IRF7828PBF [INFINEON]
HEXFET㈢ Power MOSFET for DC-DC Converters; HEXFET㈢功率MOSFET的DC- DC转换器
| 型号： | IRF7828PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET for DC-DC Converters |
| 文件： | 总6页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95214A
IRF7828PbF
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
A
D
1
2
3
4
8
7
S
S
D
6
5
S
D
D
Description
G
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
Top View
DEVICE CHARACTERISTICSꢀ
The IRF7828 has been optimized for all parameters that
are critical in synchronous buck converters including
IRF7828PbF
RDS
QG
9.5mΩ
9.2nC
3.7nC
6.1nC
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
(on)
The IRF7828 offers particulary low RDS(on) and high Cdv/dt
immunity for synchronous FET applications.
Qsw
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Qoss
Absolute Maximum Ratings
Parameter
Symbol
IRF7828PbF
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
30
±20
V
Continuous Drain or Source TA = 25°C
13.6
11
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
TL = 70°C
A
IDM
PD
100
TA = 25°C
TL = 70°C
2.5
W
1.6
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
TJ,TSTG
IS
–55 to 150
3.1
°C
A
ISM
100
Thermal Resistance
Parameter
Max.
50
Units
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
RθJA
RθJL
20
04/05/07
IRF7828PbF
Electrical Characteristics
Parameter
Min Typ Max Units
Conditions
Drain-to-Source
BVDSS
30
–
–
V
VGS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source
on Resistance
RDS
–
9.5 12.5 mΩ
VGS = 4.5V, ID = 10A
(on)
Gate Threshold Voltage
Drain-Source Leakage
VGS(th)
IDSS
1.0
–
–
–
–
V
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
1.0
Current
*
–
–
150
µA
nA
VDS = 24V, VGS = 0,
Tj = 125°C
Gate-Source Leakage
Current
IGSS
–
–
±100
VGS = ±20V
Total Gate Chg Cont FET
Total Gate Chg Sync FET
QG
–
–
–
9.2
7.3
2.5
14
–
VGS=5.0V, ID=15A, VDS=16V
VGS = 5V, VDS< 100mV
VDS = 15V, ID = 10A
QG
Pre-Vth
QGS1
–
Gate-Source Charge
Post-Vth
QGS2
–
0.8
–
nC
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)
Output Charge
QGD
Qsw
Qoss
RG
–
–
–
–
–
–
–
–
–
–
–
2.9
3.7
–
–
–
–
–
–
–
–
–
–
–
6.1
VDS = 10V, VGS = 0
Gate Resistance
Turn-on Delay Time
Rise Time
2.3
Ω
td (on)
tr
td (off)
tf
6.3
VDD = 15V, ID = 10A
VGS = 4.5V
2.7
ns
Turn-off Delay Time
Fall Time
9.7
Clamped Inductive Load
7.3
Input Capacitance
Output Capacitance
Ciss
Coss
1010
360
110
pF
VDS = 15V, VGS = 0
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units
Conditions
Diode Forward
Voltage*
VSD
Qrr
–
–
1.0
V
IS = 10A, VGS = 0V
Reverse Recovery
–
13
–
nC
di/dt ~ 700A/µs
Charge
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
–
13
–
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 10A.
2
www.irf.com
IRF7828PbF
2.0
1.5
1.0
0.5
12
10
8
I
= 14A
I = 10A
D
D
V
= 24V
DS
VDS= 15V
V
= 10V
GS
6
4
2
0
0
5
10
15
20
-60 -40 -20
0
20 40 60 80 100 120 140 160
Q
Total Gate Charge (nC)
G
T
J
, Junction Temperature (°C)
Fig 1. Normalized On-Resistance
Fig 2. Typical Gate Charge Vs.
Vs. Temperature
Gate-to-Source Voltage
10000
V
= 0V,
f = 1 MHZ
GS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
Coss
Crss
1
10
100
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Capacitance Vs.
Fig 3. On-Resistance Vs. Gate Voltage
Drain-to-Source Voltage
www.irf.com
3
IRF7828PbF
100.0
10.0
1.0
100.0
T
= 150°C
J
T
= 150°C
J
10.0
1.0
T
= 25°C
J
T
= 25°C
V
J
V
= 15V
DS
20µs PULSE WIDTH
= 0V
GS
0.1
0.1
2.0
3.0
4.0
5.0
6.0
0.0
0.5
1.0
1.5
V
, Gate-to-Source Voltage (V)
V
, Source-toDrain Voltage (V)
GS
SD
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com
IRF7828PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information (Lead-Free)
www.irf.com
5
IRF7828PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/07
6
www.irf.com
相关型号：
IRF7831PBF
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
INFINEON
©2020 ICPDF网 联系我们和版权申明