IRFB7446_技术文档

StrongIRFET™

IRFB7446PbF

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

R_DS(on)typ.

max

40V

D

2.6m

3.3m

G

I_{D (Silicon Limited)}

I_{D (Package Limited)}

123A

S

120A

Benefits

S

D

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free*

G

TO-220AB

IRFB7446PbF

 RoHS Compliant, Halogen-Free*

G

D

S

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRFB7446PbF

TO-220

Tube

50

IRFB7446PbF

8

6

4

2

0

125

100

75

50

25

0

I

= 70A

D

T

= 125°C

J

= 25°C

2

4

6

8

10 12 14 16 18 20

25

50

75

100

125

150

175

V

Gate -to -Source Voltage (V)

T

, Case Temperature (°C)

GS,

C

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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IRFB7446PbF

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

123

87

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

A

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current 

120

492

99

P_D@T_C= 25°C

Maximum Power Dissipation

W

W/°C

V

Linear Derating Factor

0.66

± 20

V_GS

Gate-to-Source Voltage

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

E_AS

111

236

Single Pulse Avalanche Energy 

mJ

E_{AS (L=1mH)}

Single Pulse Avalanche Energy 

Avalanche Current 

Repetitive Avalanche Energy 

I_AR

E_AR

A

mJ

See Fig 15, 16, 23a, 23b

Thermal Resistance

Symbol

Parameter

Typ.

–––

0.50

–––

Max.

1.52

–––

62

Units

Junction-to-Case 

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

°C/W

Junction-to-Ambient 

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Min. Typ. Max. Units

40 ––– –––

––– 0.033 –––

Conditions

V_GS= 0V, I_D= 250µA

V

V/°C Reference to 25°C, I_D= 5mA 

V_(BR)DSS/T_J

–––

2.2

2.6

3.9

3.0

3.3

–––

3.9

1.0

V

_GS= 10V, I_D= 70A 

_GS= 6.0V, I_D= 35A 

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

m

V

V_GS(th)

V_DS= V_GS, I_D= 100µA

––– –––

V

_DS=40 V, V_GS= 0V

_DS=40V,V_GS= 0V,T_J=125°C

_GS= 20V

I_DSS

Drain-to-Source Leakage Current

µA

––– ––– 150

––– ––– 100

––– ––– -100

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Resistance

I_GSS

R_G

nA

_GS= -20V

–––

1.6

–––



Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.046mH,R_G= 50, I_AS= 70A, V_GS=10V.

 I_SD 70A, di/dt  1174A/µs, V_DD V_(BR)DSS, T_J 175°C.

 Pulse width  400µs; duty cycle  2%.

 C_osseff. (TR) is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_DSS

.

C_osseff. (ER) is a fixed capacitance that gives the same energy as C_osswhile VDS is rising from 0 to 80% V_DSS

.

 R_is measured at T_Japproximately 90°C.

 This value determined from sample failure population, starting T_J= 25°C, L= 1mH, R_G= 50, I_AS= 22A, V_GS=10V.

Halogen -Free since April 30, 2014

*

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IRFB7446PbF

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

gfs

Parameter

Forward Transconductance

Total Gate Charge

Min.

269

–––

Typ. Max. Units

Conditions

–––

62

16

20

42

11

34

–––

93

S

V_DS= 10V, I_D=70A

Q_g

I_D= 70A

Q_gs

Gate-to-Source Charge

Gate-to-Drain Charge

Total Gate Charge Sync. (Qg– Qgd)

Turn-On Delay Time

–––

V_DS= 20V

V_GS= 10V

nC

Q_gd

Q_sync

t_d(on)

t_r

V_DD= 20V

I_D= 30A

Rise Time

ns

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

–––

33

23

–––

R_G= 2.7

V

_GS= 10V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

3183

475

331

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz, See Fig.5

pF

Effective Output Capacitance

(Energy Related)

C_{oss eff.(ER)}

C_{oss eff.(TR)}

–––

596

688

–––

V_GS= 0V, VDS = 0V to 32V

V_GS= 0V, VDS = 0V to 32V

Output Capacitance (Time Related)

Diode Characteristics

Symbol

Parameter

Min.

Typ. Max. Units

Conditions

MOSFET symbol

D

Continuous Source Current

(Body Diode)

I_S

–––

––– 120

showing the

A

G

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

I_SM

–––

0.9

492

1.3

S

V_SD

Diode Forward Voltage

V

T_J= 25°C,I_S= 70A,V_GS= 0V 

dv/dt

Peak Diode Recovery dv/dt

–––

7.6

22

24

15

1.0

––– V/ns T_J= 175°C,I_S= 70A,V_DS= 40V

–––

T_J= 25°C

V_DD= 34V

I_F= 70A,

t_rr

Reverse Recovery Time

ns

T_J= 125°C

T_J= 25°C di/dt = 100A/µs 

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

nC

A

T_J= 125°C

T_J= 25°C



I_RRM

3

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IRFB7446PbF

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

1

60µs

Tj = 25°C

PULSE WIDTH



60µs

Tj = 175°C

PULSE WIDTH



0.1

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 4. Typical Output Characteristics

Fig 3. Typical Output Characteristics

1000

100

10

2.2

1.8

1.4

1.0

0.6

I

= 70A

D

V

= 10V

GS

T

= 175°C

J

T

= 25°C

J

1

V

= 10V

DS



60µs PULSE WIDTH

0.1

2

4

6

8

10

-60

-20

T

20

60

100

140

180

, Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

J

GS

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

14.0

100000

V

= 0V,

= C

f = 1 MHZ

GS

I = 70A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

12.0

= C

rss

oss

gd

V

= 32V

= 20V

DS

= C + C

ds

gd

10.0

8.0

6.0

4.0

2.0

0.0

10000

1000

100

C

iss

C

oss

C

rss

0

10

20

30

40

50

60

70 80

0.1

1

10

100

Q , Total Gate Charge (nC)

V

, Drain-to-Source Voltage (V)

G

DS

Fig 8. Typical Gate Charge vs.

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Gate-to-Source Voltage

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IRFB7446PbF

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

T

= 175°C

J

100µsec

1msec

DC

T

= 25°C

J

Package Limited

10msec

1

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

0.1

1

10

100

0.0

0.5

1.0

1.5

2.0

V

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

SD

DS

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode Forward Voltage

0.6

50

Id = 5.0mA

V

= 0V to 32V

DS

49

0.5

0.4

0.3

0.2

0.1

0.0

48

47

46

45

44

43

42

41

40

0

5

10 15 20 25 30 35 40 45

-60

-20

20

60

100

140

180

T

, Temperature ( °C )

J

V

Drain-to-Source Voltage (V)

DS,

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_ossStored Energy

20.0

VGS = 5.5V

VGS = 6.0V

VGS = 7.0V

VGS = 8.0V

VGS = 10V

15.0

10.0

5.0

0.0

0

100

200

300

400

500

I , Drain Current (A)

D

Fig 13. Typical On-Resistance vs. Drain Current

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IRFB7446PbF

10

1

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche



pulsewidth, tav, assuming Tj = 150°C and

Tstart = 25°C (Single Pulse)

1

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Avalanche Current vs. Pulse Width

120

80

40

0

TOP

Single Pulse

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

BOTTOM 1.0% Duty Cycle

= 70A

I

D

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 14, 15).

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

25

50

75

100

125

150

175

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 14)

Starting T , Junction Temperature (°C)

J

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

I

_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

t

Fig 16. Maximum Avalanche Energy vs. Temperature

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IRFB7446PbF

4.5

3.5

2.5

1.5

0.5

6

5

4

3

2

1

0

I

= 46A

= 34V

F

V

R

T = 25°C

J

T = 125°C

J

ID = 100µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

-75

-25

T

25

75

125

175

225

0

200

400

600

800

1000

, Temperature ( °C )

di /dt (A/µs)

J

F

Fig 17. Threshold Voltage vs. Temperature

Fig 18. Typical Recovery Current vs. dif/dt

5

70

I = 70A

F

I = 46A

F

60

50

40

30

20

10

0

V

= 34V

V

= 34V

R

4

3

2

1

0

T = 25°C

J

T = 125°C

J

T = 25°C

J

T = 125°C

J

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/µs)

F

Fig 19. Typical Recovery Current vs. dif/dt

Fig 20. Typical Stored Charge vs. dif/dt

60

I = 70A

F

V

= 34V

R

50

40

30

20

10

0

T = 25°C

J

T = 125°C

J

0

200

400

600

800

1000

di /dt (A/µs)

F

Fig 21. Typical Stored Charge vs. dif/dt

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IRFB7446PbF

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

V

(BR)DSS

t

p

15V

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

20V

I

0.01



t

p

AS

Fig 23a. Unclamped Inductive Test Circuit

Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit

Fig 24b. Switching Time Waveforms

Id

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 25b. Gate Charge Waveform

Fig 25a. Gate Charge Test Circuit

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IRFB7446PbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

E X A M P L E :

T H IS IS A N IR F 1 0 1 0

L O C O D E 1 7 8 9

A S S E M B L E D

IN T H A S S E M B L Y L IN

P A R T N U M B E R

D A T E C O D E

T

IN T E R N A T IO

R E C T IF IE R

L O

N A L

O

N

W

1 9 , 2 0 0 0

"C "

G

O

E

Y E A R

E E K 1 9

L IN

0

=

2 0 0 0

N

o t e : "P " in a s s e m b ly lin e p o s it io n

in d ic a t e s "L e a d F r e e "

A S S E M B L Y

L O C O D E

W

-

T

E

C

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB7446PbF

Qualification Information^†

Qualification Level

Industrial

(per JEDEC JESD47F) ^††

TO-220

N/A

Yes

Moisture Sensitivity Level

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comment

9/11/2012

 Added Package limit and updated Fig2 & Fig10 on page 1, 2 & page 5.

Updated data sheet with new IR corporate template.

Updated package outline and part marking on page 9.

Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

4/22/2014

11/7/2014

Updated E_{AS (L =1mH)}= 236mJ on page 2

Updated note 9 “Limited by T_Jmax, starting T_J= 25°C, L = 1mH, R_G= 50, I_AS= 22A, V_GS=10V”. on page 2

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

of

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.


型号：	IRFB7446
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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中文：	中文翻译
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IRFB7446 [INFINEON]

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