IRF7Y1405CMPBF [INFINEON]
暂无描述;型号: | IRF7Y1405CMPBF |
厂家: | Infineon |
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文件: | 总7页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94449
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF7Y1405CM
55V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF7Y1405CM
55V
0.0153Ω 18A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
18*
18*
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
72
DM
@ T = 25°C
P
100
W
W/°C
V
D
C
Linear Derating Factor
0.8
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
308
mJ
A
AS
I
18
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
10
mJ
V/ns
AR
dv/dt
1.8
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
05/31/02
IRF7Y1405CM
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
55
—
—
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.057
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.0153
Ω
V
= 10V, I = 18A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
36
—
—
—
—
—
4.0
—
V
V
V
= V , I = 250µA
GS(th)
fs
DS
DS
V
GS
D
Ω
g
S ( )
=15V, I
= 18A ➀
DS
I
25
250
= 55V ,V =0V
GS
DSS
DS
µA
—
V
= 44V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
200
40
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I = 18A
g
gs
gd
d(on)
r
GS
D
= 44V
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
DS
80
t
t
t
t
20
V
DD
= 28V, I = 18A,
D
90
V
= 10V, R = 2.5Ω
GS G
ns
250
150
—
d(off)
f
L
+ L
Total Inductance
Measured from drain lead (6mm/
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
S
D
nH
l C
C
Input Capacitance
—
—
—
5080
1300
300
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
18*
72
S
A
SM
V
t
1.3
100
V
ns
T = 25°C, I = 18A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 18A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
350 nC
V
DD
≤ 25V ➀
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRF7Y1405CM
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
TOP
TOP
10V
7.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
BOTTOM 3.7V
3.7V
1
3.7V
2
0µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
10
1
18A
=
I
D
T
= 150°C
J
1.5
1.0
0.5
0.0
T
= 25°C
J
V
DS
= 25V
20µs PULSE WIDTH
V
= 10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
www.irf.com
3
IRF7Y1405CM
8000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 18A
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
6000
4000
2000
0
C
iss
C
oss
rss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
60
120
180
240
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
T
= 150°C
J
100µs
T
= 25°C
J
10
1ms
1
0ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage ( V )
1
10
100
1000
V
V
DS
, Drain-toSource Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
www.irf.com
IRF7Y1405CM
RD
70
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF7Y1405CM
800
600
400
200
0
I
D
TOP
8.0A
11.4A
BOTTOM 18A
15V
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
A
V
2
GS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
(BR )D SS
°
Starting T , Junction Temperature( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
V
10V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
3mA
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRF7Y1405CM
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 18A, di/dt ≤ 230 A/µs,
SD
maximum junction temperature.
V
≤ 55V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= 25 V, Starting T = 25°C, L= 1.9 mH
J
DD
Peak I
= 18A, V
=10V, R = 25Ω
AS
GS
G
Case Outline and Dimensions —TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C
A
B
P IN AS S IG NMENTS
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
GATE
DRAIN
SOURCE
3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/02
www.irf.com
7
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