IRF7809ATR [INFINEON]
Power Field-Effect Transistor, 14.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | IRF7809ATR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93810
PD - 93811
IRF7809A/IRF7811A
PROVISIONAL DATASHEET
HEXFET® Chipset for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
A
A
D
1
2
3
4
8
7
S
S
D
6
5
Description
S
D
D
These new devices employ advanced HEXFET® Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge.The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
G
SO-8
Top View
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including RDS(on), gate charge
and Cdv/dt-induced turn-on immunity.The IRF7809A offers
particulary low RDS(on) and high Cdv/dt immunity for
synchronous FET applications.The IRF7811A offers an
extremely low combination of Qsw & RDS(on) for reduced
losses in control FET applications.
DEVICE RATINGS
IRF7809A IRF7811A
VDS
30V
28V
12 mΩ
23 nC
7 nC
RDS
QG
8.5 mΩ
73 nC
22.5 nC
30 nC
(on)
Qsw
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
Qoss
31 nC
Absolute Maximum Ratings
Parameter
Symbol
IRF7809A
IRF7811A
Units
Drain-Source Voltage
VDS
VGS
ID
30
28
V
Gate-Source Voltage
±12
Continuous Drain or Source TA = 25°C
14.5
14.2
100
11.4
11.2
100
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
TL = 90°C
A
IDM
PD
TA = 25°C
TL = 90°C
2.5
2.4
W
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
TJ,TSTG
IS
–55 to 150
°C
A
2.5
50
2.5
50
ISM
Thermal Resistance
Parameter
Max.
50
25
Units
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
RθJA
RθJL
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1
01/19/00
IRF7809A/IRF7811A
Electrical Characteristics
Parameter
IRF7809A
Min Typ Max
IRF7811A
Min Typ Max Units
Conditions
Drain-to-Source
Breakdown Voltage*
BVDSS
30
–
7
–
28
–
–
V
VGS = 0V, ID = 250µA
Static Drain-Source
on Resistance*
RDS
8.5
10
12
mΩ VGS = 4.5V, ID = 15A
VDS = VGS,ID = 250µA
(on)
Gate Threshold Voltage*
VGS(th)
IDSS
1.0
1.0
V
Drain-Source Leakage
Current*
30
30
µA VDS = 24V, VGS = 0
VDS = 24V, VGS = 0,
Tj = 100°C
*
150
150
Gate-Source Leakage
Current*
IGSS
±100
±100 nA VGS = ±12V
Total Gate Chg Cont FET*
Total Gate Chg Sync FET*
QG
61
55
14
75
73
19
17
23
VGS=5V, ID=15A, VDS=16V
QG
20.5
VGS = 5V, VDS< 100mV
VDS = 16V, ID = 15A
Pre-Vth
QGS1
2.7
Gate-Source Charge
Post-Vth
QGS2
3.5
1.3
nC
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)*
Output Charge*
QGD
Qsw
Qoss
RG
13.5
17
4.5
5.8
26
22.5
30
7.0
31
25
VDS = 16V, VGS = 0
VDD = 16V, ID = 15A
Gate Resistance
Turn-on Delay Time
Rise Time
1.1
19
1.8
8
Ω
td (on)
tr
td (off)
tf
9
4
ns VGS = 5V
Clamped Inductive Load
Turn-off Delay Time
FallTime
32
16
12
8
Input Capacitance
Output Capacitance
Ciss
Coss
–
–
–
7300
900
350
–
–
–
–
–
–
1800
900
60
–
–
–
pF VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter
Min Typ Max
Min Typ Max Units
1.0
Conditions
Diode Forward
Voltage*
VSD
Qrr
1.0
V
IS = 15A, VGS = 0V
Reverse Recovery
Charge
94
87
82
74
nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Devices are 100% tested to these parameters.
2
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IRF7809A/IRF7811A
SO-8 Package Outline
Part Marking Information
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3
IRF7809A/IRF7811A
SO-8Tape & Reel Information
Dimensions are shown in millimeters (inches)
TER M IN AL N U M BE R
1
12.3 ( .484
11.7 ( .461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED D IRE C TIO N
N O TES :
1 . C O N TR O L LIN G D IM EN SIO N : M ILL IM ETER .
2 . A LL D IM EN SIO N S A RE SH O W N IN M ILL IM ETER S(INC H ES).
3 . O UTL IN E C O N FO R M S TO EIA -4 81 & EIA-54 1.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
N O TE S :
1. C O N TR O LLIN G D IM EN SIO N : M ILLIM ETER .
2. O UTLIN E C O N FO RM S TO EIA -481 & EIA-541.
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http://www.irf.com/ Data and specifications subject to change without notice. 1/00
4
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