IRF7Y1405CM [INFINEON]

HEXFET® POWER MOSFET THRU-HOLE (TO-257AA); HEXFET功率MOSFET直通孔（ TO- 257AA ）


型号：	IRF7Y1405CM
厂家：	Infineon
描述：	HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) HEXFET功率MOSFET直通孔（ TO- 257AA ）
文件：	总7页 (文件大小：96K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 94449

HEXFET^®POWER MOSFET

THRU-HOLE (TO-257AA)

IRF7Y1405CM

55V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF7Y1405CM

55V

0.0153Ω 18A*

Seventh Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

TO-257AA

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

18*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

100

W/°C

Linear Derating Factor

0.8

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

308

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

1.8

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10s)

4.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

05/31/02

IRF7Y1405CM

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

—

= 0V, I = 250µA

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.057

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.0153

Ω

= 10V, I = 18A

GS D

DS(on)

➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

= V , I = 250µA

GS(th)

Ω

S ( )

=15V, I

= 18A ➀

250

= 55V ,V =0V

DSS

µA

—

= 44V,

= 0V, T =125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

6.8

100

-100

200

= 20V

= -20V

GSS

=10V, I = 18A

d(on)

= 44V

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

= 28V, I = 18A,

= 10V, R = 2.5Ω

GS G

250

150

—

d(off)

+ L

Total Inductance

Measured from drain lead (6mm/

0.25in. from package ) to source

lead (6mm/0.25in. from pacakge

l C

Input Capacitance

—

5080

1300

300

—

= 0V, V

= 25V

iss

f = 1.0MHz

Output Capacitance

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

18*

1.3

100

T = 25°C, I = 18A, V

= 0V ➀

Reverse Recovery Time

T = 25°C, I = 18A, di/dt ≤ 100A/µs

Reverse Recovery Charge

350 nC

≤ 25V ➀

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

1.25

°C/W

thJC

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRF7Y1405CM

1000

100

1000

100

VGS

15V

VGS

15V

10V

7.0V

5.0V

4.5V

4.3V

4.0V

TOP

10V

7.0V

5.0V

4.5V

4.3V

4.0V

BOTTOM 3.7V

3.7V

0µs PULSE WIDTH

20µs PULSE WIDTH

Tj = 25°C

Tj = 150°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

100

18A

= 150°C

1.5

1.0

0.5

0.0

= 25°C

= 25V

20µs PULSE WIDTH

= 10V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

3.6

3.8

4.0

4.2

4.4

4.6

4.8

5.0

5.2

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs.Temperature

www.irf.com

IRF7Y1405CM

8000

= 0V,

f = 1MHz

C SHORTED

= 18A

= C + C

iss

gd ,

= 44V

= 27V

= 11V

= C

rss

= C + C

oss

6000

4000

2000

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

120

180

240

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-SourceVoltage

Gate-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

= 150°C

100µs

= 25°C

1ms

0ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

, Source-to-Drain Voltage ( V )

100

1000

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

ForwardVoltage

www.irf.com

IRF7Y1405CM

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRF7Y1405CM

800

600

400

200

TOP

8.0A

11.4A

BOTTOM 18A

15V

DRIVER

D S

D.U.T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

(BR )D SS

Starting T , Junction Temperature( C)

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10V

D.U.T.

3mA

Current Sampling Resistors

Charge

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRF7Y1405CM

Footnotes:

Repetitive Rating; Pulse width limited by

≤ 18A, di/dt ≤ 230 A/µs,

maximum junction temperature.

≤ 55V, T ≤ 150°C

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 25 V, Starting T = 25°C, L= 1.9 mH

Peak I

= 18A, V

=10V, R = 25Ω

Case Outline and Dimensions —TO-257AA

0.13 [.005]

5.08 [.200]

4.83 [.190]

3.81 [.150]

3.56 [.140]

10.66 [.420]

10.42 [.410]

3X Ø

1.14 [.045]

0.89 [.035]

16.89 [.665]

16.39 [.645]

13.63 [.537]

13.39 [.527]

10.92 [.430]

10.42 [.410]

0.71 [.028]

MAX.

15.88 [.625]

12.70 [.500]

2.54 [.100]

0.88 [.035]

0.64 [.025]

3X Ø

3.05 [.120]

Ø 0.50 [.020]

P IN AS S IG NMENTS

NOTES :

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.

2. CONTROLLING DIMENSION: INCH.

GATE

DRAIN

SOURCE

3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].

4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/02

www.irf.com

相关型号：