IRF9520NLPBF [INFINEON]
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN;型号: | IRF9520NLPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总11页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-91522A
IRF9520NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF9520S)
l Low-profile through-hole (IRF9520L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = -100V
RDS(on) = 0.48Ω
G
l P-Channel
l Fully Avalanche Rated
Description
ID = -6.8A
S
FifthGenerationHEXFETsfromInternationalRectifierutilize
advancedprocessingtechniquestoachieveextremelylow
on-resistancepersiliconarea. Thisbenefit,combinedwith
thefastswitchingspeedandruggedizeddevicedesignthat
HEXFETPowerMOSFETsarewellknownfor,providesthe
designerwithanextremely efficientandreliabledevicefor
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodatingdiesizesuptoHEX-4.Itprovidesthehighest
power capability and the lowest possible on-resistance in
anyexistingsurfacemountpackage.TheD2Pakissuitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typicalsurfacemountapplication.
2
TO-262
D
Pak
The through-hole version (IRF9520L) is available for low-
profileapplications.
Absolute Maximum Ratings
Parameter
Max.
-6.8
-4.8
-27
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10Vꢀ
Continuous Drain Current, VGS @ -10Vꢀ
Pulsed Drain Current ꢀ
A
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
W
Power Dissipation
48
Linear Derating Factor
0.32
± 20
140
-4.0
4.8
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
mJ
V/ns
-5.0
-55 to + 175
300 (1.6mm from case )
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
3.1
40
Units
RθJC
RθJA
°C/W
5/13/98
IRF9520NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-100 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, ID = -1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.48
Ω
V
S
VGS = 10V, ID = -4.0A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -4.0Aꢀ
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 ––– -4.0
1.4 ––– –––
Forward Transconductance
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 27
––– ––– 5.0
––– ––– 15
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -4.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = -80V
VGS = -10V, See Fig. 6 and 13 ꢀ
VDD = -50V
–––
–––
–––
–––
14 –––
47 –––
28 –––
31 –––
RiseTime
ID = -4.0A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 22Ω
RD = 12Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
nH
pF
–––
–––
7.5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 350 –––
––– 110 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
–––
70 –––
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
-6.8
-27
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– ––– -1.6
––– 100 150
___ 420 630
V
TJ = 25°C, IS = -4.0A, VGS = 0V
ns
TJ = 25°C, IF = -4.0A
Qrr
ton
Reverse Recovery
Charge
nC di/dt = -100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%
ꢀ Uses IRF9520N data and test conditions
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 18mH
RG = 25Ω, IAS = -4.0A. (See Figure 12)
ISD ≤ -4.0A, di/dt ≤ -300A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF9520NS/L
100
10
1
100
10
1
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM-4.5V
BOTTOM-4.5V
-4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 175 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
100
2.5
2.0
1.5
1.0
0.5
0.0
-6.7A
=
I
D
°
T = 175 C
J
10
°
T = 25 C
J
1
V
= 10V
DS
20µs PULSE WIDTH
V
= -10V
GS
0.1
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
IRF9520NS/L
20
16
12
8
800
I
D
= -4.0 A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C + C
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
oss
ds
600
400
200
0
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
1
10
100
1000
0.8
1.4
2.0
2.6
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
IRF9520NS/L
RD
VDS
8.0
6.0
4.0
2.0
0.0
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
CaseTemperature
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRF9520NS/L
400
300
200
100
0
L
V
DS
I
D
TOP
-1.7A
-2.8A
BOTTOM -4.0A
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRF9520NS/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRF9520NS/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
M AX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
M INIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLING DIM ENSION : INCH.
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEM BLY
YY
=
YEAR
= W EEK
LOT CODE
W W
IRF9520NS/L
Package Outline
TO-262Outline
Part Marking Information
TO-262
IRF9520NS/L
Tape & Reel Information
D2Pak
TRR
1.60 (.0 63)
1.50 (.0 59)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.0 73)
1 1.60 (.457)
1 1.40 (.449)
1.65 (.0 65)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
M IN .
30.40 (1.197)
M AX.
NO TES :
1. CO M FO RM S TO EIA-418.
2. CO N TR O LLING DIM ENSIO N : M ILLIM ETER.
3. DIM ENSIO N M EASU RED
26.40 (1.039)
24.40 (.961)
4
@ H UB.
3
4. INC LU DES FLAN G E D ISTO RTIO N
@
O U TER ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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