IRFB17N50L [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A); 功率MOSFET （ VDSS = 500V ， RDS（ON） （典型值） = 0.28ohm ，ID = 16A）
| 型号： | IRFB17N50L |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A) |
| 文件： | 总8页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94084A
IRFB17N50L
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l ZVS and High Frequency Circuit
l PWM Inverters
VDSS
500V
RDS(on) typ.
ID
16A
0.28Ω
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
TO-220AB
l High Performance Optimised Anti-parallel Diode
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
16
11
A
64
220
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
1.8
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
13
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
300
10
°C
Mounting Torque, 6-32 or M3 screw
lbft.in(N.m)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
(Body Diode)
16
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
64
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
––– ––– 1.5
––– 170 250
––– 220 330
––– 470 710
––– 810 1210
V
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 16A
ns
Reverse Recovery Time
Reverse Recovery Charge
di/dt = 100A/µs
Qrr
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
––– 7.3
11
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l
Bridge Converters
l All Zero Voltage Switching
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1
3/28/01
IRFB17N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
500 ––– –––
0.6 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.28 0.32
3.0 ––– 5.0
Ω
V
VGS = 10V, ID = 9.9A
VDS = VGS, ID = 250µA
––– ––– 50
––– ––– 2.0
––– ––– 100
––– ––– -100
µA
VDS = 500V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
mA VDS = 400V, VGS = 0V, TJ = 125°C
GS = 30V
VGS = -30V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
nA
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
11 ––– –––
S
VDS = 50V, ID = 9.9A
ID = 16A
Qg
––– ––– 130
––– ––– 33
––– ––– 59
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V
VDD = 250V
–––
–––
–––
–––
21 –––
51 –––
50 –––
28 –––
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 7.5Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 2760 –––
––– 325 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 3690 –––
––– 84 –––
––– 159 –––
37 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
–––
Max.
390
16
Units
mJ
IAR
A
EAR
Repetitive Avalanche Energy
22
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.56
–––
62
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Starting TJ = 25°C, L = 3.0mH, RG = 25Ω,
IAS = 16A.
ISD ≤ 16A, di/dt ≤ 347A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
2
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IRFB17N50L
100
10
100
10
1
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
5.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
16A
=
I
D
°
T = 150 C
J
2.5
2.0
1.5
1.0
0.5
0.0
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
5.0
V
6.0
7.0
8.0 9.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFB17N50L
20
16
12
8
100000
I
D
=
16A
V
= 0V,
f = 1 MHZ
, C SHORTED
gd ds
GS
V
V
V
= 400V
= 250V
= 100V
C
= C + C
DS
DS
DS
iss
gs
C
= C
gd
rss
C
= C + C
oss
ds gd
10000
1000
100
Ciss
Coss
Crss
4
10
0
0
30
60
90
120
150
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
10
100
1000
10000
0.6
0.9
1.3
1.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFB17N50L
RD
20
16
12
8
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB17N50L
800
640
480
320
160
0
I
D
TOP
7A
10A
BOTTOM 16A
1 5V
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12a. Maximum Avalanche Energy
V
(BR)DSS
Vs. Drain Current
t
p
I
AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Basic Gate Charge Waveform
Fig 13a. Gate Charge Test Circuit
6
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IRFB17N50L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFB17N50L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIG NM ENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOU RC E
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTES:
1
2
D IMENSIONING
&
TOLERANCING PER ANSI Y14.5M, 1982.
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD MEASUREMENTS DO NOT INCLU DE BURRS.
C ONTROLLING DIMENSION : INCH
&
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IR F1010
W ITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NU MBER
LOT C ODE 9B1M
IR F1010
9246
9B
1M
D ATE COD E
(YYW W )
ASSEMBLY
LOT
CO DE
YY
=
YEAR
= W EEK
W W
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/01
8
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