IRF7NJZ44VPBF [INFINEON]

Power Field-Effect Transistor, 22A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN;


型号：	IRF7NJZ44VPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 22A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN 晶体晶体管功率场效应晶体管开关脉冲
文件：	总7页 (文件大小：115K)
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PD - 94433

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRF7NJZ44V

60V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF7NJZ44V

60V

0.0165Ω 22A*

Seventh Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

SMD-0.5

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

22*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

5.0

V/ns

dv/dt

2.2

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package and internal wires

For footnotes refer to the last page

www.irf.com

04/24/02

IRF7NJZ44V

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

—

= 0V, I = 250µA

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.056

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.0165

Ω

= 10V, I = 22A

GS D

DS(on)

➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

= V , I = 250µA

GS(th)

Ω

S ( )

=15V, I

= 22A ➀

250

= 60V ,V =0V

DSS

DS GS

µA

—

= 48V,

= 0V, T =125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

4.0

100

-100

=-20V

= -20V

GSS

=10V, I = 22A

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

= 48V

= 30V, I = 22A,

120

= 10V, R = 7.5Ω

GS G

d(off)

+ L

Total Inductance

—

Measured from the center of drain

pad to the center of source pad

Input Capacitance

—

1723

370

—

= 0V, V

= 25V

iss

f = 1.0MHz

Output Capacitance

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

22*

1.5

105

T = 25°C, I = 22A, V

= 0V ➀

Reverse Recovery Time

T = 25°C, I = 22A, di/dt ≤ 100A/µs

Reverse Recovery Charge

250 nC

≤ 25V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package and internal wires

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

2.5

°C/W

thJC

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRF7NJZ44V

1000

100

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

TOP

BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 150 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

0.0

100

22A

= 150°C

= 25°C

= 25V

20µs PULSE WIDTH

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs.Temperature

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IRF7NJZ44V

3000

2500

2000

1500

1000

500

I = 22A

= 0V,

f = 1MHz

C SHORTED

= 48V

= 30V

= 12V

= C + C

iss

gd ,

= C

rss

= C + C

oss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-SourceVoltage

Gate-to-SourceVoltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R (on)

T = 150 C

100

100µs

1ms

T = 25 C

0ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

0.1

0.4

0.6

0.8

1.0

1.2

1.4

100

1000

,Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

ForwardVoltage

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IRF7NJZ44V

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF7NJZ44V

120

100

TOP

10A

14A

15V

BOTTOM 22A

DRIVER

D S

D.U.T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10V

D.U.T.

3mA

Current Sampling Resistors

Charge

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRF7NJZ44V

Footnotes:

Repetitive Rating; Pulse width limited by

≤ 22A, di/dt ≤ 278A/µs,

maximum junction temperature.

≤ 22V, T ≤ 150°C

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 25 V, Starting T = 25°C, L= 0.27mH

Peak I

= 22A, V

= 10V, R = 25Ω

Case Outline and Dimensions — SMD-0.5

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/02

www.irf.com

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