IRF8736TRPBF-1 [INFINEON]
Small Signal Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8;
| 型号： | IRF8736TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件： | 总9页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF8736PbF-1
HEXFET® Power MOSFET
VDS
30
4.8
17
V
A
A
1
2
3
4
8
D
S
S
S
G
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
m
Ω
7
D
nC
A
6
D
5
18
D
(@TA = 25°C)
SO-8
Top View
Applications
l
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
l
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF8736PbF-1
IRF8736TRPbF-1
IRF8736PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
Units
V
VDS
30
± 20
18
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
14.4
144
2.5
A
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
1.6
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
50
Notes through ꢀ are on page 9
1
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IRF8736PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250μA
BVDSS
ΔΒ
V
Δ
VDSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
52
3.9
5.5
1.8
-6.1
–––
–––
–––
–––
–––
17
4.8
6.8
V
GS = 10V, ID = 18A
VGS = 4.5V, ID = 14.4A
VDS = VGS, ID = 50μA
mΩ
VGS(th)
Gate Threshold Voltage
2.35
V
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
1.0
150
100
-100
–––
26
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
VGS = -20V
gfs
Qg
S
VDS = 15V, ID = 14.4A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
4.4
1.9
5.8
4.9
7.7
7.1
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
nC VGS = 4.5V
ID = 14.4A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
See Fig. 16
Qsw
Qoss
Output Charge
nC VDS = 10V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.3
12
2.2
–––
–––
–––
–––
Ω
V
DD = 15V, VGS = 4.5V
ID = 14.4A
R = 1.8
15
td(off)
tf
Turn-Off Delay Time
Fall Time
13
ns
pF
Ω
G
7.5
See Fig. 14
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2315 –––
–––
–––
449
219
–––
–––
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
126
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
14.4
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
3.1
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
ISM
–––
–––
144
(Body Diode)
Diode Forward Voltage
p-n junction diode.
VSD
trr
–––
–––
–––
–––
16
1.0
24
29
V
T = 25°C, I = 14.4A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 14.4A, VDD = 10V
J F
Qrr
ton
di/dt = 300A/μs
19
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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November 22, 2013
IRF8736PbF-1
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
1
2.3V
0.01
0.001
2.3V
1
60μs PULSE WIDTH
≤
60μs PULSE WIDTH
Tj = 25°C
≤
Tj = 150°C
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
I
= 18A
D
V
= 10V
GS
1.5
1.0
0.5
T
= 150°C
J
1
0.1
T
= 25°C
J
V
= 15V
DS
≤ 60μs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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November 22, 2013
IRF8736PbF-1
10000
1000
100
5
4
3
2
1
0
V
C
= 0V,
f = 1 MHZ
GS
I = 14.4A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
= 24V
= 15V
C
= C
DS
DS
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
0
4
8
12
16
20
1
10
100
Q , Total Gate Charge (nC)
g
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100μsec
1msec
T
= 150°C
J
10msec
T
= 25°C
J
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
GS
= 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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November 22, 2013
IRF8736PbF-1
20
16
12
8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= 50μA
D
4
0
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T , Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
τι
(sec)
1.396574 0.000246
Ri (°C/W)
0.02
0.01
τJ
τa
τJ
τ1
7.206851 0.037927
τ
τ
3τ3
τ4
2 τ2
τ1
τ4
27.1278
14.26877
1.0882
30.3
Ci= τi/Ri
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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November 22, 2013
IRF8736PbF-1
600
500
400
300
200
100
0
15V
I
D
TOP
1.28A
1.75A
14.4A
DRIVER
+
L
V
BOTTOM
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
Ω
t
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
RD
I
AS
VDS
Fig 12b. Unclamped Inductive Waveforms
VGS
D.U.T.
RG
+VDD
-
Current Regulator
Same Type as D.U.T.
VGS
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
50KΩ
.2μF
12V
.3μF
Fig 14a. Switching Time Test Circuit
+
V
DS
V
DS
D.U.T.
-
90%
V
GS
3mA
10%
I
I
D
G
V
GS
Current Sampling Resistors
t
t
r
t
t
f
d(on)
d(off)
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
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November 22, 2013
IRF8736PbF-1
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16. Gate Charge Waveform
7
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November 22, 2013
IRF8736PbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHE S
MILL IME T ERS
DIM
A
D
B
MIN
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
.0532
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
e
.050 BAS IC
1.27 B AS IC
0.635 BAS IC
e 1 .025 BAS IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING&TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TOEXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TOEXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
A S UB S T R AT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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November 22, 2013
IRF8736PbF-1
SO-8 Tape and Reel ( Dimensions are shown in milimeters (inches)
)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.21mH, RG = 25Ω, IAS = 14.4A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
ꢀ Rθ is measured at TJ approximately 90°C
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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November 22, 2013
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