.0A
V
= 16V
DS
V
=4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
2
4
6
8
10
12
T , Junction Temperature ( C)
J
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Normalized On-Resistance
Gate-to-Source Voltage
Vs. Temperature
100
10
1
0.030
°
T = 150 C
J
0.025
0.020
0.015
0.010
I
= 7.0A
°
D
T = 25 C
J
V
= 0 V
GS
1.0
0.1
0.2
0.4
0.6
0.8
1.2
2.0
4.0
V
6.0
8.0
10.0
12.0
14.0
16.0
V
,Source-to-Drain Voltage (V)
SD
Gate -to -Source Voltage (V)
GS,
Fig 8. Typical Source-Drain Diode
Fig 7. On-Resistance Vs. Gate Voltage
Forward Voltage
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5
IRF7807VPbF
100
D = 0.50
0.20
10
0.10
0.05
P
2
DM
0.02
1
t
1
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7807VPbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7807VPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
8
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INFINEON
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