IRF9520NSTRRPBF [INFINEON]

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3;


型号：	IRF9520NSTRRPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 局域网开关脉冲晶体管
文件：	总10页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-91522A

IRF9520NS/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF9520S)

l Low-profile through-hole (IRF9520L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= -100V

R_DS(on)= 0.48Ω

l P-Channel

l Fully Avalanche Rated

Description

I_D= -6.8A

FifthGenerationHEXFETsfromInternationalRectifierutilize

advancedprocessingtechniquestoachieveextremelylow

on-resistancepersiliconarea. Thisbenefit,combinedwith

thefastswitchingspeedandruggedizeddevicedesignthat

HEXFETPowerMOSFETsarewellknownfor,providesthe

designerwithanextremely efficientandreliabledevicefor

use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodatingdiesizesuptoHEX-4.Itprovidesthehighest

power capability and the lowest possible on-resistance in

anyexistingsurfacemountpackage.TheD²Pakissuitable

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typicalsurfacemountapplication.

TO-262

Pak

The through-hole version (IRF9520L) is available for low-

profileapplications.

Absolute Maximum Ratings

Parameter

Max.

-6.8

-4.8

-27

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10Vꢀ

Pulsed Drain Current ꢀ

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

Linear Derating Factor

0.32

± 20

140

-4.0

4.8

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-5.0

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

3.1

Units

R_θJC

R_θJA

°C/W

5/13/98

IRF9520NS/L

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-100 ––– –––

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= -250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, I_D= -1mAꢀ

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance ––– ––– 0.48

Ω

V_GS= 10V, I_D= -4.0A

V_DS= V_GS, I_D= -250µA

V_DS= -50V, I_D= -4.0Aꢀ

V_DS= -100V, V_GS= 0V

V_DS= -80V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Gate Threshold Voltage

-2.0 ––– -4.0

1.4 ––– –––

Forward Transconductance

––– ––– -25

––– ––– -250

––– ––– 100

––– ––– -100

––– ––– 27

––– ––– 5.0

––– ––– 15

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= -4.0A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS= -80V

V_GS= -10V, See Fig. 6 and 13 ꢀ

V_DD= -50V

–––

14 –––

47 –––

28 –––

31 –––

RiseTime

I_D= -4.0A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 22Ω

R_D= 12Ω, See Fig. 10 ꢀ

Between lead,

L_S

Internal Source Inductance

–––

7.5

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 350 –––

––– 110 –––

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

–––

70 –––

ƒ = 1.0MHz, See Fig. 5ꢀ

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

I_S

MOSFET symbol

-6.8

-27

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

––– ––– -1.6

––– 100 150

___ 420 630

T_J= 25°C, I_S= -4.0A, V_GS= 0V

T_J= 25°C, I_F= -4.0A

Q_rr

t_on

Reverse Recovery

Charge

nC di/dt = -100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%

ꢀ Uses IRF9520N data and test conditions

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 18mH

R_G= 25Ω, I_AS= -4.0A. (See Figure 12)

I_SD≤ -4.0A, di/dt ≤ -300A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

IRF9520NS/L

100

VGS

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

VGS

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

TOP

BOTTOM-4.5V

-4.5V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 175 C

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics,

Fig 1. Typical Output Characteristics,

100

2.5

2.0

1.5

1.0

0.5

0.0

-6.7A

T = 175 C

T = 25 C

= 10V

20µs PULSE WIDTH

= -10V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160 180

-V , Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs.Temperature

IRF9520NS/L

800

= -4.0 A

= 0V,

f = 1MHz

C SHORTED

=-80V

=-50V

=-20V

= C + C

iss

gd ,

= C

rss

= C + C

oss

600

400

200

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

T = 175 C

100us

T = 25 C

1ms

10ms

T = 25 C

T = 175 C

Single Pulse

= 0 V

0.1

0.2

100

1000

0.8

1.4

2.0

2.6

-V , Drain-to-Source Voltage (V)

-V ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

ForwardVoltage

IRF9520NS/L

R_D

V_DS

8.0

6.0

4.0

2.0

0.0

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

100

125

150

175

, Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

CaseTemperature

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.1

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

IRF9520NS/L

400

300

200

100

TOP

-1.7A

-2.8A

BOTTOM -4.0A

D.U.T

DRIVER

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

175

Starting T , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRF9520NS/L

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF9520NS/L

D²Pak Package Outline

10.54 (.415)

10.29 (.405)

10.16 (.400)

REF.

- B -

1.32 (.052)

4.69 (.185)

4.20 (.165)

1.40 (.055)

- A -

M AX.

1.22 (.048)

6.47 (.255)

6.18 (.243)

1.78 (.070)

1.27 (.050)

15.49 (.610)

14.73 (.580)

2.79 (.110)

2.29 (.090)

2.61 (.103)

2.32 (.091)

5.28 (.208)

4.78 (.188)

8.89 (.350)

REF.

1.40 (.055)

1.14 (.045)

1.39 (.055)

1.14 (.045)

0.55 (.022)

0.46 (.018)

0.93 (.037)

0.69 (.027)

5.08 (.200)

0.25 (.010)

B A M

M INIMUM RECOM MENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

LEAD ASSIGNMENTS

1 - GATE

NO TES:

DIM ENSIONS AFTER SOLDER DIP.

17.78 (.700)

2 - DRAIN

3 - SOURCE

DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.

CONTROLLING DIM ENSION : INCH.

HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.

3.81 (.150)

2.54 (.100)

2.08 (.082)

Part Marking Information

D²Pak

INTERNATIONAL

RECTIFIER

LOGO

PART NUM BER

F530S

9246

DATE CODE

(YYW W )

ASSEM BLY

YEAR

= W EEK

LOT CODE

W W

IRF9520NS/L

Package Outline

TO-262Outline

Part Marking Information

TO-262

IRF9520NS/L

Tape & Reel Information

D²Pak

TRR

1.60 (.0 63)

1.50 (.0 59)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.0 73)

1 1.60 (.457)

1 1.40 (.449)

1.65 (.0 65)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

TRL

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

M AX.

60.00 (2.362)

M IN .

30.40 (1.197)

M AX.

NO TES :

1. CO M FO RM S TO EIA-418.

2. CO N TR O LLING DIM ENSIO N : M ILLIM ETER.

3. DIM ENSIO N M EASU RED

26.40 (1.039)

24.40 (.961)

@ H UB.

4. INC LU DES FLAN G E D ISTO RTIO N

O U TER ED G E.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

5/98

IRF9520NSTRRPBF [INFINEON]

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