IRF9Z10-013
更新时间：2024-09-18 13:29:17
品牌：INFINEON
描述：Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
概述
数据手册IRF9Z10-013 概述
Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
IRF9Z10-013 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IRF9Z10PBF | VISHAY | Power Field-Effect Transistor, 6.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | 获取价格 |
|
| IRF9Z10STRRPBF | INFINEON | Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 获取价格 |
|
| IRF9Z12 | SAMSUNG | Power Field-Effect Transistor, 4A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 获取价格 |
|
| IRF9Z12-010PBF | INFINEON | Power Field-Effect Transistor, 4A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRF9Z14 | INFINEON | Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) | 获取价格 |
|
| IRF9Z14 | VISHAY | Power MOSFET | 获取价格 |
|
| IRF9Z14-009 | INFINEON | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 获取价格 |
|
| IRF9Z14-018PBF | VISHAY | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 获取价格 |
|
| IRF9Z14-029 | VISHAY | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 获取价格 |
|
| IRF9Z14.24.34FPBF | VISHAY | Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 获取价格 |
|
IRF9Z10-013 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 5
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 8
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
