IRF840 [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A); 功率MOSFET ( VDSS = 500V , RDS(ON) = 0.85ohm ,ID = 8.0A )型号: | IRF840 |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
文件: | 总6页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRF840-004PBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
VISHAY
IRF840-013
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
VISHAY
IRF840-017
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
VISHAY
IRF840-017PBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
VISHAY
IRF840-024
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
VISHAY
IRF840-024PBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
VISHAY
IRF840-029PBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
VISHAY
IRF84016
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
©2020 ICPDF网 联系我们和版权申明