首页 |元器件品牌

IRFB3207Z [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .;
IRFB3207Z
型号： IRFB3207Z
厂家： Infineon    Infineon
描述：

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .
文件： 总13页 (文件大小：491K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IRFB3207ZPbF  
IRFS3207ZPbF  
IRFSL3207ZPbF  
HEXFET® Power MOSFET  
Applications  
ꢀ High Efficiency Synchronous Rectification in  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
75V  
SMPS  
3.3mΩ  
4.1mΩ  
170Aꢁ  
120A  
ꢀ Uninterruptible Power Supply  
ꢀ High Speed Power Switching  
ꢀ Hard Switched and High Frequency Circuits  
G
Benefits  
D
D
ꢀ Improved Gate, Avalanche and Dynamic  
D
dv/dt Ruggedness  
ꢀ Fully Characterized Capacitance and  
Avalanche SOA  
ꢀ Enhanced body diode dV/dt and dI/dt  
Capability  
ꢀ Lead-Free  
ꢀ RoHSCompliant,Halogen-Free  
S
S
S
D
D
G
G
G
D2Pak  
TO-262  
TO-220AB  
IRFB3207ZPbF  
IRFS3207ZPbF  
IRFSL3207ZPbF  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
IRFB3207ZPbF  
IRFSL3207ZPbF  
TO-220  
TO-262  
Tube  
50  
IRFB3207ZPbF  
Tube  
Tube  
50  
50  
IRFSL3207ZPbF  
IRFS3207ZPbF  
IRFS3207ZPbF  
D2Pak  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
IRFS3207ZTRLPbF  
IRFS3207ZTRRPbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
170  
ꢁ
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
120  
ꢁ
A
120  
670  
300  
Pulsed Drain Current  
ꢂ
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
2.0  
W/°C  
V
± 20  
VGS  
Gate-to-Source Voltage  
16  
Peak Diode Recovery  
ꢃ
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
ꢈ
ꢈ
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
EAS (Thermally limited)  
Single Pulse Avalanche Energy  
ꢄ
170  
See Fig. 14, 15, 22a, 22b  
mJ  
A
Avalanche Current  
ꢂ
IAR  
Repetitive Avalanche Energy  
ꢅ
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case ꢆ  
Typ.  
–––  
Max.  
0.50  
–––  
Units  
Rθ  
JC  
Rθ  
Case-to-Sink, Flat Greased Surface , TO-220  
0.50  
°C/W  
CS  
Rθ  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
–––  
62  
40  
ꢆ
JA  
Rθ  
ꢇꢆ  
JA  
1
www.irf.com © 2015 International Rectifier  
Submit Datasheet Feedback  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
Static @ TJ = 25°C (unless otherwise specified)  
Symbol  
V(BR)DSS  
Parameter  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
Min. Typ. Max. Units  
75 ––– –––  
––– 0.091 ––– V/°C Reference to 25°C, ID = 5mAꢂ  
Conditions  
VGS = 0V, ID = 250µA  
V
∆V(BR)DSS/∆TJ  
RDS(on)  
–––  
2.0  
–––  
3.3  
4.1  
4.0  
V
GS = 10V, ID = 75A ꢅ  
mΩ  
V
VGS(th)  
–––  
VDS = VGS, ID = 150µA  
RG(int)  
IDSS  
Internal Gate Resistance  
Drain-to-Source Leakage Current  
0.80 –––  
20  
Ω
––– –––  
µA VDS = 75V, VGS = 0V  
––– ––– 250  
––– ––– 100  
––– ––– -100  
V
V
V
DS = 75V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
nA  
GS = 20V  
GS = -20V  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Symbol  
gfs  
Qg  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
VDS = 50V, ID = 75A  
280 ––– –––  
S
––– 120 170  
nC ID = 75A  
VDS = 38V  
Qgs  
Gate-to-Source Charge  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
27  
33  
87  
20  
68  
55  
68  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
Qgd  
Gate-to-Drain ("Miller") Charge  
Total Gate Charge Sync. (Qg - Qgd)  
VGS = 10V ꢅ  
Qsync  
ID = 75A, VDS =0V, VGS = 10V  
td(on)  
Turn-On Delay Time  
ns VDD = 49V  
ID = 75A  
tr  
Rise Time  
td(off)  
Turn-Off Delay Time  
RG = 2.7Ω  
VGS = 10V ꢅ  
tf  
Fall Time  
Ciss  
Input Capacitance  
––– 6920 –––  
––– 600 –––  
––– 270 –––  
––– 770 –––  
––– 960 –––  
pF  
V
GS = 0V  
Coss  
Output Capacitance  
VDS = 50V  
Crss  
Reverse Transfer Capacitance  
Effective Output Capacitance (Energy Related)ꢊ  
Effective Output Capacitance (Time Related)ꢉ  
ƒ = 1.0MHz  
Coss eff. (ER)  
Coss eff. (TR)  
V
GS = 0V, VDS = 0V to 60V ꢇ  
GS = 0V, VDS = 0V to 60V ꢉ  
V
Diode Characteristics  
Symbol  
Parameter  
Continuous Source Current  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
D
S
IS  
––– –––  
A
170ꢁ  
(Body Diode)  
showing the  
integral reverse  
G
ISM  
Pulsed Source Current  
(Body Diode) ꢂꢊ  
Diode Forward Voltage  
Reverse Recovery Time  
––– ––– 670  
p-n junction diode.  
TJ = 25°C, IS = 75A, VGS = 0V ꢅ  
VSD  
trr  
––– –––  
1.3  
54  
V
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
VR = 64V,  
–––  
–––  
–––  
–––  
–––  
36  
41  
50  
67  
2.4  
ns  
IF = 75A  
62  
di/dt = 100A/µs ꢅ  
Qrr  
Reverse Recovery Charge  
75  
nC  
100  
–––  
IRRM  
ton  
Reverse Recovery Current  
Forward Turn-On Time  
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
ꢁCalculated continuous current based on maximum allowable junction  
temperature. Bond wire current limit is 120A. Note that current  
limitations arising from heating of the device leads may occur with  
ꢃISD ≤ 75A, di/dt ≤ 1730A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.  
ꢅPulse width ≤ 400µs; duty cycle ≤ 2%.  
ꢉCoss eff. (TR) is a fixed capacitance that gives the same charging time  
some lead mounting arrangements.  
ꢂRepetitive rating; pulse width limited by max. junction  
temperature.  
ꢄLimited by TJmax, starting TJ = 25°C, L = 0.033mH  
RG = 25Ω, IAS = 102A, VGS =10V. Part not recommended for use  
above this value.  
as Coss while VDS is rising from 0 to 80% VDSS  
ꢊCoss eff. (ER) is a fixed capacitance that gives the same energy as  
Coss while VDS is rising from 0 to 80% VDSS  
ꢇWhen mounted on 1" square PCB (FR-4 or G-10 Material). For recom  
mended footprint and soldering techniques refer to application note #AN-994.  
ꢆRθ is measured at TJ approximately 90°C.  
.
.
2
www.irf.com © 2015 International Rectifier  
Submit Datasheet Feedback  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
1000  
100  
10  
1000  
VGS  
15V  
10V  
8.0V  
6.0V  
5.5V  
5.0V  
4.8V  
4.5V  
VGS  
15V  
10V  
8.0V  
6.0V  
5.5V  
5.0V  
4.8V  
4.5V  
TOP  
TOP  
BOTTOM  
BOTTOM  
4.5V  
100  
4.5V  
60µs PULSE WIDTH  
Tj = 175°C  
60µs PULSE WIDTH  
≤
≤
Tj = 25°C  
10  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.5  
2.0  
1.5  
1.0  
0.5  
1000  
100  
10  
I
= 75A  
D
V
= 10V  
GS  
T
= 175°C  
J
T
= 25°C  
J
1
V
= 25V  
DS  
≤60µs PULSE WIDTH  
0.1  
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180  
, Junction Temperature (°C)  
T
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 4. Normalized On-Resistance vs. Temperature  
Fig 3. Typical Transfer Characteristics  
12.0  
100000  
10000  
1000  
V
= 0V,  
= C  
f = 1 MHZ  
GS  
I = 75A  
D
C
C
C
+ C , C  
SHORTED  
iss  
gs  
gd  
ds  
= C  
10.0  
rss  
oss  
gd  
V
V
V
= 60V  
= 38V  
= 15V  
DS  
DS  
DS  
= C + C  
ds  
gd  
8.0  
6.0  
4.0  
2.0  
0.0  
C
iss  
C
oss  
C
rss  
100  
0
20  
40  
60  
80  
100 120 140  
1
10  
, Drain-to-Source Voltage (V)  
100  
Q , Total Gate Charge (nC)  
V
G
DS  
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage  
www.irf.com © 2015 International Rectifier  
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage  
Submit Datasheet Feedback  
3
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
1000  
100  
10  
10000  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
T
= 175°C  
1000  
J
100µsec  
100  
T
= 25°C  
J
1msec  
10msec  
10  
DC  
1
1
Tc = 25°C  
Tj = 175°C  
Single Pulse  
V
= 0V  
GS  
0.1  
0.1  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
1
10  
, Drain-to-Source Voltage (V)  
100  
V
, Source-to-Drain Voltage (V)  
V
SD  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode Forward Voltage  
180  
100  
95  
90  
85  
80  
75  
70  
Id = 5mA  
Limited By Package  
160  
140  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
-60 -40 -20  
0
20 40 60 80 100120140160180  
, Temperature ( °C )  
T
, Case Temperature (°C)  
T
C
J
Fig 10. Drain-to-Source Breakdown Voltage  
Fig 9. Maximum Drain Current vs. Case Temperature  
2.5  
700  
I
D
600  
500  
400  
300  
200  
100  
0
TOP  
17A  
30A  
2.0  
1.5  
1.0  
0.5  
0.0  
BOTTOM 102A  
-10  
0
10 20 30 40 50 60 70 80  
Drain-to-Source Voltage (V)  
25  
50  
75  
100  
125  
150  
175  
Starting T , Junction Temperature (°C)  
J
V
DS,  
Fig 12. Maximum Avalanche Energy vs. DrainCurrent  
Submit Datasheet Feedback  
Fig 11. Typical COSS Stored Energy  
4
www.irf.com © 2015 International Rectifier  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
1
D = 0.50  
0.1  
0.20  
0.10  
0.05  
R1  
R1  
R2  
R2  
R3  
R3  
Ri (°C/W) τi (sec)  
0.1049 0.000099  
τ
JτJ  
τ
τ
Cτ  
τ
1τ1  
τ
2 τ2  
0.02  
0.01  
3τ3  
0.2469 0.001345  
0.1484 0.008469  
0.01  
Ci= τi/Ri  
τ /  
Notes:  
SINGLE PULSE  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
( THERMAL RESPONSE )  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
1000  
100  
10  
Duty Cycle =  
Single Pulse  
Allowed avalanche Current vs avalanche  
pulsewidth, tav, assuming Tj = 150°C and  
∆
0.01  
Tstart =25°C (Single Pulse)  
0.05  
0.10  
1
Allowed avalanche Current vs avalanche  
pulsewidth, tav, assuming  
Tstart = 150°C.  
j = 25°C and  
∆Τ  
0.1  
1.0E-06  
1.0E-05  
1.0E-04  
1.0E-03  
1.0E-02  
1.0E-01  
tav (sec)  
Fig 14. Typical Avalanche Current vs.Pulsewidth  
200  
180  
160  
140  
120  
100  
80  
Notes on Repetitive Avalanche Curves , Figures 14, 15:  
(For further info, see AN-1005 at www.irf.com)  
1. Avalanche failures assumption:  
Purely a thermal phenomenon and failure occurs at a temperature far in  
excess of Tjmax. This is validated for every part type.  
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.  
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.  
4. PD (ave) = Average power dissipation per single avalanche pulse.  
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase  
during avalanche).  
TOP  
BOTTOM 1.0% Duty Cycle  
= 102A  
Single Pulse  
I
D
6. Iav = Allowable avalanche current.  
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as  
25°C in Figure 14, 15).  
60  
tav = Average time in avalanche.  
D = Duty cycle in avalanche = tav ·f  
40  
20  
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)  
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC  
25  
50  
75  
100  
125  
150  
175  
Iav = 2∆T/ [1.3·BV·Zth]  
EAS (AR) = PD (ave)·tav  
Starting T , Junction Temperature (°C)  
J
Fig 15. Maximum Avalanche Energy vs. Temperature  
www.irf.com © 2015 International Rectifier  
5
Submit Datasheet Feedback  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
20  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I = 30A  
F
V
= 64V  
R
T = 25°C  
J
15  
10  
5
T = 125°C  
J
I
I
I
I
= 150µA  
= 250µA  
= 1.0mA  
= 1.0A  
D
D
D
D
0
0
200  
400  
600  
800  
1000  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
, Temperature ( °C )  
di /dt (A/µs)  
T
F
J
Fig. 17 - Typical Recovery Current vs. dif/dt  
Fig 16. Threshold Voltage vs. Temperature  
340  
260  
180  
100  
20  
20  
I = 45A  
I
= 30A  
V = 64V  
R
F
F
V
= 64V  
R
T = 25°C  
T = 25°C  
J
J
15  
10  
5
T = 125°C  
J
T = 125°C  
J
0
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
di /dt (A/µs)  
di /dt (A/µs)  
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt  
Fig. 19 - Typical Stored Charge vs. dif/dt  
340  
I
= 45A  
F
V
= 64V  
R
T = 25°C  
J
260  
180  
100  
20  
T = 125°C  
J
0
200  
400  
600  
800  
1000  
di /dt (A/µs)  
F
Fig. 20 - Typical Stored Charge vs. dif/dt  
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback  
6
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
Driver Gate Drive  
P.W.  
Period  
D =  
D.U.T  
Period  
P.W.  
+
*
=10V  
V
GS  
ꢄ
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
ꢂ
-
Reverse  
Recovery  
Current  
Body Diode Forward  
- ꢃ  
Current  
di/dt  
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
ꢁ
V
DD  
VDD  
Re-Applied  
Voltage  
• dv/dt controlled by RG  
RG  
+
-
Body Diode  
Forward Drop  
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
Inductor Current  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel  
HEXFET® Power MOSFETs  
V
(BR)DSS  
15V  
t
p
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
V
2
GS  
0.01Ω  
t
p
I
AS  
Fig 21b. Unclamped Inductive Waveforms  
Fig 21a. Unclamped Inductive Test Circuit  
LD  
VDS  
VDS  
90%  
+
-
VDD  
10%  
VGS  
D.U.T  
VGS  
Pulse Width < 1µs  
Duty Factor < 0.1%  
td(on)  
td(off)  
tr  
tf  
Fig 22a. Switching Time Test Circuit  
Fig 22b. Switching Time Waveforms  
Id  
Vds  
Vgs  
L
VCC  
DUT  
Vgs(th)  
0
1K  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Fig 23a. Gate Charge Test Circuit  
Fig 23b. Gate Charge Waveform  
Submit Datasheet Feedback  
7
www.irf.com © 2015 International Rectifier  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))  
TO-220AB Part Marking Information  
INTERNATIONAL  
RECTIFIER LOGO  
INTERNATIONAL  
RECTIFIER LOGO  
PART NUMBER  
PART NUMBER  
DATE CODE  
P = LEAD-FREE  
Y = LAST DIGIT OF YEAR  
WW = WORK WEEK  
? = ASSEMBLY SITE CODE  
FB3207Z  
FB3207Z  
DATE CODE  
OR  
ASSEMBLY  
LOT CODE  
ASSEMBLY  
LOT CODE  
Y = LAST DIGIT OF YEAR  
WW = WORK WEEK  
P = LEAD-FREE  
PYWW?  
YWWP  
LC  
LC  
LC  
LC  
TO-220AB packages are not recommended for Surface Mount Application.  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
8
www.irf.com © 2015 International Rectifier  
Submit Datasheet Feedback  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
D2Pak (TO-263AB) Package Outline  
Dimensions are shown in millimeters (inches)  
D2Pak (TO-263AB) Part Marking Information  
INTERNATIONAL  
RECTIFIER LOGO  
INTERNATIONAL  
RECTIFIER LOGO  
PART NUMBER  
PART NUMBER  
IRFS3207Z  
IRFS3207Z  
OR  
PYWW?  
YWWP  
ASSEMBLY  
ASSEMBLY  
LOT CODE  
DATE CODE  
DATE CODE  
LOT CODE  
LC  
LC  
LC  
LC  
Y = LAST DIGIT OF YEAR  
WW = WORK WEEK  
P = LEAD-FREE  
P = LEAD-FREE  
Y = LAST DIGIT OF YEAR  
WW = WORK WEEK  
? = ASSEMBLY SITE CODE  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
9
www.irf.com © 2015 International Rectifier  
Submit Datasheet Feedback  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
TO-262 Package Outline  
Dimensions are shown in millimeters (inches)  
TO-262 Part Marking Information  
PART NUMBER  
PART NUMBER  
INTERNATIONAL  
RECTIFIER LOGO  
INTERNATIONAL  
RECTIFIER LOGO  
FSL3207Z  
FSL3207Z  
OR  
PYWW?  
YWWP  
ASSEMBLY  
LOT CODE  
ASSEMBLY  
LOT CODE  
DATE CODE  
DATE CODE  
P = LEAD-FREE  
Y = LAST DIGIT OF YEAR  
WW = WORK WEEK  
Y = LAST DIGIT OF YEAR  
WW = WORK WEEK  
P = LEAD-FREE  
LC LC  
LC LC  
? = ASSEMBLY SITE CODE  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
10  
www.irf.com © 2015 International Rectifier  
Submit Datasheet Feedback  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
D2Pak (TO-263AB) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TRR  
1.60 (.063)  
1.50 (.059)  
1.60 (.063)  
1.50 (.059)  
4.10 (.161)  
3.90 (.153)  
0.368 (.0145)  
0.342 (.0135)  
FEED DIRECTION  
1.85 (.073)  
11.60 (.457)  
11.40 (.449)  
1.65 (.065)  
24.30 (.957)  
23.90 (.941)  
15.42 (.609)  
15.22 (.601)  
TRL  
1.75 (.069)  
1.25 (.049)  
10.90 (.429)  
10.70 (.421)  
4.72 (.136)  
4.52 (.178)  
16.10 (.634)  
15.90 (.626)  
FEED DIRECTION  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
MIN.  
30.40 (1.197)  
MAX.  
NOTES :  
1. COMFORMS TO EIA-418.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
26.40 (1.039)  
24.40 (.961)  
4
3
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
11  
www.irf.com © 2015 International Rectifier  
Submit Datasheet Feedback  
August 18, 2015  
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF  
Qualification information†  
Industrial  
Qualification level  
(per JEDEC JESD47F†† guidelines)  
TO-220  
N/A  
Moisture Sensitivity Level  
RoHS compliant  
D2Pak  
TO-262  
MSL1  
Yes  
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/  
†† Applicable version of JEDEC standard at the time of product release.  
Revision History  
Date  
Comment  
· Updated data sheet with new IR corporate template.  
• Updated package outline & part marking on page 8, 9 & 10.  
· Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.  
4/24/2014  
8/18/2015  
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.  
• Ordering Table - Base Part Number - IRFS3207ZPbF - Corrected Orderable Part Numbers  
for Tape & Reel Left and Right to IRFS3207ZTRLPbF and IRFS3207ZTRRPbF resp - page 1  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
12  
www.irf.com © 2015 International Rectifier  
Submit Datasheet Feedback  
August 18, 2015  
IMPORTANT NOTICE  
The information given in this document shall in no For further information on the product, technology,  
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please  
characteristics (“Beschaffenheitsgarantie”) .  
contact your nearest Infineon Technologies office  
(www.infineon.com).  
With respect to any examples, hints or any typical  
values stated herein and/or any information  
regarding the application of the product, Infineon  
Technologies hereby disclaims any and all  
warranties and liabilities of any kind, including  
without limitation warranties of non-infringement  
of intellectual property rights of any third party.  
WARNINGS  
Due to technical requirements products may  
contain dangerous substances. For information on  
the types in question please contact your nearest  
Infineon Technologies office.  
In addition, any information given in this document  
is subject to customer’s compliance with its  
obligations stated in this document and any  
applicable legal requirements, norms and  
standards concerning customer’s products and any  
use of the product of Infineon Technologies in  
customer’s applications.  
Except as otherwise explicitly approved by Infineon  
Technologies in a written document signed by  
authorized  
representatives  
of  
Infineon  
Technologies, Infineon Technologies’ products may  
not be used in any applications where a failure of  
the product or any consequences of the use thereof  
can reasonably be expected to result in personal  
injury.  
The data contained in this document is exclusively  
intended for technically trained staff. It is the  
responsibility of customer’s technical departments  
to evaluate the suitability of the product for the  
intended application and the completeness of the  
product information given in this document with  
respect to such application.  

相关型号：

SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

 Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明