IRFB4229 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFB4229 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总9页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97078A
IRFB4229PbF
Features
l
Advanced Process Technology
Key Parameters
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
VDS min
250
300
38
V
V
m
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
l
91
A
l
l
175
°C
D
D
l
Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l
l
Repetitive Avalanche Capability for Robustness
and Reliability
Class-D Audio Amplifier 300W-500W
(Half-bridge)
G
S
D
G
S
TO-220AB
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGS
±30
Gate-to-Source Voltage
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
46
A
33
180
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
91
Repetitive Peak Current
330
Power Dissipation
W
190
Power Dissipation
2.2
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
Max.
0.45
–––
62
Units
Junction-to-Case
Rθ
Rθ
Rθ
–––
0.50
–––
JC
CS
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Notes through ꢀare on page 8
www.irf.com
1
09/10/07
IRFB4229PbF
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250
–––
–––
3.0
–––
210
38
–––
V
Reference to 25°C, I = 1mA
V
/ T
∆
J
∆Β
––– mV/°C
D
DSS
VGS = 10V, ID = 26A
RDS(on)
VGS(th)
46
mΩ
V
VDS = VGS, ID = 250µA
–––
-14
–––
–––
–––
–––
–––
72
5.0
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
83
––– mV/°C
VDS = 250V, VGS = 0V
20
1.0
µA
mA
nA
V
V
V
V
DS = 250V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
110
–––
–––
–––
–––
–––
–––
GS = -20V
DS = 25V, ID = 26A
gfs
Qg
Qgd
td(on)
tr
S
VDD = 125V, ID = 26A, VGS = 10V
–––
–––
–––
–––
–––
–––
100
nC
Gate-to-Drain Charge
Turn-On Delay Time
26
VDD = 125V, VGS = 10V
ID = 26A
18
Rise Time
31
ns
td(off)
tf
RG = 2.4Ω
See Fig. 22
Turn-Off Delay Time
30
Fall Time
21
tst
VDD = 200V, VGS = 15V, RG= 4.7Ω
Shoot Through Blocking Time
–––
ns
µJ
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 4.7Ω, TJ = 100°C
VGS = 0V
–––
790
–––
EPULSE
Energy per Pulse
––– 1390 –––
––– 4560 –––
Ciss
Coss
Crss
Input Capacitance
VDS = 25V
Output Capacitance
–––
–––
–––
–––
390
100
290
4.5
–––
–––
–––
–––
pF
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 200V
Coss eff.
LD
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
300
–––
Max.
130
33
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
EAR
VDS(Avalanche)
IAS
–––
26
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
ISM
MOSFET symbol
Continuous Source Current
–––
–––
46
showing the
(Body Diode)
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
180
TJ = 25°C, IS = 26A, VGS = 0V
TJ = 25°C, IF = 26A, VDD = 50V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
190
1.3
V
290
ns
nC
Qrr
840 1260
2
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IRFB4229PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
BOTTOM
5.5V
5.5V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 26A
D
V
= 10V
GS
100
10
T
= 175°C
J
1
T
= 25°C
J
0.1
0.01
V
= 25V
DS
60µs PULSE WIDTH
≤
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1600
1400
L = 220nH
C = Variable
L = 220nH
C = 0.3µF
100°C
1200
100°C
25°C
25°C
1200
800
400
0
1000
800
600
400
200
0
150
160
170
180
190
200
100
110
120
130
140
150
160
170
V
Drain-to -Source Voltage (V)
I
Peak Drain Current (A)
DS,
D,
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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3
IRFB4229PbF
2000
1000
100
10
L = 220nH
C= 0.3µF
1600
C= 0.2µF
C= 0.1µF
T
= 175°C
J
1200
800
400
0
1
T
= 25°C
0.8
J
V
= 0V
GS
0.1
25
50
75
100
125
150
0.2
0.4
0.6
1.0
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
20
7000
6000
5000
4000
3000
2000
1000
0
V
C
= 0V,
f = 1 MHZ
I = 26A
D
GS
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
C
= C
rss
oss
gd
16
12
8
= C + C
ds
gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
120
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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IRFB4229PbF
600
500
400
300
200
100
0
0.40
0.30
0.20
0.10
0.00
I
I
= 26A
D
D
TOP
7.4A
13A
26A
BOTTOM
T
= 125°C
= 25°C
J
T
J
5
6
7
8
9
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
140
ton= 1µs
Duty cycle = 0.25
4.5
4.0
120
Half Sine Wave
Square Pulse
100
I
= 250µA
D
3.5
3.0
2.5
2.0
1.5
80
60
40
20
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
Case Temperature (°C)
T
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
τι
Ri (°C/W)
(sec)
τ
J τJ
τ
τ
Cτ
0.080717 0.000052
0.209555 0.001021
0.159883 0.007276
τ
1 τ1
τ
2 τ2
3τ3
0.02
0.01
Ci= τi/Ri
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB4229PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFB4229PbF
A
PULSE A
PULSE B
RG
C
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
V
GS
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
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7
IRFB4229PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 26A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ Half sine wave with duty cycle = 0.25, ton=1µsec.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2007
8
www.irf.com
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
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Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
INFINEON
IRFB4310Z
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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