IRF7811APBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7811APBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95264A
IRF7811APbF
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
VDSS
28V
RDS(on) max
Qg
17nC
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l 100% RG Tested
12mΩ
A
A
D
l Lead-Free
1
2
3
4
8
7
S
S
S
G
D
6
5
D
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Symbol
@ TA = 25°C
@ TA = 70°C
Parameter
Continuous Drain Current, VGS @ 10V
Max
11
Units
I
I
I
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
9.1
A
91
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
2.5
1.6
D
D
W
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
0.02
±12
W/°C
V
VGS
T
J
Operating Junction and
-55 to + 150
T
Storage Temperature Range
°C
STG
Smoldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Symbol
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ
–––
–––
Max
20
Units
Rθ
Rθ
JL
°C/W
50
JA
Notes through ꢀare on page 10
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1
1/11/05
IRF7811APbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
BVDSS
Parameter
Min. Typ. Max. Units
28 ––– –––
––– 0.025 –––
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
V
/ T
∆
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 11A
∆Β
DSS
J
–––
–––
1.0
8.7
10
10
12
RDS(on)
m
Ω
Static Drain-to-Source On-Resistance
V
GS = 4.5V, ID = 9.0A
VGS(th)
Gate Threshold Voltage
–––
-4.0
3.0
V
V
DS = VGS, ID = 250µA
V
Gate Threshold Voltage Coefficient
–––
––– mV/°C
∆
GS(th)
VDS = 28V, VGS = 0V
–––
–––
–––
–––
28
–––
–––
–––
–––
–––
17
1.0
µA
IDSS
Drain-to-Source Leakage Current
150
VDS = 24V, VGS = 0V, TJ = 100°C
VGS = 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
IGSS
VGS = -12V
gfs
–––
26
S
V
DS = 15V, ID = 9.0A
Qg
–––
–––
–––
–––
–––
–––
–––
0.9
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
3.3
1.3
4.7
7.2
6.0
24
–––
–––
–––
–––
–––
–––
3.7
V
DS = 15V
VGS = 4.5V
D = 9.0A
See Fig. 16
nC
I
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd
Output Charge
)
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
Turn-On Delay Time
Rise Time
–––
7.5
4.1
19
td(on)
tr
td(off)
tf
–––
–––
–––
–––
–––
–––
–––
–––
V
DD = 15V, VGS = 4.5V
I
D = 9.0A
ns
Turn-Off Delay Time
Fall Time
Clamped Inductive Load
6.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
––– 1760 –––
VGS = 0V
pF
–––
–––
960
54
–––
–––
VDS = 15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
58
Units
mJ
Symbol
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
9.0
A
Diode Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
IS
–––
–––
11
A
Pulsed Source Current
(Body Diode)
integral reverse
ISM
–––
–––
91
p-n junction diode.
–––
–––
–––
0.8
0.66
72
1.0
–––
110
T
T
T
= 25°C, I = 9.0A, V
= 0V
GS
J
J
J
S
VSD
trr
Diode Forward Voltage
V
= 125°C, I = 9.0A, VGS = 0V
S
Reverse Recovery Time
ns
= 25°C, I = 9.0A, VR = 15V
F
Qrr
trr
Reverse Recovery Charge
Reverse Recovery Time
–––
–––
93
73
140
110
nC di/dt = 100A/µs
ns = 125°C, I = 9.0A, VR = 15V
nC di/dt = 100A/µs
T
J
F
Qrr
Reverse Recovery Charge
–––
100
150
2
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IRF7811APbF
100
10
1
100
10
VGS
VGS
TOP
10V
4.5V
3.5V
2.7V
2.5V
2.0V
1.8V
TOP
10V
4.5V
3.5V
2.7V
2.5V
2.0V
1.8V
BOTTOM 1.5V
BOTTOM 1.5V
1
1.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1.5V
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
1.00
2.0
I
= 11A
D
V
= 10V
GS
T
= 150°C
J
1.5
1.0
0.5
T
= 25°C
J
0.10
V
= 15V
DS
20µs PULSE WIDTH
0.01
1.4
1.8
2.2
2.6
3.0
3.4
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7811APbF
12
10
8
100000
V
= 0V,
f = 1 MHZ
GS
I = 9.0A
D
V
=1 5V
C
= C + C
,
C
SHORTED
DS
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
10000
1000
100
oss
ds
gd
Ciss
6
Coss
4
2
Crss
0
10
0
10
20
30
40
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10.0
1.0
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7811APbF
12
10
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
75
100
125
150
T
, Junction Temperature (°C)
J
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
2
DM
0.02
0.01
1
t
1
t
2
Notes:
SINGLE PULSE
1. Duty factor D =
2. Peak T = P
J
t / t
1
x Z
(THERMAL RESPONSE)
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7811APbF
0.013
0.011
0.009
0.007
0.005
0.03
0.02
0.01
0.00
V
V
= 4.5V
= 10V
GS
I
= 9.0A
D
GS
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
9.0 10.0
0
10
20
30
40
50
60
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
140
+
ID
V
DS
D.U.T.
-
TOP
4.0A
7.2A
120
100
80
60
40
20
0
V
GS
BOTTOM 9.0A
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Basic Gate Charge Test Circuit
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
25
50
75
100
125
150
DD
-
I
A
20V
Starting T , Junction Temperature (°C)
Ω
0.01
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7811APbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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7
IRF7811APbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Synchronous FET
Control FET
The power loss equation for Q2 is approximated
by;
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
P = P
+ P + P*
loss
conduction
drive
output
P = Irms 2 × Rds(on)
loss ( )
Power losses in the control switch Q1 are given
by;
+ Q × V × f
(
)
g
g
⎛
⎜
Qoss
⎞
⎠
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
+
×V × f + Q × V × f
(
)
in
rr
in
⎝ 2
This can be expanded and approximated by;
*dissipated primarily in Q1.
P
= I 2 × Rds(on )
(
)
loss
rms
For the synchronous MOSFET Q2, Rds(on) is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and re-
verse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
⎛
⎛
Qgd
ig
⎞
Qgs2
ig
⎞
⎟
⎜
⎟
⎜
+ I ×
× V × f + I ×
× V × f
in
in
⎝
⎠
⎝
⎠
+ Q × V × f
(
)
g
g
⎛ Qoss
⎞
⎠
+
×V × f
in
⎝
2
This simplified loss equation includes the terms Qgs2
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 16.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached and the time the drain cur-
rent rises to Idmax at which time the drain voltage be-
gins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure A shows how Qoss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitances Cds and Cdg when multiplied by
the power supply input buss voltage.
Figure A: Qoss Characteristic
8
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IRF7811APbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMET ER S
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WEEK
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
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9
IRF7811APbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board
ꢀ Rθ is measured at TJ approximately at 90°C
Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 9.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/05
10
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相关型号：
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INFINEON
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Power Field-Effect Transistor, 10.8A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8
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