IRF7854TRPBF [INFINEON]
Primary Side Switch in Bridge or two switch forward topologies using 48V ETSI range inputs; 采用ETSI 48V的输入范围在Bridge中，两个开关正激拓扑结构的初级侧开关
| 型号： | IRF7854TRPBF |
| 厂家： | 
Infineon |
| 描述： | Primary Side Switch in Bridge or two switch forward topologies using 48V ETSI range inputs |
| 文件： | 总8页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97172
IRF7854PbF
HEXFET® Power MOSFET
Applications
l Primary Side Switch in Bridge or two-
switch forward topologies using 48V
(±10%) or 36V to 60V ETSI range inputs.
l Secondary Side Synchronous
Rectification Switch for 12Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
VDSS
80V
RDS(on) max
ID
10A
13.4m @VGS = 10V
:
A
A
D
1
8
S
2
3
4
7
S
S
D
6
Benefits
D
l Low Gate to Drain Charge to Reduce
Switching Losses
5
G
D
SO-8
Top View
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design,
(See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Max.
80
Units
V
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
± 20
10
I
I
I
@ T = 25°C
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
D
A
@ T = 70°C
A
7.9
79
DM
P
@T = 25°C
A
2.5
W
Maximum Power Dissipation
Linear Derating Factor
D
0.02
W/°C
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
11
V/ns
°C
T
-55 to + 150
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
–––
Max.
20
Units
°C/W
Rθ
Rθ
JL
–––
50
JA
Notes through are on page 8
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1
01/05/06
IRF7854PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
80 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.095 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
11
13.4
4.9
VGS = 10V, ID = 10A
mΩ
V
VGS(th)
–––
–––
–––
–––
VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
µA VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 6.0A
ID = 6.0A
gfs
Qg
12
–––
–––
S
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
27
41
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
7.7
8.7
9.4
8.5
15
–––
–––
–––
–––
–––
–––
nC VDS = 40V
VGS = 10V
VDD = 40V
ID = 6.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 6.2Ω
VGS = 10V
8.6
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1620 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
350
86
–––
–––
VDS = 25V
pF ƒ = 1.0MHz
––– 1730 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
–––
230
410
–––
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
110
6.0
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
I
Continuous Source Current
–––
–––
2.3
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
79
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
43
1.3
65
V
T = 25°C, I = 6.0A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 6.0A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
t
76
110
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7854PbF
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
1
0.1
5.0V
5.0V
0.01
0.001
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
≤
≤
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
I
= 10A
D
V
= 10V
GS
T
= 150°C
J
1.5
1.0
0.5
T
= 25°C
J
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF7854PbF
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 6.0A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
V
= 64V
= 40V
= 16V
DS
DS
DS
= C + C
ds
gd
10000
1000
100
C
iss
6.0
C
oss
4.0
C
rss
2.0
10
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
V
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
10msec
1
T
= 25°C
0.1
0.01
A
Tj = 150°C
Single Pulse
1msec
V
= 0V
GS
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7854PbF
10
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
V
GS
Fig 9. Maximum Drain Current vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
R1
R1
R2
R2
R3
R3
τι (sec)
Ri (°C/W)
τ 4.329
τ
τA
J τJ
τ
0.1
0.003565
1.1249
34.5
1τ1
τ
τ
2τ2
3τ3
30.099
15.590
Ci= τi/Ri
Ci= τi/Ri
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7854PbF
40
35
30
25
20
15
10
25
I
= 6.0A
D
T
= 125°C
J
20
15
10
5
T
= 25°C
T
= 125°C
J
J
T
= 25°C
12
J
Vgs = 10V
4
6
8
10
14
16
0
10 20 30 40 50 60 70 80 90
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Q
G
VGS
L
VCC
Q
Q
GD
GS
DUT
0
450
1K
V
I
G
D
400
TOP
0.61A
0.75A
BOTTOM 6.0A
Charge
350
300
250
200
150
100
50
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
0
I
A
20V
0.01
Ω
25
50
75
100
125
150
t
p
I
AS
Starting T , Junction Temperature (°C)
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
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IRF7854PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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7
IRF7854PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 6.0A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 6.0mH,
RG = 25Ω, IAS = 6.0A.
.
When mounted on 1 inch square copper
R is measured at TJ of approximately 90°C.
θ
board, t ≤ 10 sec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/06
8
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