IRFB7440 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFB7440 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总11页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET
IRFB7440PbF
Applications
HEXFET® Power MOSFET
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
D
S
VDSS
40V
RDS(on) typ.
max.
2.0m
2.5m
Ω
Ω
G
ID
172A
ID
120A
(Package Limited)
D
S
D
Benefits
G
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
TO-220AB
IRFB7440PbF
G
Gate
D
Drain
S
Source
l RoHS Compliant, Halogen-Free*
Base Part Number
Package Type
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
IRFB7440PbF
TO-220
IRFB7440PbF
7.0
6.0
5.0
4.0
3.0
2.0
1.0
200
150
100
50
I
= 100A
D
Limited By Package
T
= 125°C
J
T
= 25°C
J
0
4
6
8
10 12 14
16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
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1
IRFB7440PbF
Absolute Maximum Ratings
Symbol
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
Units
172
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
122
120
772
143
0.95
± 20
A
Maximum Power Dissipation
PD @TC = 25°C
W
Linear Derating Factor
W/°C
V
Gate-to-Source Voltage
VGS
TJ
Operating Junction and
-55 to + 175
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10lbf in (1.1N m)
Avalanche Characteristics
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
EAS (Thermally limited)
161
387
mJ
EAS (Thermally limited)
IAR
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
Units
Junction-to-Case
1.05
RθJC
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
°C/W
0.50
–––
–––
62
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min.
Typ.
Max.
Units
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5.0mA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
V
V / T
(BR)DSS Δ
––– 0.035 –––
Δ
J
m
m
RDS(on)
–––
–––
2.2
2.0
3.0
2.5
–––
3.9
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 100μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
Ω
Ω
VGS(th)
IDSS
Gate Threshold Voltage
3.0
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.6
1.0
μA
nA
Ω
150
100
-100
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
VGS = -20V
RG
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
someleadmountingarrangements.(RefertoAN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.032mH
RG = 50Ω, IAS = 100A, VGS =10V.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
Rθ is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 28A,
VGS =10V.
ISD ≤ 100A, di/dt ≤ 1330A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
*
Halogen -Free since April 30, 2014
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2
IRFB7440PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min.
88
Typ.
–––
90
Max.
–––
135
–––
–––
–––
–––
–––
–––
–––
Units
S
Conditions
gfs
Qg
VDS = 10V, ID = 100A
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 100A
VDS =20V
VGS = 10V
Qgs
Qgd
Qsync
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
23
32
58
24
ns
VDD = 20V
ID = 30A
Rise Time
68
td(off)
tf
Turn-Off Delay Time
115
68
R = 2.7
Ω
G
VGS = 10V
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 4730 –––
pF
VGS = 0V
Output Capacitance
–––
–––
–––
–––
680
460
845
980
–––
–––
–––
–––
VDS = 25V
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0 MHz
Coss eff. (ER)
oss eff. (TR)
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
C
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
172
IS
Continuous Source Current
–––
–––
A
MOSFET symbol
D
S
(Body Diode)
showing the
G
ISM
Pulsed Source Current
–––
–––
772
A
V
integral reverse
(Body Diode)
p-n junction diode.
VSD
dv/dt
trr
Diode Forward Voltage
Peak Diode Recovery
–––
–––
–––
–––
–––
–––
–––
0.9
6.8
24
1.3
–––
–––
–––
–––
–––
–––
TJ = 25°C, IS = 100A, VGS = 0V
V/ns TJ = 175°C, IS = 100A, VDS = 40V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ns
nC
A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
28
IF = 100A
di/dt = 100A/μs
Qrr
17
20
IRRM
1.3
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3
IRFB7440PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 175°C
≤
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
≤
60μs PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 100A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
V
= 32V
= 20V
DS
ds
gd
V
10.0
8.0
6.0
4.0
2.0
0.0
DS
C
C
iss
oss
rss
C
100
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
V
Q , Total Gate Charge (nC)
DS
G
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFB7440PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
1msec
Limited by package
T
= 25°C
J
1
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
0.8
50
49
48
47
46
45
44
43
42
41
40
Id = 5.0mA
V
= 0V to 32V
DS
0.6
0.4
0.2
0.0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
-60 -40 -20 0 20 40 60 80 100120140160180
, Temperature ( °C )
T
J
V
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical COSS Stored Energy
40
V
V
V
V
V
= 5.5V
GS
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
30
20
10
0
0
100 200 300 400 500 600 700 800
I , Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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February 19, 2015
5
IRFB7440PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
200
150
100
50
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
0
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRFB7440PbF
5.0
4.0
3.0
2.0
1.0
8
7
6
5
4
3
2
1
I = 60A
F
V
= 34V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 100μA
= 1.0mA
= 1.0A
D
D
D
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
di /dt (A/μs)
F
J
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
8
110
I = 100A
F
I = 60A
F
7
100
V
= 34V
V
= 34V
R
R
T = 25°C
T = 25°C
J
J
6
5
4
3
2
1
90
80
70
60
50
40
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
100
I = 100A
F
V
= 34V
R
80
60
40
20
0
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 21 - Typical Stored Charge vs. dif/dt
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February 19, 2015
7
IRFB7440PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2V0GVS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
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Fig 24b. Gate Charge Waveform
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IRFB7440PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRFB7440PbF
Qualification information†
Qualification level
Industrial
(per JEDEC JESD47F†† guidelines)
Moisture Sensitivity Level
RoHS compliant
TO-220
Not applicable
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
Updated data sheet with new IR corporate template.
Updated package outline and part marking on page 9.
Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
Updated EAS (L =1mH) = 387mJ on page 2
4/22/2014
•
•
•
2/19/2015
Ω
Updated note 9 “Limited by TJmax, starting T = 25°C, L = 1mH, RG = 50 , IAS = 28A, VGS =10V”. on page 2
J
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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